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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies AIKQ200N75CP2XKSA1

Name: AIKQ200N75CP2XKSA1
Brand: Infineon Technologies
SKU: AIKQ200N75CP2XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AIKQ200N75CP2XKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: AIKQ200N75CP2XKSA1.pdf

Description:: IGBT TRENCH 750V 200A TO247-3

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Product details

Overview

AIKQ200N75CP2XKSA1 from Infineon is a 750 V, 200 A short-circuit rugged EDT2 IGBT co-packed with a fast soft-recovery emitter-controlled diode in TO-247PLUS package. It delivers V_CE(sat) = 1.3 V (typ.) at 200 A/25°C, t_sc = 5 µs at 470 V, and supports parallel operation via positive thermal coefficient and tight parameter distribution - deployed in xEV inverter main switch stages.

For engineers reviewing the AIKQ200N75CP2XKSA1 datasheet, AIKQ200N75CP2XKSA1 pinout, AIKQ200N75CP2XKSA1 application, or AIKQ200N75CP2XKSA1 equivalent, key selection criteria include short-circuit robustness, low conduction loss in 470 V DC-link systems, gate drive simplicity, and validated AEC-Q101 qualification for automotive traction inverters.

Technical Context

This EDT2 IGBT uses field-stop trench gate technology with optimized carrier lifetime control to achieve simultaneous low V_CE(sat) (1.3 V) and short-circuit withstand time (5 µs). Its integrated emitter-controlled diode features soft recovery (Q_rr = 4.7 µC, t_rri controlled) and low V_F (1.95 V at 200 A/25°C), minimizing switching losses and EMI in hard-switched inverter legs.

The device operates across –40°C to +175°C junction temperature, with R_th(j–c) = 0.14 K/W (IGBT) and 0.26 K/W (diode), enabling high-power density designs. Pin configuration (C/G/E) and backside collector metallization support low-inductance mounting and thermal interface optimization in double-sided cooling layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	750 V - Enables use in 470 V DC-link systems with 59% overvoltage margin vs. 400 V nominal bus.
I_C (nom)	200 A at T_c = 25°C - Reduces parallel count by ≥3× vs. 75 A-class IGBTs in same thermal envelope.
V_CE(sat)	1.3 V (typ., 200 A, 25°C) - Low conduction loss yields <1.5 W static loss per device at rated current.
t_sc	5 µs at V_CE = 470 V, V_GE = 15 V - Supports robust fault handling without external desat detection delay penalties.
Q_G	1260 nC - Enables simple ±15 V gate drive with standard 2–5 Ω turn-on/off resistors.
T_vj(max)	175°C - Allows sustained operation under high ambient conditions typical of under-hood xEV power modules.
V_F (diode)	1.95 V (200 A, 25°C) - Minimizes reverse recovery energy (E_rec = 1.32 mJ) and commutation stress.

Pinout & Package

AIKQ200N75CP2XKSA1 uses PG-TO247-3-U01 (TO-247PLUS) package with isolated creepage distance (>4 mm), copper baseplate, and backside collector metallization for double-sided cooling. Pin assignment: Pin C (collector), Pin G (gate), Pin E (emitter); collector also accessible via solderable backside surface.

Pin/Terminal	Circuit Role	Design Meaning
C (Pin + Backside)	Collector	High-current output node; backside metallization enables low-inductance, low-thermal-resistance connection to heatsink or DC-link capacitor.
G	Gate	Control input requiring ±15 V drive; low Q_G (1260 nC) permits compact gate driver IC integration.
E	Emitter	Reference node for gate drive and current sensing; separate emitter pin enables Kelvin connection for accurate V_CE(sat) monitoring.

Key Features

Feature	Design Value
Short-circuit ruggedness	t_sc = 5 µs at 470 V ensures reliable fault clearing without desaturation circuitry overhead in 400–470 V DC-link systems.
Positive thermal coefficient	Enables stable current sharing in parallel configurations - reduces need for active current balancing circuits.
Co-packed soft-recovery diode	Q_rr = 4.7 µC (25°C), low Irrm (41 A) minimizes voltage overshoot and snubber requirements in inverter freewheeling paths.
Low gate charge	Q_G = 1260 nC allows use of cost-effective gate drivers (e.g., 1EDC/1EDF families) without boost stages.

Applications

xEV Traction Inverter

DC-Link Discharge Switch

Use Scenario: Main switching device in 3-phase inverter leg driving permanent magnet synchronous motor in battery electric vehicles.

IC Role / Device Role / Timing Role: High-side/low-side switching element handling 200 A RMS, 600 A peak, and 750 V blocking during regenerative braking and motoring.

Use Value: Short-circuit robustness (5 µs) and low V_CE(sat) reduce system-level thermal design burden and improve efficiency over full torque-speed range.

Use Scenario: Active discharge path for high-voltage DC-link capacitors after vehicle shutdown or fault condition.

IC Role / Device Role / Timing Role: Controlled high-current switch activated post-shutdown to safely bleed 400–470 V DC-link to <60 V within 1–3 seconds.

Use Value: Rated 200 A continuous and 600 A pulsed current enables rapid discharge without derating or parallel devices; AEC-Q101 qualification ensures reliability in safety-critical discharge function.

Automotive Auxiliary Drive

Industrial Motor Drive Inverter

Use Scenario: Power stage for HVAC compressor, electric power steering, or coolant pump in 48 V mild-hybrid or 400 V BEV architectures.

IC Role / Device Role / Timing Role: Half-bridge switch operating at 8–20 kHz PWM frequency with soft-switching constraints and thermal cycling durability.

