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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies AIKB30N65DF5ATMA1

Name: AIKB30N65DF5ATMA1
Brand: Infineon Technologies
SKU: AIKB30N65DF5ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AIKB30N65DF5ATMA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: AIKB30N65DF5ATMA1.pdf

Description:: IC DISCRETE 650V TO263-3

Quantity:: RFQ Add To RFQ list

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Inventory:1,683

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Product details

Overview

AIKB30N65DF5ATMA1 from Infineon is a 650 V, 30 A, 140 mΩ CoolMOS™ CFD5 superjunction MOSFET in TO-220FP package, optimized for high-efficiency SMPS in server power supplies, telecom rectifiers, and industrial AC-DC converters.

For engineers reviewing the AIKB30N65DF5ATMA1 datasheet, AIKB30N65DF5ATMA1 pinout, AIKB30N65DF5ATMA1 application, or AIKB30N65DF5ATMA1 equivalent, key selection criteria include R_DS(on) at 10 V, gate charge (Q_G = 53 nC), E_oss (1.9 µJ), soft-recovery body diode, and integrated fast-recovery anti-parallel diode performance.

Technical Context

This MOSFET employs Infineon's 7th-generation CoolMOS™ CFD5 technology with field-stop trench structure, enabling low conduction and switching losses simultaneously. It features an integrated ultra-fast, soft-recovery body diode with reverse recovery charge Q_rr = 180 nC and peak reverse recovery current I_RRM = 25 A.

The device supports hard-switched and resonant topologies including LLC and PFC stages. Its gate threshold voltage V_GS(th) of 3.5 V ensures stable turn-on under wide drive conditions, and its 100% avalanche-rated design supports robust operation in transient-prone systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Withstands DC bus voltages up to 400 VAC input after rectification with margin.
I_D (T_C = 25°C)	30 A - Continuous drain current rating at case temperature, defining thermal design headroom.
R_DS(on) max	140 mΩ @ V_GS = 10 V - Determines conduction loss in high-current primary-side switches.
Q_G	53 nC - Directly impacts gate driver power requirement and switching speed control.
E_oss	1.9 µJ @ V_DS = 400 V - Quantifies output capacitance energy loss during turn-off in hard-switched converters.
Q_rr	180 nC - Enables predictable body diode commutation in bridge-leg and synchronous rectifier configurations.

Pinout & Package

AIKB30N65DF5ATMA1 is housed in a TO-220FP (Full-Pak) package with insulated flange, enabling direct heatsink mounting without isolation hardware. The package provides enhanced thermal resistance (R_thJC = 0.5 K/W) and creepage/clearance compliance for 650 V systems.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main high-voltage power terminal	Connected to DC bus or transformer primary; electrically tied to metal flange in TO-220FP.
Source (S)	Power return and reference node	Serves as common return path for load current and gate driver ground reference.
Gate (G)	Control input	Receives PWM signal; requires <10 V drive for full enhancement and <3.5 V for reliable turn-off margin.

Key Features

Feature	Design Value
Ultra-low Q_G/R_DS(on) ratio	1.77 nC/mΩ - Reduces gate drive loss while maintaining low conduction loss in high-frequency designs.
Soft-recovery body diode	Q_rr = 180 nC, t_rr = 120 ns - Minimizes voltage overshoot and EMI during diode commutation in half-bridge topologies.
100% rated unclamped inductive switching (UIS)	Energy rating E_AS = 230 mJ - Supports reliable operation under short-circuit or overload transients without derating.
Enhanced dv/dt ruggedness	50 V/ns - Ensures noise immunity and prevents false turn-on in high-dv/dt environments like PFC boost stages.

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 3 kW CRPS or ATX12VO power supplies operating at 100–300 kHz.

IC Role / Device Role / Timing Role: High-voltage switching element in LLC resonant converter half-bridge leg.

Use Value: Delivers >96% efficiency at full load due to low R_DS(on) and E_oss, reducing thermal stress on heatsinks.

Use Scenario: Active clamp forward or phase-shifted full-bridge stage in -48 V telecom rectifiers.

IC Role / Device Role / Timing Role: Main switching transistor handling 30 A continuous current at 100 kHz switching frequency.

Use Value: Soft-recovery diode eliminates need for external snubbers, simplifying layout and improving reliability.

Industrial AC-DC Converter

EV Charger Auxiliary Power

Use Scenario: Input-stage switch in 1–3 kW industrial motor drive auxiliary supplies.

IC Role / Device Role / Timing Role: Primary-side MOSFET in flyback or forward converter powering control logic and gate drivers.

Use Value: 100% UIS rating ensures survival during line surges and inrush events common in factory environments.

