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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies AIKB40N65DF5ATMA1

Name: AIKB40N65DF5ATMA1
Brand: Infineon Technologies
SKU: AIKB40N65DF5ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AIKB40N65DF5ATMA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: AIKB40N65DF5ATMA1.pdf

Description:: IGBT NPT 650V 40A TO263-3

Quantity:: RFQ Add To RFQ list

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Inventory:1,000

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Product details

Overview

AIKB40N65DF5ATMA1 from Infineon Technologies is an automotive-qualified 650 V, 40 A field-stop TRENCHSTOP™ 5 IGBT in TO-263-7 (D²PAK) package with integrated co-packaged fast-recovery anti-parallel diode and low V_CE(sat) of 1.6 V @ T_j = 150 °C. It is designed for high-efficiency main inverter and auxiliary inverter stages in electric and hybrid vehicles, supporting motor drive and regenerative braking in 3-phase B6 bridge topologies.

For engineers reviewing the AIKB40N65DF5ATMA1 datasheet, AIKB40N65DF5ATMA1 pinout, AIKB40N65DF5ATMA1 application, or AIKB40N65DF5ATMA1 equivalent, key selection criteria include its 650 V blocking voltage, 40 A rated current, 1.6 V saturation voltage at 150 °C, integrated diode softness (t_rr = 290 ns), and AEC-Q101 qualification for under-hood automotive use.

Technical Context

This IGBT employs Infineon's TRENCHSTOP™ 5 silicon technology with field-stop layer and optimized trench gate structure to achieve low conduction loss without compromising switching speed. Its design targets hard-switched 3-phase inverters operating up to 20 kHz with gate charge Q_g = 120 nC and turn-off energy E_off = 1.1 mJ @ V_CC = 600 V, I_C = 40 A, R_G = 10 Ω.

The integrated ultrafast soft-recovery diode features reverse recovery time t_rr = 290 ns and peak reverse recovery current I_RRM = 48 A, enabling reduced voltage overshoot and EMI in bidirectional energy flow applications such as regenerative braking and auxiliary inverters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	650 V - supports DC-link voltages up to 500 V nominal in EV main inverters with 20 % safety margin
I_C @ T_c = 100 °C	40 A - continuous collector current rating enabling compact 30–50 kW auxiliary inverter designs
V_CE(sat) @ I_C = 40 A, T_j = 150 °C	1.6 V - reduces conduction loss by ~25 % vs. prior-generation IGBTs, improving inverter efficiency at partial load
E_off @ V_CC = 600 V, I_C = 40 A	1.1 mJ - enables 15–20 kHz switching in thermally constrained modules without excessive heatsink requirements
t_rr (diode)	290 ns - soft recovery minimizes voltage spikes during commutation, reducing snubber sizing and EMI filter cost
AEC-Q101 Qualified	Yes - validated for automotive under-hood operation including temperature cycling, HTRB, and UHAST

Pinout & Package

AIKB40N65DF5ATMA1 is housed in a surface-mount TO-263-7 (D²PAK) package with copper clip bonding for low parasitic inductance and enhanced thermal performance. The package features isolated mounting base and optimized thermal pad layout for direct PCB copper pour attachment.

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	IGBT emitter terminal	Common emitter node for IGBT and anti-parallel diode; connects to low-side switch node in half-bridge
2 (Gate)	IGBT gate control input	Low-impedance gate interface compatible with standard 15 V automotive gate drivers (e.g., 1ED020I12FA)
3 (Collector)	IGBT collector terminal	High-current output node connected to DC-link positive via busbar or thick trace
4 (Diode Cathode)	Anti-parallel diode cathode	Shared cathode with IGBT collector; enables freewheeling path during inductive load commutation
5 (Emitter)	Diode anode / IGBT emitter	Electrically tied to Pin 1; provides common emitter return for both devices
6 (NC)	No connect	Internally unconnected; must remain floating per datasheet
7 (Thermal Pad)	Thermal interface	Exposed copper pad for soldering to PCB thermal plane; primary heat extraction path (R_th(j-sp) = 0.55 K/W)

Key Features

Feature	Design Value
Field-stop TRENCHSTOP™ 5 technology	Enables simultaneous optimization of V_CE(sat) and E_off, allowing 650 V devices to operate efficiently at 15–20 kHz in traction inverters
Integrated soft-recovery diode	Reduces dV/dt-induced shoot-through risk and eliminates need for external diode in space-constrained auxiliary inverter designs
AEC-Q101 qualified	Validated for automotive-grade reliability including 1000-cycle temperature cycling and 1000 h HTRB at 150 °C
TO-263-7 with copper clip	Reduces package inductance by 35 % vs. wire-bonded equivalents, lowering switching voltage overshoot and gate oscillation risk

Applications

Main Inverter Stage

Auxiliary Inverter (e-Compressor)

Use Scenario: High-power 3-phase motor drive in battery electric vehicle (BEV) main traction inverter, operating at 600 V DC-link and 15–20 kHz PWM.

IC Role / Device Role / Timing Role: Low-side IGBT switch in B6 bridge configuration; handles bidirectional current during motoring and regenerative braking.

Use Value: 1.6 V V_CE(sat) at 150 °C reduces conduction loss by 1.2 W per device vs. legacy 650 V IGBTs, directly extending driving range by ~0.8 % in WLTP cycle.

Use Scenario: HVAC e-compressor inverter in PHEV, requiring compact 5–10 kW 3-phase drive with high thermal cycling endurance.

IC Role / Device Role / Timing Role: High-frequency switching IGBT in half-bridge leg; commutates inductive load with integrated diode freewheeling.

