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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies AIGW50N65F5XKSA1

Name: AIGW50N65F5XKSA1
Brand: Infineon Technologies
SKU: AIGW50N65F5XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AIGW50N65F5XKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: AIGW50N65F5XKSA1.pdf

Description:: IGBT 650V TO247-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

AIGW50N65F5XKSA1 from Infineon is a 650 V, 50 A high-speed TRENCHSTOP™ 5 IGBT optimized for hard-switching and resonant topologies in on-board chargers, off-board chargers, and DC/DC converters. It features 1.66 V V_CE(sat) at 25°C, 108 nC total gate charge, and 175°C maximum junction temperature in PG-TO247-3 package with isolated collector backside.

For engineers reviewing the AIGW50N65F5XKSA1 datasheet, AIGW50N65F5XKSA1 pinout, AIGW50N65F5XKSA1 application, or AIGW50N65F5XKSA1 equivalent, key selection criteria include switching energy (E_on/E_off = 0.49/0.14 mJ @ 25°C), thermal resistance (R_th(j-C) = 0.55 K/W), and AEC-Q101 qualification for automotive power electronics.

Technical Context

This IGBT employs TRENCHSTOP™ 5 trench-gate field-stop technology to achieve low conduction loss and fast switching simultaneously. Its dynamic performance is characterized by 21 ns turn-on delay and 156 ns turn-off delay under standard test conditions (V_CC = 400 V, I_C = 25 A, R_G = 12 Ω).

The device integrates a monolithic anti-parallel diode with low reverse recovery charge and soft recovery behavior, enabling efficient operation in PFC and bidirectional DC/DC stages. Gate threshold voltage (V_GE(th) = 3.2–4.8 V) and positive temperature coefficient of V_CE(sat) support stable paralleling and overcurrent protection.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	650 V - Withstands DC bus voltages up to 650 V in EV charger and industrial PFC designs.
I_C	50 A continuous - Rated collector current at T_C = 25°C; derates to 53.5 A at T_C = 100°C per thermal limits.
V_CE(sat)	1.66 V @ I_C = 50 A, T_vj = 25°C - Low saturation voltage reduces conduction losses in high-current switching nodes.
Q_G	108 nC - Enables fast, low-loss gate driving with moderate gate driver output capability (e.g., 2–4 A peak).
E_off	0.14 mJ @ 25°C - Low turn-off energy minimizes switching loss in high-frequency (>20 kHz) resonant converters.
R_th(j-C)	0.55 K/W - Enables high-power dissipation (270 W at T_C = 25°C) with manageable case-to-heatsink thermal interface.
T_vj(max)	175°C - Supports extended operation in thermally constrained automotive environments with robust SOA margin.

Pinout & Package

Package: PG-TO247-3 (isolated collector backside). Pin 1 = Gate, Pin 2 = Collector (electrically connected to backside metal tab), Pin 3 = Emitter.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control terminal for MOS-controlled IGBT conduction; requires low-inductance gate loop to minimize oscillation during fast switching.
Pin 2 & Backside	Collector	Main high-side power terminal; electrically tied to metal tab for direct heatsink mounting and low-inductance current path.
Pin 3	Emitter	Power return path and reference for gate drive; must be routed with minimal inductance to avoid Miller-induced false turn-on.

Key Features

Feature	Design Value
High-speed F5 technology	Reduces total switching energy (E_ts = 0.63 mJ) by >30% vs. prior-generation TRENCHSTOP™ 4 in identical test conditions.
AEC-Q101 qualified	Validated for automotive-grade reliability including temperature cycling, HTRB, and UIS stress testing per JEDEC standards.
Green RoHS-compliant package	Halogen-free, lead-free PG-TO247-3 housing meeting EU Directive 2011/65/EU and IPC/JEDEC J-STD-020 moisture sensitivity level MSL 1.
Dynamically stress tested	100% production-tested for short-circuit ruggedness (t_sc = 1 µs at V_CE = 650 V, T_vj = 175°C) and avalanche energy rating.

Applications

On-Board EV Charger

Off-Board DC Fast Charger

Use Scenario: High-efficiency AC/DC conversion stage in 11–22 kW bi-directional OBC modules operating at 20–100 kHz.

IC Role / Device Role / Timing Role: Main switching device in interleaved totem-pole PFC and dual-active-bridge DC/DC stages.

Use Value: Low Q_G and fast t_f (6 ns) enable high-frequency operation while maintaining <1.7 V V_CE(sat) across full temperature range.

Use Scenario: Primary-side switching in modular 15–30 kW DC/DC units feeding 400–800 V battery stacks.

IC Role / Device Role / Timing Role: Hard-switched IGBT in phase-shifted full-bridge topology with active clamp snubber.

Use Value: 175°C T_vj(max) and 0.55 K/W R_th(j-C) allow sustained 50 A operation without forced air cooling in compact enclosures.

