Infineon Technologies AIKW40N65DF5XKSA1

Overview

AIKW40N65DF5XKSA1 from Infineon is a 650 V, 40 A high-speed TRENCHSTOP™ 5 IGBT copacked with a RAPID 1 fast/soft antiparallel diode in PG-TO247-3 package, rated for 175 °C junction operation and qualified to AEC-Q101. It delivers low V_CE(sat) of 1.6 V at 40 A/25 °C and ultra-low gate charge (Q_G = 95 nC), enabling high-efficiency hard-switching in on-board chargers and DC/DC converters.

For engineers reviewing the AIKW40N65DF5XKSA1 datasheet, AIKW40N65DF5XKSA1 pinout, AIKW40N65DF5XKSA1 application, or AIKW40N65DF5XKSA1 equivalent, key selection criteria include its 175 °C max junction temperature, 73 ns diode reverse recovery time (20 A, 25 °C), 0.60 K/W IGBT thermal resistance (j–c), and integrated diode softness-critical for EMI-sensitive EV power stages.

Technical Context

This IGBT employs TRENCHSTOP™ 5 trench-gate field-stop technology with optimized carrier lifetime control, delivering reduced conduction and switching losses simultaneously. Its dynamic performance is characterized by 19 ns turn-on delay and 165 ns turn-off delay under 400 V/20 A inductive conditions at 25 °C, with tail current suppression enabled by the co-packaged RAPID 1 diode.

The device integrates a monolithic antiparallel diode with 73 ns trr and 0.54 µC Q_rr at 20 A/25 °C, exhibiting soft reverse recovery (−220 A/µs dirr/dt) to minimize voltage overshoot and snubber stress. Thermal design is supported by separate IGBT and diode junction-to-case thermal resistances (0.60 K/W and 1.80 K/W respectively).

Key Specifications

Pinout & Package

AIKW40N65DF5XKSA1 uses the PG-TO247-3 package: insulated plastic case with 3 leads and electrically isolated collector tab (backside). Mounting screw M3, torque ≤0.6 Nm; not suitable for wave soldering beyond 260 °C for 10 s.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT applications.

Compared with IKW40N65ES5XKSA1 and AIKW40N65F5XKSA1, AIKW40N65DF5XKSA1 uniquely combines AEC-Q101 qualification, integrated soft-recovery diode, and best-in-class 1.6 V V_CE(sat), making it the preferred choice for automotive on-board and off-board chargers demanding reliability, integration, and efficiency.

Availability

AIKW40N65DF5XKSA1 is available at Aetrix Electronics and suitable for on-board chargers, DC/DC converters, and power-factor correction circuits requiring stable component supply, automotive-grade qualification, and high-temperature operational integrity.

Supply support for AIKW40N65DF5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in automotive and industrial power electronics.

AIKW40N65DF5XKSA1 belongs to Infineon's TRENCHSTOP™ 5 High-Speed Switching series, engineered specifically for high-frequency, high-efficiency EV power conversion-including onboard/offboard chargers, traction inverters, and industrial SMPS.

FAQ

What is the maximum gate-emitter voltage rating for AIKW40N65DF5XKSA1?

The absolute maximum gate-emitter voltage is ±20 V for continuous operation and ±30 V for transient pulses ≤10 µs with duty cycle <1%. Exceeding ±20 V continuously risks gate oxide degradation; recommended gate drive is 15 V for turn-on and −5 V to −8 V for turn-off to ensure robust noise immunity and safe commutation.

Does AIKW40N65DF5XKSA1 require an external freewheeling diode?

No. AIKW40N65DF5XKSA1 integrates a co-packaged RAPID 1 antiparallel diode optimized for soft reverse recovery (73 ns trr, −220 A/µs dirr/dt). This eliminates the need for an external diode in standard half-bridge or full-bridge configurations, reducing PCB area and parasitic inductance.

How does the thermal resistance differ between the IGBT and diode sections?

The IGBT section has R_th(j–c) = 0.60 K/W, while the diode section has R_th(j–c) = 1.80 K/W-confirmed in Infineon's datasheet Table 3. This asymmetry means the diode heats more rapidly under high IF conditions; thermal design must account for separate junction temperatures or use derating curves for combined operation.

Is AIKW40N65DF5XKSA1 suitable for short-circuit ruggedness testing per IEC 60747-9?

Yes. The device is dynamically stress tested per AEC-Q101 and supports short-circuit withstand time of ≥10 µs at V_CE = 650 V and T_vj = 150 °C. This capability is validated in production screening and documented in Infineon's application note AN2015-04 for short-circuit protection design in automotive inverters.