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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies AIKW40N65DH5XKSA1

Name: AIKW40N65DH5XKSA1
Brand: Infineon Technologies
SKU: AIKW40N65DH5XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AIKW40N65DH5XKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: AIKW40N65DH5XKSA1.pdf

Description:: IC DISCRETE 650V TO247-3

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Product details

Overview

AIKW40N65DH5XKSA1 from Infineon is a 650 V, 40 A high-speed TRENCHSTOP™ 5 IGBT with integrated RAPID 1 antiparallel diode in PG-TO247-3 package, designed for hard-switching and resonant topologies in on-board/off-board EV chargers and DC/DC converters. It delivers 1.66 V V_CE(sat) at 25°C, 92 nC gate charge, and 175°C max junction temperature.

For engineers reviewing the AIKW40N65DH5XKSA1 datasheet, AIKW40N65DH5XKSA1 pinout, AIKW40N65DH5XKSA1 application, or AIKW40N65DH5XKSA1 equivalent, this device supports high-efficiency power conversion in automotive-grade EV charging systems where low switching loss, soft diode recovery, and AEC-Q101 qualification are critical selection criteria.

Technical Context

This IGBT employs TRENCHSTOP™ 5 trench-gate field-stop structure optimized for fast turn-off (153 ns td(off) @ 25°C) and low tail current, paired with a RAPID 1 diode exhibiting 75 ns trr and -217 A/µs dirr/dt at 25°C. Its dynamic performance is characterized under standardized inductive-load conditions (V_CC = 400 V, I_C = 20 A, R_G = 15 Ω).

The device operates across -40°C to +175°C junction range with thermally decoupled IGBT/diode junction-to-case resistances (0.60 K/W and 1.80 K/W respectively), enabling high-power density designs in constrained thermal environments typical of automotive traction and auxiliary power modules.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE Rating	650 V - Supports 400 V DC bus systems with 60 % voltage margin for transient overvoltage handling
I_C Continuous	40 A @ T_C = 25°C - Sustains rated output current in forced-air-cooled charger modules
V_CE(sat)	1.66 V @ I_C = 40 A, T_vj = 25°C - Minimizes conduction loss in high-duty-cycle PFC and DC/DC stages
Q_G	92 nC - Enables fast, low-loss switching with moderate gate drive strength (e.g., 2 A peak)
trr (Diode)	75 ns @ I_F = 20 A - Reduces reverse recovery energy and EMI in synchronous rectification
T_vj(max)	175°C - Allows operation in high-ambient automotive under-hood environments without derating
R_th(j-C) (IGBT)	0.60 K/W - Supports >200 W power dissipation with standard heatsink interface (e.g., 0.1 K/W thermal resistance)

Pinout & Package

AIKW40N65DH5XKSA1 uses the PG-TO247-3 through-hole package with isolated collector tab (backside). The package features a robust copper baseplate for low thermal resistance and mechanical stability in high-vibration automotive applications.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control terminal requiring <±20 V rating; low input capacitance (C_ies = 2300 pF) eases gate driver design
Pin 2 & Backside	Collector	Main high-side power terminal; backside metal tab provides low-inductance, high-current path to heatsink
Pin 3	Emitte	Power return path; internal emitter inductance (L_E = 13 nH) impacts switching waveform fidelity

Key Features

Feature	Design Value
H5 trench-gate IGBT + RAPID 1 diode co-packaging	Enables single-device solution for half-bridge legs with matched thermal and dynamic behavior
AEC-Q101 qualified	Validated for automotive power electronics including on-board chargers and DC/DC converters
Low V_CE(sat) and Q_G	Reduces both conduction and switching losses simultaneously-critical for >95 % efficiency targets
Soft, fast diode recovery (Q_rr = 0.52 µC)	Minimizes voltage overshoot and snubber requirements in high-frequency ZVS/ZCS topologies
175°C maximum junction temperature	Permits smaller heatsinks and higher power density in space-constrained EV subsystems

Applications

On-Board EV Charger

Off-Board EV Charger

Use Scenario: Bidirectional AC/DC and DC/DC conversion in compact vehicle-integrated charging units operating at 10–22 kW.

IC Role / Device Role / Timing Role: Main switching device in interleaved PFC and isolated DC/DC stages; handles 20–100 kHz hard-switched operation.

Use Value: Low Q_G and soft diode reduce gate drive loss and EMI filtering burden, enabling smaller magnetics and passive components.

Use Scenario: High-power modular charging stations delivering up to 150 kW using parallel IGBT half-bridges.

IC Role / Device Role / Timing Role: Primary switching element in three-phase Vienna rectifiers and dual-active-bridge DC/DC converters.

Use Value: 175°C rating and 0.60 K/W R_th(j-C) support high-current density layouts with reduced thermal interface complexity.

Automotive DC/DC Converter

Industrial PFC Module

Use Scenario: 3.3 kW isolated DC/DC stage stepping down 400 V battery to 12/48 V auxiliary supply in BEVs.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier switch and primary-side high-side switch in phase-shifted full-bridge topology.

Use Value: Matched IGBT/diode dynamics ensure balanced commutation and minimize circulating current losses.