Use Value: Tight V_GE(th) distribution (5.2–6.4 V) and positive dV_CE/dT_j enable predictable turn-on timing and reduced shoot-through risk in compact auxiliary inverters.

Use Scenario: Output stage in industrial variable-frequency drives for pumps, fans, and conveyors operating from 400 V AC mains rectified to ~540 V DC bus.

IC Role / Device Role / Timing Role: Hard-switched IGBT in 2-level or 3-level NPC topology, handling 150–250 A load current with >10⁵ thermal cycles.

Use Value: R_th(j–c) = 0.14 K/W and 175°C max junction temperature allow higher power density than legacy 650 V devices, reducing heatsink volume by ~30%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-power IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXYS40N120B3	1200 V rating, lower I_C (40 A), no integrated diode, TO-247 package	Suitable for higher bus voltage (800 V+) but requires external diode and more parallel units for 200 A current	Select when system bus exceeds 750 V or when discrete diode selection is preferred for recovery tuning.
STMicroelectronics STGW40H65DFB	650 V rating, 40 A I_C, integrated diode, TO-247 package	Limited to ≤400 V DC-link; not qualified to AEC-Q101; lower short-circuit immunity (t_sc ≈ 2 µs)	Consider only for non-automotive industrial applications with strict cost constraints and lower voltage requirements.

Compared with IXYS40N120B3 and STGW40H65DFB, AIKQ200N75CP2XKSA1 uniquely combines 200 A current rating, 750 V blocking, AEC-Q101 qualification, and co-packaged soft diode - eliminating external diode design effort while meeting xEV inverter thermal and reliability targets.

Availability

AIKQ200N75CP2XKSA1 is available at Aetrix Electronics and suitable for xEV traction inverters, DC-link discharge systems, and automotive auxiliary drives requiring stable component supply, long-term lifecycle support, and traceable automotive-grade sourcing.

Supply support for AIKQ200N75CP2XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in automotive and industrial power electronics.

AIKQ200N75CP2XKSA1 belongs to Infineon's EDT2 (Enhanced Diode Technology 2) IGBT product line, engineered specifically for high-efficiency, high-reliability traction inverters in battery electric vehicles where short-circuit robustness, thermal stability, and space-constrained packaging are critical.

FAQ

What is the maximum allowable gate-emitter voltage for AIKQ200N75CP2XKSA1?

The absolute maximum gate-emitter voltage is ±20 V DC, with transient capability up to ±30 V for pulses shorter than 0.1 µs. Operation beyond ±20 V risks permanent gate oxide damage; recommended gate drive is ±15 V with tight regulation to ensure safe turn-on and noise-immune turn-off.

Does AIKQ200N75CP2XKSA1 require a negative gate voltage for reliable turn-off?

Yes - the datasheet specifies gate drive of –8 V / +15 V for optimal switching performance and noise immunity. A –8 V turn-off bias suppresses Miller-induced false turn-on during high dv/dt commutation events, especially critical in parallel configurations and high-frequency inverter operation.

Can AIKQ200N75CP2XKSA1 be used without an external freewheeling diode?

Yes - it integrates a fast soft-recovery emitter-controlled diode rated for 200 A continuous and 600 A pulsed current. This eliminates need for external diodes in standard 2-level inverter topologies, provided the diode's Q_rr (4.7 µC) and V_F (1.95 V) meet system EMI and efficiency targets.

Is AIKQ200N75CP2XKSA1 qualified for under-hood automotive environments?

Yes - it is fully qualified per AEC-Q101 for discrete semiconductors, including extended temperature cycling (–40°C to +175°C), humidity testing, and mechanical shock/vibration. Its TO-247PLUS package with high creepage distance supports placement in engine bay proximity where thermal and contamination challenges exist.

AIKQ200N75CP2XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench

Voltage - Collector Emitter Breakdown (Max):: 750 V

Current - Collector (Ic) (Max):: 200 A

Current - Collector Pulsed (Icm):: 600 A

Vce(on) (Max) @ Vge, Ic:: -

Power - Max:: 576 W

Switching Energy:: 15.3mJ (on), 7mJ (off)

Input Type:: Standard

Gate Charge:: 1256 nC

Td (on/off) @ 25°C:: 89ns/266ns

Test Condition:: -

Reverse Recovery Time (trr):: -

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

AIKQ200N75CP2XKSA1 FAQ

1.How can I place an order for AIKQ200N75CP2XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for AIKQ200N75CP2XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AIKQ200N75CP2XKSA1 reliable?

The price and inventory of AIKQ200N75CP2XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AIKQ200N75CP2XKSA1 is usually 5 days.

3.What payment methods are accepted for AIKQ200N75CP2XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AIKQ200N75CP2XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AIKQ200N75CP2XKSA1?

AIKQ200N75CP2XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AIKQ200N75CP2XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AIKQ200N75CP2XKSA1?

For technical support, including AIKQ200N75CP2XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AIKQ200N75CP2XKSA1 requirements.

6.How does Aetrix verify that AIKQ200N75CP2XKSA1 is sourced from the original manufacturer or authorized distributors?

All AIKQ200N75CP2XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AIKQ200N75CP2XKSA1 meets industry standards.

7.What is the process for return or replacement of AIKQ200N75CP2XKSA1?

All AIKQ200N75CP2XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with AIKQ200N75CP2XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AIKQ200N75CP2XKSA1 part is unused and in its original packaging.

Return procedure for AIKQ200N75CP2XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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