Infineon Technologies AIKQ120N75CP2XKSA1

Overview

AIKQ120N75CP2XKSA1 from Infineon is a 750 V, 120 A short-circuit rugged EDT2 IGBT co-packed with a fast soft-recovery emitter-controlled diode in TO-247PLUS package. It delivers 1.3 V typical V_CE(sat) at 120 A/25°C, 5 µs short-circuit withstand time at 470 V, and positive thermal coefficient for stable parallel operation - deployed in xEV traction inverters and DC-link discharge switches.

For engineers reviewing the AIKQ120N75CP2XKSA1 datasheet, AIKQ120N75CP2XKSA1 pinout, AIKQ120N75CP2XKSA1 application, or AIKQ120N75CP2XKSA1 equivalent, key selection criteria include short-circuit robustness (t_SC = 5 µs), low gate charge (Q_G = 731 nC), tight V_GE(th) distribution (5.2–6.4 V), co-packaged diode recovery performance (Q_rr = 3.58 µC), and AEC-Q101 qualification for automotive systems.

Technical Context

This EDT2 IGBT uses field-stop trench gate technology with optimized carrier lifetime control to achieve high short-circuit ruggedness while maintaining low conduction and switching losses. Its integrated emitter-controlled diode features soft reverse recovery (I_rrm = 33 A, Q_rr = 3.58 µC at 25°C) and low forward voltage (V_F = 1.95 V at 120 A/25°C).

The device operates across –40°C to +175°C junction temperature, exhibits positive V_CE(sat) temperature coefficient (1.3 V → 1.53 V from 25°C to 175°C), and supports simple gate drive design with ±20 V V_GE rating and 731 nC total gate charge - enabling robust paralleling and reduced EMI in high-power inverters.

Key Specifications

Pinout & Package

AIKQ120N75CP2XKSA1 is housed in PG-TO247-3-U01 (TO-247PLUS) package with extended creepage distance and isolated backside collector terminal. The package supports high-reliability automotive mounting and enhanced thermal performance via direct case-to-heatsink contact.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT switching applications.

Compared with IKW120N75ES5XKSA1, AIKQ120N75CP2XKSA1 trades slightly higher conduction loss for lower gate drive complexity and proven field reliability in traction inverters; versus AIKQ120N75CP2HXKSA1, it differs only in marking and environmental compliance - not electrical behavior.

Availability

AIKQ120N75CP2XKSA1 is available at Aetrix Electronics and suitable for xEV traction inverters, DC-link discharge circuits, and automotive auxiliary drives requiring stable component supply, AEC-Q101 validation, and production-grade thermal robustness.

Supply support for AIKQ120N75CP2XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.

This device belongs to Infineon's EDT2 (Electrically Driven Trench) IGBT product line, engineered specifically for high-reliability, high-power automotive traction and industrial motor drives where short-circuit ruggedness and thermal stability are critical.

FAQ

What is the maximum allowable gate-emitter voltage for AIKQ120N75CP2XKSA1?

The absolute maximum gate-emitter voltage is ±20 V DC, with transient rating of ±30 V for pulses shorter than 0.1 µs. Exceeding ±20 V continuously risks oxide degradation and threshold shift; gate drive circuits must include clamping (e.g., Zener diodes) to stay within this limit under all operating and fault conditions.

Does AIKQ120N75CP2XKSA1 require negative gate voltage for reliable turn-off?

No - the device is fully compatible with 0 V / +15 V gate drive, though –8 V / +15 V is recommended for optimal noise immunity and reduced Miller-induced false turn-on. Test data shows stable switching down to 0 V turn-off, but automotive designs typically use –5 V to –8 V to meet EMC requirements in noisy inverter environments.

How does the co-packaged diode differ from standard FRD or SiC Schottky diodes?

This emitter-controlled diode is monolithically integrated with the IGBT die and optimized for soft reverse recovery (low dI/dt, no current tail), with Q_rr = 3.58 µC and I_rrm = 33 A at 25°C. Unlike discrete FRDs, it shares thermal and layout advantages of co-packaging; unlike SiC Schottkys, it supports 750 V blocking but has higher V_F (1.95 V).

Is AIKQ120N75CP2XKSA1 pin-compatible with previous-generation Infineon IGBTs like IKW120N75T7?

Yes - it uses the same PG-TO247-3-U01 footprint and pinout (C/G/E), enabling drop-in replacement in existing layouts. However, gate drive timing and snubber values may require minor optimization due to differences in Q_G (731 nC vs. 650 nC) and switching speed (e.g., t_d(off) = 244 ns vs. 220 ns at 25°C).