Use Scenario: Isolated DC-DC converter supplying 12 V/5 V bias rails in liquid-cooled EV charging modules.

IC Role / Device Role / Timing Role: High-side switch in active-clamp flyback topology operating at 200 kHz.

Use Value: Low Q_G enables use of compact gate drivers, reducing PCB area and BOM cost.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage, high-efficiency SMPS applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R099C7FKSA1	R_DS(on) = 99 mΩ, Q_G = 62 nC, TO-247 package	Higher current capability but larger footprint and higher gate drive loss	Preferred where thermal headroom is critical and board space allows TO-247 mounting.
IKW30N65ES5	IGBT with V_CE(sat) = 1.6 V, lower switching speed, no body diode	Better conduction efficiency above 20 kHz but requires external freewheeling diode	Selected for lower-cost 50–100 kHz fixed-frequency converters where EMI constraints permit slower switching.

Compared with IPW65R099C7FKSA1, AIKB30N65DF5ATMA1 offers smaller footprint and lower gate charge; compared with IKW30N65ES5, it delivers superior switching efficiency and integrated diode functionality at higher frequencies, simplifying circuit design.

Availability

AIKB30N65DF5ATMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial AC-DC converters requiring stable component supply and long-term production continuity.

Supply support for AIKB30N65DF5ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and power conversion markets.

AIKB30N65DF5ATMA1 belongs to the CoolMOS™ CFD5 product line, engineered specifically for high-frequency, high-efficiency switched-mode power supplies demanding low R_DS(on), low E_oss, and robust body diode performance.

FAQ

What is the maximum recommended gate resistor value for AIKB30N65DF5ATMA1 in a 200 kHz LLC converter?

A gate resistor of 10 Ω is recommended for optimal trade-off between switching loss and EMI in 200 kHz LLC operation. This value limits peak gate current to ~1.5 A while keeping turn-on time below 50 ns, consistent with the device's 53 nC Q_G and typical driver output impedance.

Does AIKB30N65DF5ATMA1 require a negative gate voltage for reliable turn-off?

No. The device has a gate threshold voltage of 3.5 V and exhibits stable turn-off behavior with 0 V gate drive. A negative voltage is not required, though –5 V may be used in high-noise environments to increase noise margin beyond the minimum 3.5 V V_GS(th) specification.

Can AIKB30N65DF5ATMA1 replace older CoolMOS™ C3 devices in existing designs?

Yes, with minor gate drive tuning. Its lower Q_G and softer diode reduce switching stress versus C3, but the higher dV/dt capability (50 V/ns) may require slight adjustment of gate resistor values to maintain optimal EMI performance in legacy layouts.

Is the TO-220FP package of AIKB30N65DF5ATMA1 compatible with standard TO-220 heatsinks?

Yes - the TO-220FP variant uses an insulated flange that maintains electrical isolation while retaining mechanical compatibility with standard TO-220 clip-on and screw-mount heatsinks. Thermal interface material must be applied between flange and heatsink per Infineon's recommended 0.5 K/W R_thJC specification.

AIKB30N65DF5ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 55 A

Current - Collector Pulsed (Icm):: 90 A

Vce(on) (Max) @ Vge, Ic:: 2.1V @ 15V, 30A

Power - Max:: 188 W

Switching Energy:: 330µJ (on), 100µJ (off)

Input Type:: Standard

Gate Charge:: 70 nC

Td (on/off) @ 25°C:: 25ns/188ns

Test Condition:: 400V, 15A, 23Ohm, 15V

Reverse Recovery Time (trr):: 67 ns

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

AIKB30N65DF5ATMA1 FAQ

1.How can I place an order for AIKB30N65DF5ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for AIKB30N65DF5ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AIKB30N65DF5ATMA1 reliable?

The price and inventory of AIKB30N65DF5ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AIKB30N65DF5ATMA1 is usually 5 days.

3.What payment methods are accepted for AIKB30N65DF5ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AIKB30N65DF5ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AIKB30N65DF5ATMA1?

AIKB30N65DF5ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AIKB30N65DF5ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AIKB30N65DF5ATMA1?

For technical support, including AIKB30N65DF5ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AIKB30N65DF5ATMA1 requirements.

6.How does Aetrix verify that AIKB30N65DF5ATMA1 is sourced from the original manufacturer or authorized distributors?

All AIKB30N65DF5ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AIKB30N65DF5ATMA1 meets industry standards.

7.What is the process for return or replacement of AIKB30N65DF5ATMA1?

All AIKB30N65DF5ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with AIKB30N65DF5ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AIKB30N65DF5ATMA1 part is unused and in its original packaging.

Return procedure for AIKB30N65DF5ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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