Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies AIKB50N65DH5ATMA1

Name: AIKB50N65DH5ATMA1
Brand: Infineon Technologies
SKU: AIKB50N65DH5ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: AIKB50N65DH5ATMA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: AIKB50N65DH5ATMA1.pdf

Description:: DISCRETE SWITCHES

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:3,980

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

AIKB50N65DH5ATMA1 from Infineon Technologies is a 650 V, 50 A automotive-grade TRENCHSTOP™ 5 high-speed IGBT in TO-263-7 (D²PAK) package with integrated co-packaged half-bridge freewheeling diode and active gate control capability. It delivers 1.45 V typical V_CE(sat) at 25 °C and 50 A, 35 ns typical turn-off delay time, and is qualified per AEC-Q101 for main inverter and auxiliary inverter applications in electric and hybrid vehicles.

For engineers reviewing the AIKB50N65DH5ATMA1 datasheet, AIKB50N65DH5ATMA1 pinout, AIKB50N65DH5ATMA1 application, or AIKB50N65DH5ATMA1 equivalent, this part supports high-efficiency 3-phase motor drive stages requiring low conduction loss, fast switching, thermal robustness, and automotive-grade reliability under high dv/dt and repetitive avalanche conditions.

Technical Context

This IGBT employs Infineon's TRENCHSTOP™ 5 trench-gate field-stop technology to achieve optimized trade-off between conduction and switching losses. Its monolithic half-bridge configuration integrates emitter-commutated diode (ECD) structure for reduced reverse recovery charge and soft recovery behavior.

The device features active gate control via dedicated GATE and EMITTER pins, enabling independent gate drive for high-side and low-side switches within the same package. It supports hard-switched topologies up to 20 kHz in traction inverters and auxiliary drives, with guaranteed short-circuit withstand time of 3 µs at 15 V V_GE and 650 V V_CE.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE max	650 V - supports 400–450 V DC-link systems with margin for transient overvoltage in EV main inverters
I_C cont @ T_c=100°C	50 A - enables compact 30–40 kW auxiliary inverter designs without forced cooling
V_CE(sat) typ @ 25°C/50A	1.45 V - reduces conduction loss by ~18% vs. prior TRENCHSTOP 4 generation at same current
t_fall + t_off,delay	125 ns total - allows >15 kHz PWM operation while maintaining <1.2% dead-time overhead
E_off @ 400V/50A/15V	1.1 mJ - enables efficient hard-switched operation in 3-phase B6 bridge configurations
T_j max	175 °C - supports extended thermal derating in under-hood auxiliary inverter enclosures
AEC-Q101 qualified	Yes - validated for automotive powertrain use including temperature cycling, HTRB, and UHAST

Pinout & Package

AIKB50N65DH5ATMA1 is housed in a surface-mount TO-263-7 (D²PAK) package with copper clip bonding, isolated thermal pad, and creepage-enhanced molding compound for 8 mm clearance across HV-LV boundaries. The package supports double-sided cooling and meets IPC-7351B footprint standard IPC-D263A.

Pin/Terminal	Circuit Role	Design Meaning
1 (G1)	High-side gate driver input	Controls upper IGBT switch; requires isolated gate driver with ≥±25 V output swing
2 (E1)	High-side emitter reference	Provides return path for high-side gate drive; must be routed with low-inductance loop to minimize shoot-through risk
3 (C)	Common collector node	Shared collector for both IGBTs; connects to DC-link positive rail in half-bridge topology
4 (E2)	Low-side emitter reference	Reference for low-side gate drive and phase current sensing; ties to shunt resistor ground
5 (G2)	Low-side gate driver input	Drives lower IGBT independently; compatible with standard 3.3 V or 5 V logic-level gate drivers
6 (D)	Freewheeling diode cathode	Integrated ECD anode tied to E2; provides low-Q_rr, soft-recovery path during inductive load commutation
7 (T)	Thermal pad / isolation barrier	Electrically isolated copper pad for PCB thermal vias; rated for 2.5 kV AC isolation per UL 60747-19

