Infineon Technologies AIKW30N60CTXKSA1

Overview

AIKW30N60CTXKSA1 from Infineon is a 600 V, 30 A automotive-grade IGBT in a PG-TO247-3 package with integrated soft-recovery Emitter Controlled diode, featuring 1.5 V typical V_CE(sat) at 25°C, 175°C max junction temperature, and 5 µs short-circuit withstand time - deployed in main inverters and climate compressor drives for electric vehicles.

For engineers reviewing the AIKW30N60CTXKSA1 datasheet, AIKW30N60CTXKSA1 pinout, AIKW30N60CTXKSA1 application, or AIKW30N60CTXKSA1 equivalent, key selection criteria include V_CE(sat) temperature stability, diode reverse recovery charge (Q_rr = 0.80 µC @ 25°C), gate charge (Q_G = 167 nC), short-circuit ruggedness, and AEC-Q101 qualification status.

Technical Context

This IGBT employs TRENCHSTOP™ and Fieldstop technology optimized for 600 V automotive traction and auxiliary power conversion. It integrates a co-packaged Emitter Controlled HE diode with 85 ns typical reverse recovery time at 25°C and 240 ns at 175°C, enabling low EMI and reduced snubber stress in hard-switched topologies.

The device exhibits a positive temperature coefficient for V_CE(sat), supporting parallel operation without current imbalance. Its dynamic parameters - including 254 ns turn-off delay and 0.77 mJ turn-off energy at 25°C - are characterized under standardized inductive load conditions (V_CC = 400 V, I_C = 30 A, R_G = 10.6 Ω).

Key Specifications

Pinout & Package

AIKW30N60CTXKSA1 uses the PG-TO247-3 package: insulated case, vertical lead frame, 3-terminal configuration with isolated tab. Mounting torque: 0.6 Nm (M3 screw). Not recommended for surface-mount assembly.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT-in-DuoPack applications.

Compared with IKW30N60T and AIKW40N60CT, AIKW30N60CTXKSA1 uniquely delivers AEC-Q101 compliance at the 30 A/600 V node, balancing gate drive simplicity, thermal headroom, and automotive-grade process control - making it optimal for volume production of ISO 26262 ASIL-B compliant inverters.

Availability

AIKW30N60CTXKSA1 is available at Aetrix Electronics and suitable for main inverters, climate compressor drives, and PTC heater control systems requiring stable component supply, automotive qualification traceability, and long-term lifecycle support.

Supply support for AIKW30N60CTXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.

This part belongs to the TRENCHSTOP™ Low Loss DuoPack series, engineered specifically for high-reliability, high-efficiency automotive traction and auxiliary power conversion where ruggedness, thermal stability, and integrated diode performance are critical.

FAQ

What is the maximum allowable gate-emitter voltage for AIKW30N60CTXKSA1?

The absolute maximum gate-emitter voltage is ±20 V, as specified in the Maximum Ratings table. Operation beyond this limit risks permanent gate oxide damage. Recommended gate drive is +15 V for turn-on and –5 V to –10 V for turn-off to ensure robust noise immunity and prevent spurious turn-on during high dv/dt transients.

Does AIKW30N60CTXKSA1 require an external freewheeling diode?

No. The device integrates a soft, fast-recovery Emitter Controlled HE diode co-packaged in the same TO247-3 housing. This diode provides bidirectional current capability with 85 ns reverse recovery time at 25°C, eliminating the need for a discrete antiparallel diode in standard inverter half-bridge configurations.

How is short-circuit protection implemented using the 5 µs t_SC specification?

The 5 µs short-circuit withstand time defines the maximum duration the device can safely conduct fault current before thermal runaway occurs. Protection must be implemented externally via fast current sensing (e.g., desaturation detection) and gate drive shutdown within ≤3 µs to maintain margin, as confirmed by Infineon's dynamic test conditions (V_GE = 15 V, V_CC ≤ 400 V, T_vj = 150°C).

Can AIKW30N60CTXKSA1 be paralleled with identical units?

Yes - its positive temperature coefficient of V_CE(sat) ensures inherent current sharing under thermal imbalance. Successful paralleling requires matched gate drive impedance (<±5% variation), symmetrical PCB layout, and shared heatsink mounting to minimize thermal gradients. Derating to 85% of total rated current per device is recommended for long-term reliability.