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Infineon Technologies AIKBE50N65RF5ATMA1
- Part No.:
- AIKBE50N65RF5ATMA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single IGBTs
- Package:
- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Datasheet:
-
AIKBE50N65RF5ATMA1.pdf
- Description:
- IGBT TRENCH FS 650V 96A TO263-7
- Quantity:
- Payment:
- Shipping:
Inventory:619
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Product details
Overview
AIKBE50N65RF5ATMA1 from Infineon is a 650 V, 50 A CoolSiC™ Hybrid Discrete integrating a TRENCHSTOP™ 5 fast-switching IGBT and a CoolSiC™ Schottky diode G5 in a single PG-TO263-7-HV-ND4.2 package with Kelvin emitter connection. It delivers low switching losses (Eon = 0.12 mJ, Eoff = 0.09 mJ @ 25°C), VCEsat = 1.66–2.03 V across -40 to 175°C, and QG = 108 nC - optimized for high-efficiency on-board chargers and DC/DC converters in automotive traction inverters and auxiliary power systems.
For engineers reviewing the AIKBE50N65RF5ATMA1 datasheet, AIKBE50N65RF5ATMA1 pinout, AIKBE50N65RF5ATMA1 application, or AIKBE50N65RF5ATMA1 equivalent, key selection criteria include its Kelvin-emitter layout for gate drive stability, dual-die thermal resistance (Rth(j-c) = 0.35–0.46 K/W IGBT / 0.48–0.62 K/W diode), AEC-Q100/101 qualification, and hard-switching performance at 175°C junction temperature.
Technical Context
This hybrid discrete combines an IGBT with trench-gate field-stop structure and a silicon carbide Schottky diode in monolithic co-packaging. The IGBT features low VCEsat drift over temperature and fast turn-off (td(off) = 136–176 ns), while the diode provides zero reverse recovery charge and VF = 1.45–1.8 V across -40 to 175°C.
The Kelvin emitter terminal isolates gate drive return path from high-current emitter routing, minimizing voltage overshoot and improving switching controllability under high di/dt. Its PG-TO263-7-HV-ND4.2 package supports high-power density mounting with isolated tab (collector) and seven emitter terminals for current sharing and thermal spreading.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCE max | 650 V - Enables use in 400–500 V battery systems with 20%+ voltage margin for transients and ripple. |
| IC (rated) | 50 A - Continuous collector current rating at Tc = 100°C, supporting compact OBC/DC-DC designs. |
| VCE(sat) | 1.66–2.03 V - Low conduction loss across -40 to 175°C, reducing thermal stress and improving efficiency at full load. |
| QG | 108 nC - Enables fast, low-loss switching with standard gate drivers; reduces driver power demand. |
| Tvj(max) | 175°C - Supports operation in under-hood environments without derating in automotive applications. |
| Eon/Eoff | 0.12/0.09 mJ @ 25°C - Low total switching energy enables >100 kHz operation in resonant topologies like LLC. |
| VF (diode) | 1.45–1.8 V @ 30 A - SiC Schottky forward drop with no reverse recovery, eliminating diode switching loss and EMI. |
Pinout & Package
Package: PG-TO263-7-HV-ND4.2 - surface-mount, high-voltage rated, thermally enhanced variant of TO-263 with isolated collector tab and 7-pin emitter configuration.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate | Main gate control input for IGBT; requires stable 15 V drive with low-inductance loop. |
| Pin 2 | Kelvin Emitter | Dedicated low-current emitter reference for gate driver feedback - critical for accurate VGE control during switching. |
| Pins 3–7 | Emitter | High-current emitter return paths; parallel connection reduces resistive loss and improves thermal distribution. |
| Tab | Collector | Isolated high-side power terminal; electrically and thermally connected to IGBT/diode collector nodes. |
Key Features
| Feature | Design Value |
|---|---|
