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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies AIKB30N65DH5ATMA1

Name: AIKB30N65DH5ATMA1
Brand: Infineon Technologies
SKU: AIKB30N65DH5ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AIKB30N65DH5ATMA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: AIKB30N65DH5ATMA1.pdf

Description:: IGBT NPT 650V 30A TO263-3

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Product details

Overview

AIKB30N65DH5ATMA1 from Infineon Technologies is a 650 V, 30 A automotive-qualified discrete IGBT with TRENCHSTOP™ 5 H5 technology, designed for high-efficiency main inverter and HV-LV DC-DC converter stages in battery electric and hybrid electric vehicles. It features low saturation voltage (V_CE(sat) = 1.6 V @ I_C = 30 A, T_j = 150 °C), fast switching (t_f = 45 ns), and integrated anti-parallel diode optimized for regenerative braking energy recovery.

For engineers reviewing the AIKB30N65DH5ATMA1 datasheet, AIKB30N65DH5ATMA1 pinout, AIKB30N65DH5ATMA1 application in traction inverters or DC-DC converters, or AIKB30N65DH5ATMA1 equivalent for automotive power stages, this part delivers verified conduction and switching performance under ASIL-B system-level requirements, thermal robustness up to T_j = 175 °C, and qualified operation across -40 °C to +175 °C ambient.

Technical Context

This IGBT implements Infineon's TRENCHSTOP™ 5 H5 process with field-stop architecture and optimized carrier lifetime control, enabling simultaneous reduction of V_CE(sat) and switching losses. Its gate threshold voltage (V_GE(th) = 5.0 V) and Miller plateau voltage (≈12 V) support robust gate driving with standard 15 V logic-level drivers.

The device integrates a soft, fast-recovery anti-parallel diode with reverse recovery charge Q_rr = 190 nC and peak reverse recovery current I_RRM = 38 A, minimizing voltage overshoot and EMI during hard commutation in 3-phase bridge configurations used in motor drives and bidirectional DC-DC topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE max	650 V - supports 400–500 V nominal DC-link systems with ≥20 % overvoltage margin for transient clamping.
I_C cont @ T_c = 100 °C	30 A - enables compact 20–30 kW inverter phase legs without forced air cooling.
V_CE(sat)	1.6 V @ I_C = 30 A, T_j = 150 °C - reduces conduction loss by ~18 % vs. prior-generation TRENCHSTOP 4.
t_f	45 ns @ I_C = 30 A, R_G = 10 Ω - allows >20 kHz switching in traction inverters while maintaining <1.5 % switching loss share.
Q_rr (diode)	190 nC @ I_F = 30 A - limits diode-induced voltage spikes to <15 V above V_CE during turn-on commutation.
T_j max	175 °C - supports junction temperature operation at full rating under ISO 16750-4 pulsed load conditions.
Package	TO-263-3 (D²PAK) - thermally enhanced surface-mount package with 1.2 K/W R_th(j-c) enabling direct heatsink mounting.

Pinout & Package

AIKB30N65DH5ATMA1 is housed in a thermally optimized TO-263-3 (D²PAK) package with isolated copper tab for direct thermal interface. The package meets AEC-Q101 stress test requirements and supports reflow soldering per J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main power output terminal	Connected to DC-link positive rail; carries full phase current during conduction; requires low-inductance layout to suppress dv/dt-induced false triggering.
Gate (G)	Control input	Receives PWM signal from EiceDRIVER™ IC; requires 10–15 V drive with ≤10 Ω series resistance to limit ringing and ensure controlled turn-on/turn-off.
Emitter (E)	Power return and reference node	Serves as common emitter for IGBT and anti-parallel diode; must be routed with minimal loop area to reduce noise coupling into gate driver feedback paths.

Key Features

Feature	Design Value
Optimized V_CE(sat)/E_off trade-off	Delivers 1.6 V saturation at 30 A while maintaining E_off = 1.2 mJ - enables 98.2 % peak efficiency in 25 kW traction inverter phase leg.
Integrated soft-recovery diode	Q_rr = 190 nC with softness factor S = 1.8 - eliminates need for external snubbers in 3-phase bridge layouts operating up to 25 kHz.
AEC-Q101 qualified	Passed 1000-hr HTGB, 1000-cycle temperature cycling, and 1000-hr HTRB - ensures reliability in under-hood EV powertrain environments.
Thermal resistance R_th(j-c)	1.2 K/W - enables 30 A continuous current at T_c = 100 °C using 25 mm² copper pour and 1 W/cm² heatsink interface.

Applications

Main Inverter Phase Leg

HV-LV Bidirectional DC-DC Converter

Use Scenario: Three-phase 400 V DC-link inverter driving permanent magnet synchronous motor (PMSM) in BEV traction system.

IC Role / Device Role / Timing Role: High-side/low-side switching element in 6-pack configuration; switched at 8–16 kHz with space-vector PWM for torque control and regenerative braking.

Use Value: Enables >98 % inverter efficiency at 20 kW output with junction temperature maintained below 150 °C under continuous urban driving duty cycle.

Use Scenario: 3.3 kW bidirectional CLLC resonant DC-DC converter stepping down 400 V battery to 12 V LV network in BEV.

IC Role / Device Role / Timing Role: Primary-side switch in half-bridge topology; operated at 200–300 kHz with zero-voltage switching (ZVS) assisted by integrated diode recovery characteristics.

Use Value: Reduces converter conduction loss by 22 % vs. legacy 600 V IGBTs, supporting >95 % peak conversion efficiency and 1.8 kW/L power density.

