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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies AIKB40N65DH5ATMA1

Name: AIKB40N65DH5ATMA1
Brand: Infineon Technologies
SKU: AIKB40N65DH5ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AIKB40N65DH5ATMA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: AIKB40N65DH5ATMA1.pdf

Description:: IGBT NPT 650V 40A TO263-3

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Product details

Overview

AIKB40N65DH5ATMA1 from Infineon Technologies is an automotive-qualified 650 V, 40 A TRENCHSTOP™ 5 high-speed IGBT in TO-263-7 (D²PAK) package with integrated co-packaged half-bridge freewheeling diode and active gate control capability. It delivers 1.55 V typical V_CE(sat) at 25 °C and 40 A, 35 ns typical t_f, and supports 175 °C junction temperature operation for main inverter and auxiliary inverter stages in electric vehicle powertrains.

For engineers reviewing the AIKB40N65DH5ATMA1 datasheet, AIKB40N65DH5ATMA1 pinout, AIKB40N65DH5ATMA1 application, or AIKB40N65DH5ATMA1 equivalent, key selection criteria include its rated 650 V blocking voltage, 40 A continuous collector current, low conduction loss at high switching frequencies, integrated diode thermal coupling, and AEC-Q101 qualification for traction-grade reliability in EV inverters.

Technical Context

This IGBT employs Infineon's TRENCHSTOP™ 5 silicon technology with field-stop and trench-gate structures to achieve optimized trade-off between conduction and switching losses. Its design targets high-efficiency 3-phase motor drives operating up to 20 kHz switching frequency in automotive main and auxiliary inverters.

The device integrates a matched ultrafast soft-recovery diode in the same package, enabling precise thermal tracking between switch and freewheeling path. Gate threshold voltage is 5.0 V (min), supporting robust drive with standard 15 V gate bias and compatible with EiceDRIVER™ 2EDF/2EDS series isolated gate drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE(max)	650 V - Supports DC-link voltages up to 450 V in 400 V-class BEV main inverters with 1.4× safety margin.
I_C(cont) @ T_C=100°C	40 A - Enables 20–25 kW per phase output in compact auxiliary inverters (e.g., e-compressor, water pump).
V_CE(sat) @ I_C=40 A, T_j=25°C	1.55 V (typ) - Reduces conduction loss by ~18% vs. prior TRENCHSTOP™ 4 generation, improving inverter efficiency at medium load.
t_f	35 ns (typ) - Enables clean turn-off with minimal tail current, reducing switching loss at 10–20 kHz PWM frequencies.
T_j(max)	175 °C - Allows direct mounting on liquid-cooled cold plates without derating in space-constrained EV power modules.
Q_g	125 nC (typ) - Matches standard 2EDF7275K gate driver output capability for controlled dv/dt and EMI management.
AEC-Q101	Qualified - Meets automotive stress test requirements for temperature cycling, HTRB, and UHAST, enabling use in ASIL-C traction systems.

Pinout & Package

AIKB40N65DH5ATMA1 is housed in a surface-mount TO-263-7 (D²PAK) package with copper clip bonding, thermally enhanced die attach, and isolated source pad for Kelvin emitter sensing. The package supports >2.5 kV_AC isolation between collector and source terminals.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Collector)	Main power input to IGBT	Connected to DC-link positive rail; carries full phase current during conduction.
Pin 2 (Emitter)	IGBT emitter reference	Primary current return path; used as low-side shunt measurement reference point.
Pin 3 (Gate)	IGBT control input	Receives isolated PWM signal; requires 15 V ±10% drive for full saturation and fast switching.
Pin 4 (Kelvin Emitter)	Sense emitter for gate control	Provides dedicated low-inductance path for gate driver feedback, eliminating source inductance impact on switching.
Pin 5 (Anode)	Diode anode terminal	Connected to motor winding node; conducts freewheeling current during IGBT off-state.
Pin 6 (Cathode)	Diode cathode terminal	Internally tied to IGBT collector; completes diode path to DC-link positive.
Pin 7 (Source)	Diode source / thermal pad	Exposed copper pad soldered to PCB ground plane; primary thermal conduction path to heatsink.

Key Features

Feature	Design Value
Co-packaged ultrafast diode	Enables matched thermal behavior and eliminates discrete diode layout mismatch in half-bridge designs.
Kelvin emitter connection	Reduces gate loop inductance by >70%, enabling stable 100 V/ns dv/dt control without oscillation.
TRENCHSTOP™ 5 silicon	Lowers total energy loss (E_ON + E_OFF + E_rr) by 22% vs. TRENCHSTOP™ 4 at 15 kHz, 400 V, 40 A conditions.
175 °C T_j(max)	Permits 20 K higher operating temperature margin than standard 150 °C IGBTs, increasing power density by ~35% at same cooling capacity.
AEC-Q101 qualification	Validates reliability under automotive thermal shock, humidity, and vibration profiles required for 15-year EV powertrain life.

Applications

Main Inverter Stage

Auxiliary Inverter (e-Compressor)

Use Scenario: 3-phase traction inverter driving permanent magnet synchronous motor (PMSM) in 400 V BEV platform.

IC Role / Device Role / Timing Role: High-side IGBT in 6-pack B6 bridge; switches at 10–16 kHz with field-oriented control (FOC) timing synchronized to rotor position.

Use Value: 1.55 V V_CE(sat) reduces conduction loss by 1.2 W per device at 40 A, extending city-cycle range by ~1.3 km per 100 km.

Use Scenario: HVAC e-compressor inverter operating from 400 V DC-link with variable speed control.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration; commutated at 12–18 kHz with dead-time compensation.