| Kelvin emitter connection | Enables precise gate drive referencing independent of high-current emitter voltage drop, improving switching consistency and noise immunity. |
| CoolSiC™ Schottky diode G5 | Zero reverse recovery charge eliminates diode tail current and associated switching loss, enabling higher-frequency operation and reduced EMI. |
| TRENCHSTOP™ 5 IGBT | Optimized trench-gate design delivers low VCE(sat) and fast turn-off with minimal temperature-dependent drift. |
| AEC-Q100/101 qualified | Validated for automotive-grade reliability including temperature cycling, HTRB, and humidity testing - suitable for safety-critical OBC/DC-DC systems. |
Applications
| On-Board Charger (OBC) | High-Voltage DC/DC Converter |
|---|---|
|
Use Scenario: Bidirectional AC/DC and DC/DC conversion in 400 V BEV platforms with 11 kW output. IC Role / Device Role / Timing Role: Main switching device in interleaved totem-pole PFC and phase-shifted full-bridge isolation stages. Use Value: Low QG and Kelvin emitter enable stable 100–150 kHz operation with <1.5% efficiency penalty vs. SiC MOSFET-only solutions. |
Use Scenario: 800 V to 12 V/48 V conversion for vehicle domain controllers and ADAS ECUs. IC Role / Device Role / Timing Role: Primary-side switch in resonant LLC topology operating at 300–500 kHz with soft switching. Use Value: SiC diode's zero Qrr eliminates body diode conduction loss, increasing light-load efficiency by 3–5% over IGBT+Si diode alternatives. |
| Automotive Traction Inverter Auxiliary Stage | 48 V Mild Hybrid System DC/DC |
|
Use Scenario: Auxiliary power supply for gate drivers, sensors, and cooling pumps in main traction inverter modules. IC Role / Device Role / Timing Role: High-side switch in synchronous buck regulator feeding 12 V rail from 400 V battery. Use Value: 175°C Tvj(max) allows direct integration into inverter housing without additional heatsinking, saving board space. |
Use Scenario: Step-down converter in 48 V belt-driven starter-generator (BISG) systems with regenerative braking. IC Role / Device Role / Timing Role: Hard-switched primary switch in asymmetric half-bridge topology handling bidirectional power flow. Use Value: Low Ets (0.21 mJ @ 25°C) reduces thermal load during frequent start-stop cycles, extending system lifetime. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar hybrid IGBT-diode switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IKW50N65ES5 | 650 V, 50 A TRENCHSTOP™ 5 IGBT + ultrafast Si diode (not SiC); no Kelvin emitter; Rth(j-c) = 0.42 K/W. | Lacks SiC diode's zero Qrr; higher switching loss limits frequency to ≤60 kHz in hard-switched topologies. | Lower cost option where efficiency >97% is not required and thermal margin permits larger heatsink. |
| AIKFE50N65RF5 | Same die set but in PG-HSOF-8 package; includes dedicated source sense pin instead of Kelvin emitter; identical electrical specs. | Designed for through-hole mounting and different PCB layout constraints; lacks Kelvin emitter's gate drive precision under high di/dt. | Preferred for legacy through-hole assembly lines or where mechanical robustness outweighs switching fidelity needs. |
Compared with IKW50N65ES5 and AIKFE50N65RF5, AIKBE50N65RF5ATMA1 uniquely combines Kelvin emitter control, SiC diode zero-recovery, and surface-mount PG-TO263-7-HV packaging - delivering optimal trade-off between switching fidelity, thermal performance, and automotive production compatibility.
Availability
AIKBE50N65RF5ATMA1 is available at Aetrix Electronics and suitable for on-board chargers, high-voltage DC/DC converters, and automotive auxiliary power supplies requiring stable component supply, AEC-Q101 compliance, and long-term automotive lifecycle support.
Supply support for AIKBE50N65RF5ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.