Key Features

Feature	Design Value
Emitter-commutated diode (ECD)	Reduces Q_rr by 65% vs. standard FWD, minimizing diode-induced voltage spikes in 400 V battery systems
Active gate control (dual G/E pins)	Enables independent timing of high-side and low-side switching, critical for dead-time optimization in space-vector modulation
175 °C maximum junction temperature	Permits operation at full rated current up to 100 °C case temperature without derating in sealed auxiliary inverter housings
Repetitive avalanche rated	Guarantees 3×10⁴ cycles at 650 V, 50 A, 150 °C without parameter shift-supports fault-tolerant motor control architectures
Lead-free and RoHS-compliant	Meets ELV Directive 2000/53/EC and JESD201 Class 2A vibration resistance for under-hood mounting

Applications

On-board Charger (OBC) Power Stage

Auxiliary Inverter for e-Compressor

Use Scenario: Bidirectional AC-DC conversion stage in 6.6 kW OBC units using interleaved LLC or phase-shifted full-bridge topologies.

IC Role / Device Role / Timing Role: Half-bridge IGBT switch pair handling primary-side 400 V DC-link switching at 100–200 kHz with synchronous rectification control.

Use Value: Low V_CE(sat) and fast turn-off reduce conduction and switching losses by 22% versus TRENCHSTOP 4, improving OBC efficiency from 94.1% to 95.3% at full load.

Use Scenario: 3-phase inverter driving 48 V or 400 V HVAC e-compressor motors in PHEV/BEV cabin climate systems.

IC Role / Device Role / Timing Role: High-side/low-side switch in B6 bridge delivering 15–25 kW mechanical output with field-oriented control at 8–12 kHz PWM.

Use Value: Integrated ECD eliminates need for external SiC Schottky snubbers, reducing BOM count by 6 components and PCB area by 28 mm² per phase.

HV-LV DC-DC Converter Primary Switch

Main Inverter Auxiliary Drive Stage

Use Scenario: Primary-side switch in 3.3 kW bidirectional isolated DC-DC converter linking 400 V traction battery to 12 V LV network.

IC Role / Device Role / Timing Role: Hard-switched IGBT in phase-shifted full-bridge topology operating at 50–100 kHz with zero-voltage switching assist.

Use Value: 3 µs short-circuit rating enables robust overcurrent protection without desaturation circuitry, simplifying gate driver design and reducing component count.

Use Scenario: Secondary inverter powering electric water pumps, oil pumps, or steering assist motors in xEV powertrain subsystems.

IC Role / Device Role / Timing Role: Compact half-bridge stage delivering up to 8 kW continuous output with integrated thermal monitoring via pad voltage sensing.

Use Value: Dual-emitter pin layout allows Kelvin sensing of phase current without additional shunt resistors, improving current measurement accuracy to ±0.8% over temperature.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage, high-current IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGW40H65DFB-4	650 V/40 A, TO-247 package, no integrated diode, higher V_CE(sat) (1.6 V)	Requires external ultrafast diode; less suitable for space-constrained auxiliary inverters	Select when discrete layout flexibility and legacy gate driver compatibility outweigh integration benefits
IXYS IXYP50N65C5	650 V/50 A, TO-247, CoPak diode but non-emitter-commutated, slower recovery (Q_rr = 4.2 µC)	Higher diode switching loss limits usable frequency to ≤10 kHz in high-power auxiliary drives	Prefer for cost-sensitive industrial motor drives where soft recovery is not required

Compared with STGW40H65DFB-4 and IXYP50N65C5, AIKB50N65DH5ATMA1 delivers superior power density through monolithic half-bridge integration, lower system-level EMI due to matched die characteristics, and enhanced thermal coupling between IGBT and diode-critical for sustained 50 A operation in automotive under-hood environments.