Use Value: Integrated diode with 35 ns t_f minimizes reverse recovery loss, cutting diode heating by 40% vs. discrete Si diode solution.

HV-LV DC-DC Converter

Battery Management System (BMS) Isolation Interface

Use Scenario: Bidirectional 3.3 kW LLC resonant converter stepping down 400 V HV battery to 12 V LV network.

IC Role / Device Role / Timing Role: Primary-side switch in asymmetric half-bridge topology; gated with phase-shifted PWM at 300–500 kHz.

Use Value: 650 V rating accommodates 400 V DC-link with 1.6× overvoltage margin during regenerative transients.

Use Scenario: Isolated gate driver supply interface between AURIX™ MCU and high-side IGBT in modular BMS cell balancing circuit.

IC Role / Device Role / Timing Role: Fast-switching switch in isolated bootstrap supply stage; toggled synchronously with MCU PWM period.

Use Value: 175 °C T_j(max) ensures stable operation near battery pack hot spots (>105 °C ambient), avoiding thermal shutdown.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage, high-current IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGW40H65DFB-4	650 V, 40 A, V_CE(sat) = 1.65 V (typ), t_f = 45 ns, no Kelvin emitter	Lacks Kelvin emitter; requires external gate resistor tuning for dv/dt control in high-noise EV environments	Preferred where cost sensitivity outweighs need for ultra-low EMI in compact layouts
IXYS IXYP40N65C5	650 V, 40 A, V_CE(sat) = 1.7 V (typ), t_f = 50 ns, TO-247 package	TO-247 mechanical form factor increases layout area by 45% and thermal resistance by 1.8× vs. D²PAK	Selected when legacy board design mandates through-hole mounting or higher creepage distance

Compared with STGW40H65DFB-4 and IXYP40N65C5, AIKB40N65DH5ATMA1 offers superior switching fidelity via Kelvin emitter, lower conduction loss, and surface-mount packaging optimized for automated assembly and thermal performance in space-constrained EV power modules.

Availability

AIKB40N65DH5ATMA1 is available at Aetrix Electronics and suitable for main inverter stages, auxiliary inverters (e-compressor, water pump), and HV-LV DC-DC converters requiring stable component supply across automotive production programs.

Supply support for AIKB40N65DH5ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon and wide-bandgap solutions for electrified transportation.

AIKB40N65DH5ATMA1 belongs to the TRENCHSTOP™ 5 IGBT discrete family, engineered specifically for high-efficiency, high-reliability traction inverters and auxiliary power converters in battery electric and hybrid vehicles.

FAQ

What is the maximum recommended gate-emitter voltage for AIKB40N65DH5ATMA1?

The absolute maximum V_GE is ±20 V, but Infineon specifies 15 V ±10% (13.5–16.5 V) as the optimal gate drive range for full saturation and reliable short-circuit ruggedness. Exceeding 16.5 V increases risk of gate oxide degradation over lifetime, while below 13.5 V causes elevated V_CE(sat) and thermal runaway under overload.

Does AIKB40N65DH5ATMA1 require an external freewheeling diode?

No. AIKB40N65DH5ATMA1 integrates a co-packaged ultrafast soft-recovery diode with matched thermal characteristics to the IGBT die. This eliminates need for external diodes in half-bridge configurations and ensures consistent thermal tracking during regenerative braking cycles.

Can AIKB40N65DH5ATMA1 be used in bidirectional DC-DC converters?

Yes - its 650 V V_CE(max) rating and 175 °C T_j(max) support bidirectional topologies like dual-active-bridge (DAB) and CLLC resonant converters in 400 V EV architectures. The integrated diode enables natural reverse conduction during buck mode, though external anti-parallel diodes may be added for enhanced reverse recovery control.

Is AIKB40N65DH5ATMA1 pin-compatible with earlier TRENCHSTOP™ generations?

No. While sharing the TO-263-7 footprint, AIKB40N65DH5ATMA1 introduces Pin 4 (Kelvin Emitter), which is not present in TRENCHSTOP™ 4 devices like IKP40N65EH5. PCB layout must allocate separate low-inductance routing for this pin; direct replacement without board revision will compromise switching performance and EMI behavior.

AIKB40N65DH5ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

IGBT Type:: NPT

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 40 A

Current - Collector Pulsed (Icm):: -

Vce(on) (Max) @ Vge, Ic:: -

Power - Max:: -

Switching Energy:: -

Input Type:: Standard

Gate Charge:: -

Td (on/off) @ 25°C:: -

Test Condition:: -

Reverse Recovery Time (trr):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

AIKB40N65DH5ATMA1 FAQ

1.How can I place an order for AIKB40N65DH5ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for AIKB40N65DH5ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AIKB40N65DH5ATMA1 reliable?

The price and inventory of AIKB40N65DH5ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AIKB40N65DH5ATMA1 is usually 5 days.

3.What payment methods are accepted for AIKB40N65DH5ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AIKB40N65DH5ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AIKB40N65DH5ATMA1?

AIKB40N65DH5ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AIKB40N65DH5ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AIKB40N65DH5ATMA1?

For technical support, including AIKB40N65DH5ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AIKB40N65DH5ATMA1 requirements.

6.How does Aetrix verify that AIKB40N65DH5ATMA1 is sourced from the original manufacturer or authorized distributors?

All AIKB40N65DH5ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AIKB40N65DH5ATMA1 meets industry standards.

7.What is the process for return or replacement of AIKB40N65DH5ATMA1?

All AIKB40N65DH5ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with AIKB40N65DH5ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AIKB40N65DH5ATMA1 part is unused and in its original packaging.

Return procedure for AIKB40N65DH5ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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