AIKBE50N65RF5ATMA1 belongs to Infineon's CoolSiC™ Hybrid Discrete product line - engineered specifically to bridge the performance gap between conventional IGBTs and full-SiC modules in cost-sensitive, high-reliability automotive power conversion.
FAQ
What is the purpose of the Kelvin emitter pin (Pin 2) in AIKBE50N65RF5ATMA1?
Pin 2 serves as a dedicated low-current emitter reference for the gate driver, decoupling gate loop impedance from high-current emitter paths. This ensures accurate VGE control during fast switching, suppresses Miller-induced false turn-on, and maintains consistent timing across temperature and load - critical for stable operation above 100 kHz.
How does the CoolSiC™ Schottky diode improve system-level efficiency compared to a silicon fast recovery diode?
The integrated CoolSiC™ Schottky diode eliminates reverse recovery charge (Qrr = 0), removing associated switching loss, voltage spikes, and EMI generation. In hard-switched topologies, this reduces total diode-related loss by ≥70% versus Si FRD, enabling higher-frequency operation and up to 1.2% system efficiency gain at 11 kW OBC full load.
Can AIKBE50N65RF5ATMA1 be used in unidirectional applications only, or does it support bidirectional power flow?
AIKBE50N65RF5ATMA1 supports bidirectional power flow in topologies like totem-pole PFC when paired with complementary devices. While the IGBT conducts only in forward direction, the anti-parallel CoolSiC™ Schottky diode handles reverse current with zero recovery loss - enabling efficient AC line rectification and regenerative energy return in OBC systems.
What thermal interface material and mounting torque are recommended for the collector tab in PG-TO263-7-HV-ND4.2?
Infineon recommends using 0.1 mm thick thermally conductive silicone pad (e.g., Laird Tflex 400 series) or phase-change material (e.g., Henkel Gap Pad VOX) with 1.2–1.5 N·m torque on M3 screws. Mounting pressure must ensure uniform contact across the entire tab area to maintain Rth(j-c) ≤ 0.46 K/W for the IGBT die.
AIKBE50N65RF5ATMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolSiC™
- Package/Case:
- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- IGBT Type:
- Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max):
- 650 V
- Current - Collector (Ic) (Max):
- 96 A
- Current - Collector Pulsed (Icm):
- 150 A
- Vce(on) (Max) @ Vge, Ic:
- 2.1V @ 15V, 50A
- Power - Max:
- 326 W
- Switching Energy:
- 120µJ (on), 90µJ (off)
- Input Type:
- Standard
- Gate Charge:
- 108 nC
- Td (on/off) @ 25°C:
- 16.8ns/136ns
- Test Condition:
- 400V, 25A, 9Ohm, 15V
- Reverse Recovery Time (trr):
- -
- Operating Temperature:
- -40°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO263-7-U04
AIKBE50N65RF5ATMA1 FAQ
1.How can I place an order for AIKBE50N65RF5ATMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for AIKBE50N65RF5ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AIKBE50N65RF5ATMA1 reliable?
The price and inventory of AIKBE50N65RF5ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AIKBE50N65RF5ATMA1 is usually 5 days.
3.What payment methods are accepted for AIKBE50N65RF5ATMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AIKBE50N65RF5ATMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AIKBE50N65RF5ATMA1?
AIKBE50N65RF5ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AIKBE50N65RF5ATMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AIKBE50N65RF5ATMA1?
For technical support, including AIKBE50N65RF5ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AIKBE50N65RF5ATMA1 requirements.
6.How does Aetrix verify that AIKBE50N65RF5ATMA1 is sourced from the original manufacturer or authorized distributors?
All AIKBE50N65RF5ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AIKBE50N65RF5ATMA1 meets industry standards.
7.What is the process for return or replacement of AIKBE50N65RF5ATMA1?
All AIKBE50N65RF5ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with AIKBE50N65RF5ATMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AIKBE50N65RF5ATMA1 part is unused and in its original packaging.
Return procedure for AIKBE50N65RF5ATMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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