Use Scenario: Three-phase active front-end PFC for industrial UPS and motor drives requiring unity power factor and low THD.

IC Role / Device Role / Timing Role: Fast-switching IGBT in boost-leg configuration operating at 16–25 kHz with soft-recovery diode clamping.

Use Value: 75 ns trr and -217 A/µs dirr/dt suppress voltage spikes during diode turn-off, reducing snubber size and cost.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKW40N65ES5	Same 650 V/40 A rating but uses older TRENCHSTOP™ 4 technology; higher V_CE(sat) (1.75 V) and slower switching (E_off ≈ 0.15 mJ vs. 0.12 mJ)	Lacks AEC-Q101 qualification; intended for industrial, not automotive, use	Select when cost sensitivity outweighs efficiency and qualification requirements
FGH40N60UF	600 V rating, lower V_CE(sat) (1.55 V), but no integrated diode; requires external fast diode	Not AEC-Q101 qualified; higher system-level BOM count and layout complexity	Select only if 600 V rating suffices and discrete diode integration is acceptable

Compared with IKW40N65ES5 and FGH40N60UF, AIKW40N65DH5XKSA1 uniquely combines AEC-Q101 compliance, integrated soft-recovery diode, and best-in-class switching efficiency-making it the preferred choice for automotive-grade high-power converters where reliability and system simplification are mandatory.

Availability

AIKW40N65DH5XKSA1 is available at Aetrix Electronics and suitable for on-board chargers, off-board chargers, and automotive DC/DC converters requiring stable component supply, long-term lifecycle support, and traceable automotive-grade sourcing.

Supply support for AIKW40N65DH5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensors for automotive, industrial, and renewable energy markets.

This device belongs to Infineon's TRENCHSTOP™ 5 High Speed Switching series, engineered specifically for high-efficiency, high-frequency power conversion in electric vehicle charging infrastructure and traction auxiliary systems.

FAQ

What is the maximum gate-emitter voltage rating for AIKW40N65DH5XKSA1?

The absolute maximum gate-emitter voltage is ±20 V for continuous operation and ±30 V for transient pulses ≤10 µs (duty cycle <1 %). Exceeding ±20 V continuously risks gate oxide degradation and threshold voltage shift, especially at elevated temperatures. Gate drive circuits must include clamping or zener protection to remain within these limits.

Does AIKW40N65DH5XKSA1 require a negative gate voltage for reliable turn-off?

No, reliable turn-off is achieved with 0 V gate voltage; however, applying -5 V to -10 V improves noise immunity and reduces risk of spurious turn-on in high-dV/dt environments like multi-level inverters. The device's V_GE(th) range (3.2–4.8 V) ensures robust off-state margin even without negative bias under typical board-level noise conditions.

How does the integrated RAPID 1 diode differ from standard FRD counterparts?

The RAPID 1 diode features tailored lifetime control and optimized carrier distribution, yielding soft reverse recovery (low Irrm and dirr/dt) and low Q_rr (0.52 µC @ 25°C). Unlike standard fast recovery diodes, it is electrically and thermally co-optimized with the IGBT die-ensuring matched thermal expansion, consistent switching timing, and minimized parasitic oscillation in half-bridge configurations.

Can AIKW40N65DH5XKSA1 be used in parallel configurations?

Yes-its positive V_CE(sat) temperature coefficient (increasing from 1.66 V at 25°C to 2.05 V at 175°C) enables inherent current sharing in paralleled operation. Successful implementation requires matched gate drive impedance, symmetrical PCB layout, and thermal coupling via shared heatsink; derating to ≤35 A per device is recommended for >100 kHz operation to manage dynamic imbalance.

AIKW40N65DH5XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: Trenchstop™ 5

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 74 A

Current - Collector Pulsed (Icm):: 120 A

Vce(on) (Max) @ Vge, Ic:: 2.1V @ 15V, 40A

Power - Max:: 250 W

Switching Energy:: 350µJ (on), 100µJ (off)

Input Type:: Standard

Gate Charge:: 95 nC

Td (on/off) @ 25°C:: 19ns/165ns

Test Condition:: 400V, 20A, 15Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-41

AIKW40N65DH5XKSA1 FAQ

1.How can I place an order for AIKW40N65DH5XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for AIKW40N65DH5XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AIKW40N65DH5XKSA1 reliable?

The price and inventory of AIKW40N65DH5XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AIKW40N65DH5XKSA1 is usually 5 days.

3.What payment methods are accepted for AIKW40N65DH5XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AIKW40N65DH5XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AIKW40N65DH5XKSA1?

AIKW40N65DH5XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AIKW40N65DH5XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AIKW40N65DH5XKSA1?

For technical support, including AIKW40N65DH5XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AIKW40N65DH5XKSA1 requirements.

6.How does Aetrix verify that AIKW40N65DH5XKSA1 is sourced from the original manufacturer or authorized distributors?

All AIKW40N65DH5XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AIKW40N65DH5XKSA1 meets industry standards.

7.What is the process for return or replacement of AIKW40N65DH5XKSA1?

All AIKW40N65DH5XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with AIKW40N65DH5XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AIKW40N65DH5XKSA1 part is unused and in its original packaging.

Return procedure for AIKW40N65DH5XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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