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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies AIGW50N65H5XKSA1

Name: AIGW50N65H5XKSA1
Brand: Infineon Technologies
SKU: AIGW50N65H5XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AIGW50N65H5XKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: AIGW50N65H5XKSA1.pdf

Description:: IGBT 650V TO247-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

AIGW50N65H5XKSA1 from Infineon is a 650 V, 50 A high-speed TRENCHSTOP™ 5 IGBT optimized for hard-switching and resonant topologies in on-board chargers, off-board chargers, and DC/DC converters. It delivers 1.66 V V_CE(sat) at 25°C, 116 nC gate charge, and operates up to 175°C junction temperature with AEC-Q101 qualification.

For engineers reviewing the AIGW50N65H5XKSA1 datasheet, AIGW50N65H5XKSA1 pinout, AIGW50N65H5XKSA1 application, or AIGW50N65H5XKSA1 equivalent, key selection criteria include switching energy (E_on/E_off = 0.45/0.16 mJ at 25°C), thermal resistance (R_th(j–C) = 0.55 K/W), and dynamic parameters under 150°C operation.

Technical Context

This IGBT employs Infineon's fifth-generation TRENCHSTOP™ 5 trench-gate field-stop structure, enabling low conduction loss while maintaining fast turn-off. Its 116 nC total gate charge and 11–24 ns fall time support high-frequency operation up to 40 kHz in PFC and 20–100 kHz in isolated DC/DC stages.

The device integrates a co-packaged ultrafast soft-recovery anti-parallel diode (not separately specified but inherent in TO-247 package implementation) and is characterized across 25°C–150°C with validated E_ts = 0.61 mJ at 25°C and 0.85 mJ at 150°C under standardized inductive load conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	650 V - supports 400 V DC bus designs with 1.6× voltage margin for transient overvoltage in EV charging systems
I_C	50 A continuous - rated for sustained 2.5 kW conduction in 100°C case temperature environments
V_CE(sat)	1.66 V @ 25°C - enables <1.5 W conduction loss at 50 A, critical for thermal management in compact converters
Q_G	116 nC - determines gate driver power requirement (~1.7 W avg. at 100 kHz, 15 V swing) and influences switching speed control
t_d(off)	173 ns @ 25°C - defines minimum dead-time setting in half-bridge configurations to prevent shoot-through
R_th(j–C)	0.55 K/W - allows 270 W dissipation at 25°C case temperature, enabling direct heatsink mounting without thermal interface layer derating
T_vj(max)	175°C - supports operation in automotive under-hood environments and high-ambient industrial enclosures

Pinout & Package

Supplied in PG-TO247-3 package with isolated collector tab (backside). Mounting screw M3 torque limit: 0.6 Nm. RoHS-compliant green molding compound.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	High-impedance MOS-controlled terminal; requires ≤±20 V steady-state and ≤±30 V transient gate drive
Pin 2 + Backside	Collector	Main high-side power terminal; electrically connected to metal tab for low-inductance heatsink coupling
Pin 3	Emitte	Low-side current return path; referenced to driver ground; internal emitter inductance = 13 nH (5 mm from case)

Key Features

Feature	Design Value
Best-in-class efficiency in hard switching	0.61 mJ total switching energy at 25°C enables >98% efficiency in 3.3 kW PFC stages at 50 kHz
Dynamically stress tested	Validated for repetitive avalanche and short-circuit ruggedness per AEC-Q101, supporting fault-tolerant OBC designs
AEC-Q101 qualified	Qualified for automotive-grade reliability including temperature cycling, HTRB, and UHAST - suitable for traction auxiliary systems
Plug-and-play replacement	Pin-compatible and electrically compatible with prior TRENCHSTOP™ 4 IGBTs (e.g., AIGW50N65H4), easing legacy design upgrades
Low Q_G / V_CE(sat) trade-off	116 nC gate charge with 1.66 V saturation voltage achieves optimal balance for 20–100 kHz ZVS/ZCS resonant converter use

Applications

On-Board Charger (OBC)

Off-Board EV Charger

Use Scenario: Bidirectional AC/DC and DC/DC conversion in 11–22 kW vehicle-integrated chargers.

IC Role / Device Role / Timing Role: Primary switch in totem-pole PFC and dual-active-bridge (DAB) isolation stage.

Use Value: 175°C rating and low E_off (0.16 mJ) reduce heatsink mass by ≥30% versus Gen 4 IGBTs in same footprint.

Use Scenario: High-power modular DC fast-charging stations with liquid-cooled power stacks.

IC Role / Device Role / Timing Role: Main switching element in interleaved boost PFC and LLC resonant converter output stage.

Use Value: 0.55 K/W R_th(j–C) enables direct cold-plate mounting, eliminating thermal interface material and reducing thermal resistance by 0.15 K/W.

Industrial DC/DC Converter

Power Factor Correction (PFC)

Use Scenario: 3–5 kW isolated DC/DC supplies for telecom rectifiers and server PSUs.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier replacement in phase-shifted full-bridge topology.

Use Value: Fast 11 ns fall time and 13 nH internal emitter inductance minimize voltage overshoot during hard commutation at 100 kHz.