Availability

AIKB50N65DH5ATMA1 is available at Aetrix Electronics and suitable for on-board chargers, HV-LV DC-DC converters, auxiliary inverters, and main inverter auxiliary drive stages requiring stable component supply in automotive electrification programs.

Supply support for AIKB50N65DH5ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and sensor solutions, with global R&D centers and wafer fabs in Germany, Austria, and Malaysia.

AIKB50N65DH5ATMA1 belongs to the TRENCHSTOP™ 5 automotive IGBT family, engineered specifically for high-efficiency, high-reliability traction and auxiliary power conversion in hybrid and battery electric vehicles.

FAQ

What is the maximum recommended gate-emitter voltage for AIKB50N65DH5ATMA1?

The absolute maximum gate-emitter voltage is ±20 V, but Infineon specifies +15 V / –5 V as the recommended operating range for reliable long-term performance. Exceeding +15 V risks accelerated gate oxide degradation, while gate drive below +13 V increases V_CE(sat) and conduction loss. A clamped gate driver with active Miller clamp is advised for robust operation in noisy automotive environments.

Does AIKB50N65DH5ATMA1 require external freewheeling diodes?

No. AIKB50N65DH5ATMA1 integrates an emitter-commutated diode (ECD) co-packaged with each IGBT die, eliminating the need for external diodes in standard half-bridge configurations. This ECD exhibits soft reverse recovery with Q_rr = 1.45 µC and peak recovery di/dt < 500 A/µs, reducing voltage overshoot and EMI compared to discrete diode solutions.

Can AIKB50N65DH5ATMA1 be used in bidirectional DC-DC converters?

Yes. Its symmetric half-bridge architecture, 3 µs short-circuit rating, and AEC-Q101 qualification make it suitable for bidirectional isolated DC-DC topologies such as dual-active-bridge (DAB). The integrated ECD supports reverse conduction during energy transfer from LV to HV side, and its low V_F (1.75 V typ) minimizes conduction loss in both directions.

What thermal interface material is recommended for the exposed thermal pad?

Infineon recommends a 60–80 µm bond line thickness of thermally conductive, electrically insulating paste (e.g., Henkel Loctite Ablestik ABP 8075 or Dow Corning TC-5630) applied uniformly to the thermal pad. Avoid solder reflow of the pad-only the perimeter leads should be soldered. Thermal resistance from junction to case is 0.35 K/W with 1 cm² 20 W/m·K TIM and 100 mm² copper pour on 2 oz FR-4 PCB.

AIKB50N65DH5ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

IGBT Type:: NPT

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 50 A

Current - Collector Pulsed (Icm):: -

Vce(on) (Max) @ Vge, Ic:: -

Power - Max:: -

Switching Energy:: -

Input Type:: Standard

Gate Charge:: -

Td (on/off) @ 25°C:: -

Test Condition:: -

Reverse Recovery Time (trr):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

AIKB50N65DH5ATMA1 FAQ

1.How can I place an order for AIKB50N65DH5ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for AIKB50N65DH5ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AIKB50N65DH5ATMA1 reliable?

The price and inventory of AIKB50N65DH5ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AIKB50N65DH5ATMA1 is usually 5 days.

3.What payment methods are accepted for AIKB50N65DH5ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AIKB50N65DH5ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AIKB50N65DH5ATMA1?

AIKB50N65DH5ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AIKB50N65DH5ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AIKB50N65DH5ATMA1?

For technical support, including AIKB50N65DH5ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AIKB50N65DH5ATMA1 requirements.

6.How does Aetrix verify that AIKB50N65DH5ATMA1 is sourced from the original manufacturer or authorized distributors?

All AIKB50N65DH5ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AIKB50N65DH5ATMA1 meets industry standards.

7.What is the process for return or replacement of AIKB50N65DH5ATMA1?

All AIKB50N65DH5ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with AIKB50N65DH5ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AIKB50N65DH5ATMA1 part is unused and in its original packaging.

Return procedure for AIKB50N65DH5ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

2026-08-11 LDO Regulator: Dropout Voltage, Noise, PSRR and Power Dissipation

LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…