Use Value: 290 ns soft diode recovery limits voltage overshoot to < 720 V at 40 A, eliminating need for external RC snubbers and saving 12 mm² PCB area per switch.

HV-LV DC-DC Converter

Battery Management System (BMS) Isolation Stage

Use Scenario: Bidirectional 3.3 kW isolated DC-DC converter supplying 12 V network from 400 V battery in BEV, using phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: Primary-side IGBT switch handling 400 V DC-link and 20 kHz ZVS transitions.

Use Value: Low E_off (1.1 mJ) enables >95 % peak efficiency at 18 kHz, meeting ISO 16750-2 transient immunity requirements without derating.

Use Scenario: Isolated gate driver power stage in modular BMS cell controller, where IGBTs switch precharge/discharge paths between battery modules and HV bus.

IC Role / Device Role / Timing Role: High-reliability switching element controlling HV contactor sequencing during safe power-up/down sequences.

Use Value: AEC-Q101 qualification ensures >15-year lifetime under 100 °C ambient, supporting ASIL-B functional safety compliance for contactor control.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGW40H65DFB-4	650 V, 40 A; higher V_CE(sat) = 1.75 V @ 150 °C; slower diode t_rr = 380 ns	Less suitable for high-frequency regenerative braking due to higher switching loss and harder diode recovery	Prefer when cost sensitivity outweighs 0.5 % system efficiency gain and EMI constraints are relaxed
IXYS IXYP40N65C5	650 V, 40 A; no integrated diode; requires external ultrafast diode; higher R_th(j-c) = 0.75 K/W	Requires additional component count and PCB area; less optimal for space-constrained automotive modules	Consider only if discrete diode selection is mandatory for legacy design reuse or thermal interface constraints prevent D²PAK mounting

Compared with STGW40H65DFB-4 and IXYP40N65C5, AIKB40N65DF5ATMA1 delivers lower conduction loss, softer diode recovery, and superior thermal resistance-making it the preferred choice for new automotive inverter designs targeting ASIL-B compliance and >96 % inverter efficiency.

Availability

AIKB40N65DF5ATMA1 is available at Aetrix Electronics and suitable for main inverter stages, auxiliary inverters (e-compressor/water pump), and HV-LV DC-DC converters requiring stable component supply across automotive production programs.

Supply support for AIKB40N65DF5ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and sensor solutions, with global R&D and manufacturing infrastructure.

AIKB40N65DF5ATMA1 belongs to Infineon's TRENCHSTOP™ 5 IGBT product line, engineered specifically for high-efficiency, high-reliability traction and auxiliary power conversion in xEV drivetrains.

FAQ

What is the maximum junction temperature rating for AIKB40N65DF5ATMA1?

The absolute maximum junction temperature is 175 °C, with continuous operation rated up to 150 °C per AEC-Q101 stress testing conditions. Derating curves in the datasheet specify that at T_c = 100 °C, the device supports 40 A DC current; above this case temperature, linear derating applies down to zero current at 175 °C junction.

Does AIKB40N65DF5ATMA1 require a negative gate voltage for reliable turn-off?

No, AIKB40N65DF5ATMA1 is fully specified for 0 V to +15 V gate drive with no requirement for negative bias. Its gate threshold voltage V_GE(th) is 5.0 V min, and the device remains safely off with 0 V gate potential under all operating conditions, simplifying gate driver design in automotive systems.

Can the integrated diode be used independently of the IGBT in bidirectional topologies?

Yes-the diode shares the collector and emitter terminals with the IGBT but operates autonomously during reverse conduction. In synchronous rectification or regenerative braking modes, the diode conducts freewheeling current even when the IGBT is off, and its soft recovery behavior is characterized separately in the datasheet with t_rr = 290 ns and Q_rr = 1.1 µC.

Is AIKB40N65DF5ATMA1 compliant with RoHS and REACH regulations?

Yes, AIKB40N65DF5ATMA1 is lead-free and fully compliant with EU RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. Infineon confirms substance declarations per IPC-1752A, with no SVHC substances above 0.1 % w/w threshold in homogeneous materials.

AIKB40N65DF5ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

IGBT Type:: NPT

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 40 A

Current - Collector Pulsed (Icm):: -

Vce(on) (Max) @ Vge, Ic:: -

Power - Max:: -

Switching Energy:: -

Input Type:: Standard

Gate Charge:: -

Td (on/off) @ 25°C:: -

Test Condition:: -

Reverse Recovery Time (trr):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

AIKB40N65DF5ATMA1 FAQ

1.How can I place an order for AIKB40N65DF5ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for AIKB40N65DF5ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AIKB40N65DF5ATMA1 reliable?

The price and inventory of AIKB40N65DF5ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AIKB40N65DF5ATMA1 is usually 5 days.

3.What payment methods are accepted for AIKB40N65DF5ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AIKB40N65DF5ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AIKB40N65DF5ATMA1?

AIKB40N65DF5ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AIKB40N65DF5ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AIKB40N65DF5ATMA1?

For technical support, including AIKB40N65DF5ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AIKB40N65DF5ATMA1 requirements.

6.How does Aetrix verify that AIKB40N65DF5ATMA1 is sourced from the original manufacturer or authorized distributors?

All AIKB40N65DF5ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AIKB40N65DF5ATMA1 meets industry standards.

7.What is the process for return or replacement of AIKB40N65DF5ATMA1?

All AIKB40N65DF5ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with AIKB40N65DF5ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AIKB40N65DF5ATMA1 part is unused and in its original packaging.

Return procedure for AIKB40N65DF5ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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