Use Scenario: Single- or three-phase active PFC front-end in UPS, motor drives, and renewable inverters.

IC Role / Device Role / Timing Role: Switching device in continuous conduction mode (CCM) boost converter operating at 30–65 kHz.

Use Value: 1.66 V V_CE(sat) reduces conduction loss by 18% vs. competing 650 V IGBTs, improving full-load efficiency by 0.4–0.6%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKW50N65ES5XKSA1	Same V_CE/I_C, but 105 nC Q_G and 1.75 V V_CE(sat); lower E_off (0.13 mJ) due to enhanced soft-switching diode	Better suited for ZVS LLC where diode recovery dominates losses; less optimal for hard-switched PFC	Select when diode reverse recovery robustness and zero-voltage turn-on are prioritized over absolute conduction loss
FGH50T65SQDT	650 V/50 A, but 135 nC Q_G, 1.85 V V_CE(sat), and higher R_th(j–C) (0.65 K/W); not AEC-Q101 qualified	Targeted at industrial UPS and solar inverters; lacks automotive qualification and thermal performance headroom	Choose only for cost-sensitive non-automotive applications where 175°C operation and AEC-Q101 are not required

Compared with IKW50N65ES5XKSA1 and FGH50T65SQDT, AIGW50N65H5XKSA1 offers the lowest V_CE(sat) and best thermal resistance among 650 V/50 A IGBTs, making it optimal for thermally constrained, high-efficiency automotive OBC and industrial PFC where conduction loss dominates system thermal design.

Availability

AIGW50N65H5XKSA1 is available at Aetrix Electronics and suitable for on-board chargers, off-board EV chargers, and industrial DC/DC converters requiring stable component supply, automotive-grade reliability, and high-temperature operational continuity.

Supply support for AIGW50N65H5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.

AIGW50N65H5XKSA1 belongs to Infineon's TRENCHSTOP™ 5 high-speed IGBT product line, engineered specifically for high-frequency, high-efficiency switching in electric vehicle power electronics and industrial power conversion systems.

FAQ

What is the maximum recommended gate resistor value for reliable turn-off at 150°C junction temperature?

At Tvj = 150°C, the turn-off delay time increases to 200 ns and fall time to 13 ns. To maintain safe switching margins and limit dv/dt-induced cross-talk, RG(off) should not exceed 15 Ω when using standard 15 V gate drive. Higher values risk excessive E_off (0.24 mJ) and thermal runaway in parallel configurations.

Does AIGW50N65H5XKSA1 include an integrated anti-parallel diode?

No - AIGW50N65H5XKSA1 is a discrete IGBT die in PG-TO247-3 package without an integrated freewheeling diode. System-level anti-parallel functionality must be implemented externally using a separate ultrafast soft-recovery diode, such as IDH08SG60C or similar, matched for Q_rr and t_rr.

Can this IGBT be used in parallel configurations?

Yes - its positive V_GE(th) temperature coefficient (4.0 V typ. at 25°C, 3.5 V at 150°C) ensures current sharing stability. Successful paralleling requires matched gate drive impedance (<5% variation), symmetrical layout, and individual emitter resistors (0.1–0.22 Ω) for dynamic balancing per leg.

Is the backside collector electrically isolated from the mounting screw?

No - the backside collector is metallurgically bonded to the TO-247 metal tab and is electrically identical to Pin 2. The mounting screw contacts the collector potential directly; therefore, electrical isolation between heatsink and circuit ground must be ensured via insulating thermal pads or ceramic washers rated for ≥1 kV DC.

AIGW50N65H5XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: Trenchstop™ 5

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: -

Current - Collector Pulsed (Icm):: 150 A

Vce(on) (Max) @ Vge, Ic:: 2.1V @ 15V, 50A

Power - Max:: 270 W

Switching Energy:: 490µJ (on), 140µJ (off)

Input Type:: Standard

Gate Charge:: 1018 nC

Td (on/off) @ 25°C:: 21ns/156ns

Test Condition:: 400V, 25A, 12Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-41

AIGW50N65H5XKSA1 FAQ

1.How can I place an order for AIGW50N65H5XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for AIGW50N65H5XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AIGW50N65H5XKSA1 reliable?

The price and inventory of AIGW50N65H5XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AIGW50N65H5XKSA1 is usually 5 days.

3.What payment methods are accepted for AIGW50N65H5XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AIGW50N65H5XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AIGW50N65H5XKSA1?

AIGW50N65H5XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AIGW50N65H5XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AIGW50N65H5XKSA1?

For technical support, including AIGW50N65H5XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AIGW50N65H5XKSA1 requirements.

6.How does Aetrix verify that AIGW50N65H5XKSA1 is sourced from the original manufacturer or authorized distributors?

All AIGW50N65H5XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AIGW50N65H5XKSA1 meets industry standards.

7.What is the process for return or replacement of AIGW50N65H5XKSA1?

All AIGW50N65H5XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with AIGW50N65H5XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AIGW50N65H5XKSA1 part is unused and in its original packaging.

Return procedure for AIGW50N65H5XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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