Industrial PFC Converter

Renewable Energy Inverter

Use Scenario: Three-phase 30–50 kW active front-end rectifier for UPS and motor drives with unity power factor.

IC Role / Device Role / Timing Role: Boost switch in three-level NPC or T-type PFC topologies requiring low E_off and soft diode recovery.

Use Value: Integrated diode exhibits low Q_rr and soft recovery, reducing voltage overshoot and EMI in high-dV/dt applications.

Use Scenario: DC-link switching in 25–40 kW solar string inverters and energy storage systems with 600 V DC input.

IC Role / Device Role / Timing Role: Inverter leg switch in two-level or three-level NPC configurations with unidirectional current flow.

Use Value: AEC-Q101 qualification ensures long-term reliability under cyclic thermal stress in outdoor photovoltaic installations.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGW50H65DFB	650 V / 50 A, V_CE(sat) = 1.75 V @ 25°C, Q_G = 125 nC, no AEC-Q101 qualification	Higher conduction loss and gate drive demand; suited for industrial-only use cases without automotive validation needs	Select when cost sensitivity outweighs automotive compliance and thermal margin requirements
IXYS IXGN50N60B3	600 V / 50 A, V_CE(sat) = 1.8 V @ 25°C, E_off = 0.21 mJ, TO-247-3 package with non-isolated collector	Limited to ≤600 V DC bus; higher switching loss and no backside isolation restricts heatsink integration flexibility	Choose only for legacy 600 V systems where voltage headroom is sufficient and thermal design allows non-isolated mounting

Compared with STGW50H65DFB and IXGN50N60B3, AIGW50N65F5XKSA1 delivers lower conduction loss, superior switching efficiency, and automotive-grade reliability in a thermally optimized isolated-package form factor-making it the preferred choice for next-generation EV power electronics.

Availability

AIGW50N65F5XKSA1 is available at Aetrix Electronics and suitable for on-board chargers, off-board DC fast chargers, and industrial PFC converters requiring stable component supply, automotive qualification, and high-temperature operational margin.

Supply support for AIGW50N65F5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.

AIGW50N65F5XKSA1 belongs to the TRENCHSTOP™ 5 high-speed IGBT product line, engineered specifically for high-frequency, high-efficiency power conversion in electric vehicle charging infrastructure and industrial power supplies.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies R_G(on) = R_G(off) = 12 Ω for characterization, but practical designs use 5–15 Ω depending on dV/dt constraints and EMI targets. Values above 22 Ω increase switching time and energy loss significantly; values below 5 Ω risk excessive gate current and ringing without proper layout control.

Is the collector-emitter breakdown voltage tested per unit or statistically sampled?

V_(BR)CES = 650 V is 100% production-tested on every device at V_GE = 0 V and I_C = 0.2 mA, per Infineon's quality assurance protocol for high-voltage power devices. No statistical sampling is applied to this critical safety parameter.

Does the integrated anti-parallel diode share the same die as the IGBT?

Yes-the diode is monolithically integrated into the same silicon die using a co-located emitter structure. This ensures matched thermal behavior, tight parameter correlation, and eliminates bond-wire inductance between IGBT and diode terminals.

Can AIGW50N65F5XKSA1 be used in parallel configurations?

Yes-its positive temperature coefficient of V_CE(sat) enables inherent current sharing. Successful paralleling requires matched gate drive paths, symmetrical PCB layout, and individual gate resistors (≤15 Ω) to suppress dynamic imbalance during turn-on/turn-off transitions.

AIGW50N65F5XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: Trenchstop™ 5

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: -

Current - Collector Pulsed (Icm):: 150 A

Vce(on) (Max) @ Vge, Ic:: 2.1V @ 15V, 50A

Power - Max:: 270 W

Switching Energy:: 490µJ (on), 140µJ (off)

Input Type:: Standard

Gate Charge:: 1018 nC

Td (on/off) @ 25°C:: 21ns/156ns

Test Condition:: 400V, 25A, 12Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-41

AIGW50N65F5XKSA1 FAQ

1.How can I place an order for AIGW50N65F5XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for AIGW50N65F5XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AIGW50N65F5XKSA1 reliable?

The price and inventory of AIGW50N65F5XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AIGW50N65F5XKSA1 is usually 5 days.

3.What payment methods are accepted for AIGW50N65F5XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AIGW50N65F5XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AIGW50N65F5XKSA1?

AIGW50N65F5XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AIGW50N65F5XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AIGW50N65F5XKSA1?

For technical support, including AIGW50N65F5XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AIGW50N65F5XKSA1 requirements.

6.How does Aetrix verify that AIGW50N65F5XKSA1 is sourced from the original manufacturer or authorized distributors?

All AIGW50N65F5XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AIGW50N65F5XKSA1 meets industry standards.

7.What is the process for return or replacement of AIGW50N65F5XKSA1?

All AIGW50N65F5XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with AIGW50N65F5XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AIGW50N65F5XKSA1 part is unused and in its original packaging.

Return procedure for AIGW50N65F5XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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