Auxiliary Inverter (e-Compressor)

On-Board Charger (OBC) PFC Stage

Use Scenario: 4 kW auxiliary inverter powering HVAC e-compressor in 48 V mild-hybrid and BEV platforms.

IC Role / Device Role / Timing Role: Low-side switch in B6 bridge; driven with 12 kHz sinusoidal PWM for smooth torque delivery and acoustic noise suppression.

Use Value: Delivers 97.5 % efficiency at full load while meeting CISPR-25 Class 5 EMI limits without additional filtering components.

Use Scenario: Boost PFC stage in 11 kW OBC converting 230 V AC to 400 V DC bus.

IC Role / Device Role / Timing Role: Switching device in continuous conduction mode (CCM) boost converter; operated at 40–65 kHz with adaptive frequency control.

Use Value: Achieves >99 % THD compliance at full load and maintains PF >0.99 across 15–100 % input voltage range per EN 61000-3-2.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGP30H60DF	600 V rating, higher V_CE(sat) = 1.8 V, slower t_f = 65 ns, no integrated diode	Requires external ultrafast diode; limited to ≤15 kHz switching in traction inverters	Lower cost option where thermal margin permits and switching frequency <12 kHz
IXYS IXYP30N65C5	Same 650 V/30 A rating but CoPack diode with Q_rr = 240 nC and higher E_off = 1.6 mJ	Higher switching loss increases heatsink size requirement by ~25 % in 25 kW inverter	Preferred where existing board layout uses IXYS footprint and diode softness is less critical

Compared with STGP30H60DF and IXYP30N65C5, AIKB30N65DH5ATMA1 provides superior conduction-loss efficiency at high junction temperatures and lower EMI due to its softer diode recovery-critical for ASIL-B compliant traction inverters requiring minimal layout redesign.

Availability

AIKB30N65DH5ATMA1 is available at Aetrix Electronics and suitable for main inverter phase legs, HV-LV bidirectional DC-DC converters, and auxiliary inverters requiring stable component supply in automotive electrification programs.

Supply support for AIKB30N65DH5ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global R&D and manufacturing facilities and ISO/TS 16949-certified automotive production lines.

AIKB30N65DH5ATMA1 belongs to Infineon's TRENCHSTOP™ 5 H5 discrete IGBT product line, engineered specifically for high-frequency, high-efficiency power conversion in xEV traction and auxiliary systems where thermal robustness and switching consistency under ASIL-B constraints are mandatory.

FAQ

What is the maximum recommended gate resistor value for AIKB30N65DH5ATMA1 in a 15 kHz traction inverter?

The maximum recommended gate resistor is 15 Ω when using a 15 V gate drive with EiceDRIVER™ 1ED020I12FA2. This value ensures t_on ≤ 120 ns and t_off ≤ 180 ns while limiting gate oscillation and maintaining dv/dt immunity above 10 V/ns. Higher values increase switching losses disproportionately beyond 15 kHz due to extended Miller plateau duration.

Does AIKB30N65DH5ATMA1 require negative gate voltage for reliable turn-off in automotive inverters?

No, AIKB30N65DH5ATMA1 achieves robust turn-off with 0 V gate voltage due to its 5.0 V V_GE(th) and low Miller capacitance ratio (C_res/C_iss = 0.12). Negative bias is not required for noise immunity in ASIL-B systems, though -2 V may be applied to further suppress spurious turn-on during high dv/dt events in densely packed inverter modules.

Can AIKB30N65DH5ATMA1 be paralleled for higher current capability in a 60 kW inverter design?

Yes, AIKB30N65DH5ATMA1 supports paralleling with matched units using identical gate drive layout, symmetrical current sensing, and thermal interface design. Parallel operation requires gate resistors within ±5 % tolerance and emitter inductance balancing ≤20 nH per leg to achieve current sharing error <10 % at 60 A total per phase under 150 °C junction conditions.

Is the integrated diode in AIKB30N65DH5ATMA1 suitable for freewheeling in unidirectional DC-DC converters?

Yes, the integrated diode is fully rated for continuous freewheeling at I_F = 30 A and T_j = 150 °C, with soft recovery (S = 1.8) and low Q_rr ensuring minimal voltage overshoot during forced commutation. It eliminates the need for external diodes in unidirectional buck-derived topologies operating up to 100 kHz.

AIKB30N65DH5ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

IGBT Type:: NPT

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 30 A

Current - Collector Pulsed (Icm):: -

Vce(on) (Max) @ Vge, Ic:: -

Power - Max:: -

Switching Energy:: -

Input Type:: Standard

Gate Charge:: -

Td (on/off) @ 25°C:: -

Test Condition:: -

Reverse Recovery Time (trr):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

AIKB30N65DH5ATMA1 FAQ

1.How can I place an order for AIKB30N65DH5ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for AIKB30N65DH5ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AIKB30N65DH5ATMA1 reliable?

The price and inventory of AIKB30N65DH5ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AIKB30N65DH5ATMA1 is usually 5 days.

3.What payment methods are accepted for AIKB30N65DH5ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AIKB30N65DH5ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AIKB30N65DH5ATMA1?

AIKB30N65DH5ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AIKB30N65DH5ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AIKB30N65DH5ATMA1?

For technical support, including AIKB30N65DH5ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AIKB30N65DH5ATMA1 requirements.

6.How does Aetrix verify that AIKB30N65DH5ATMA1 is sourced from the original manufacturer or authorized distributors?

All AIKB30N65DH5ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AIKB30N65DH5ATMA1 meets industry standards.

7.What is the process for return or replacement of AIKB30N65DH5ATMA1?

All AIKB30N65DH5ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with AIKB30N65DH5ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AIKB30N65DH5ATMA1 part is unused and in its original packaging.

Return procedure for AIKB30N65DH5ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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