Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies AIKW50N60CTXKSA1

Part No.:
AIKW50N60CTXKSA1
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-247-3
Datasheet:
AetrixAIKW50N60CTXKSA1.pdf
Description:
IC DISCRETE 600V TO247-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:387

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

AIKW50N60CTXKSA1 from Infineon is an automotive-grade 600 V, 50 A TRENCHSTOP™ IGBT with integrated emitter-controlled diode in a PG-TO247-3 package. It delivers 1.5 V typical VCE(sat) at 25°C, 175°C maximum junction temperature, and 5 µs short-circuit withstand time - enabling high-efficiency, rugged DC/AC inverters for electric vehicle powertrains.

For engineers reviewing the AIKW50N60CTXKSA1 datasheet, AIKW50N60CTXKSA1 pinout, AIKW50N60CTXKSA1 application, or AIKW50N60CTXKSA1 equivalent, key selection criteria include its AEC-Q101 qualification, low EMI profile, soft fast-recovery diode behavior, positive VCE(sat) temperature coefficient, and dynamic test validation across temperature and load conditions.

Technical Context

This IGBT uses TRENCHSTOP™ and Fieldstop technology optimized for 600 V automotive traction and auxiliary power conversion. Its integrated emitter-controlled diode features 143 ns typ. reverse recovery time (25°C) and 4.30 µC Qrr (175°C), minimizing switching losses and voltage overshoot during commutation.

The device exhibits tightly distributed electrical parameters, stable thermal behavior up to 175°C, and gate charge of 310 nC - supporting precise PWM control in high-frequency inverter stages while maintaining robust short-circuit ruggedness under 400 V bus conditions.

Key Specifications

Parameter Value and Actual Design Meaning
VCE 600 V - supports 400 V DC-link systems with 50 % voltage margin for transient overvoltage handling
IC 50 A continuous - rated for sustained motor phase current in 30–40 kW inverter modules
VCE(sat) 1.5 V (typ., 25°C) - reduces conduction loss by ~30 % vs. standard 600 V IGBTs, improving system efficiency
tSC 5 µs - enables reliable desaturation detection and fault shutdown in automotive safety-critical inverters
Rth(j-c) (IGBT) 0.45 K/W - allows 333 W power dissipation at 25°C case temperature, simplifying heatsink sizing
QG 310 nC - compatible with standard 15 V gate drivers; enables <350 ns total switching time with 7 Ω gate resistor
trr (diode) 143 ns (typ., 25°C) - ensures low diode recovery loss and reduced EMI in hard-switched PFC and inverter legs

Pinout & Package

PG-TO247-3 package: isolated metal tab, through-hole mounting, 0.6 Nm max screw torque, wave-solderable (260°C, 10 s). Thermal resistance Rth(j-c) = 0.45 K/W (IGBT), 0.80 K/W (diode).

Pin/Terminal Circuit Role Design Meaning
Collector (C) Main high-side current path Connected to DC-link positive; carries full phase current and must be routed with low-inductance layout
Gate (G) Control input for IGBT channel Requires low-impedance drive (RG = 7 Ω typical); sensitive to dv/dt-induced false turn-on without proper Miller clamp
Emiter (E) Common emitter node for IGBT and antiparallel diode Serves as power ground reference; critical for accurate current sensing and gate driver return path integrity

Key Features

Feature Design Value
AEC-Q101 qualified Validated for automotive powertrain use including temperature cycling, HTRB, and humidity testing per JEDEC standards
Positive VCE(sat) tempco Enables inherent current sharing in parallel configurations without external ballasting resistors
Soft, fast-recovery diode Emitter-controlled structure limits di/dt during reverse recovery, reducing voltage spikes and snubber requirements
100 % short-circuit tested Each unit validated for 5 µs withstand at 150°C junction temperature - no screening escape risk in field operation
Low EMI design Optimized internal layout and controlled switching transitions reduce radiated emissions in 150–300 MHz band

Applications

Main Inverter Climate Compressor

Use Scenario: High-voltage traction inverter converting battery DC to 3-phase AC for permanent magnet synchronous motors in BEVs.

IC Role / Device Role / Timing Role: Primary switching element in 6-pack half-bridge configuration; handles 50 A RMS, 400 V DC-link, 8–16 kHz PWM.

Use Value: 1.5 V VCE(sat) and 3.65 mJ total switching energy (175°C) directly enable >97 % inverter efficiency at rated load.

Use Scenario: Variable-speed compressor drive in EV thermal management systems operating at 20–40 kW.

IC Role / Device Role / Timing Role: Inverter leg switch controlling refrigerant flow rate via motor speed modulation; operates at 10–12 kHz with burst-mode capability.

Use Value: AEC-Q101 qualification and 175°C rating ensure reliability across -40°C cold start to +105°C under-hood ambient conditions.

PTC Heater Control Onboard Charger Inverter Stage

Use Scenario: Solid-state switching of high-power PTC (Positive Temperature Coefficient) heating elements for cabin and battery preconditioning.

IC Role / Device Role / Timing Role: Direct DC-link switch enabling on/off and phase-angle control; handles 50–80 A pulsed current with minimal thermal stress.

Use Value: 5 µs short-circuit withstand and 100 % dynamic testing guarantee fail-safe interruption during heater element fault events.

Use Scenario: Active rectification and DC-link regulation stage in bidirectional OBC (Onboard Charger) for 6.6 kW AC/DC + DC/AC operation.

IC Role / Device Role / Timing Role: High-side switch in totem-pole PFC and inverter bridge; subjected to hard commutation and reverse recovery stress.

Use Value: Integrated soft-recovery diode eliminates need for discrete SiC Schottky anti-parallel devices, reducing BOM count and layout area.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT-in-DuoPack applications.

Alternative Part Technical Difference Application Difference Selection Advice
IKW50N60T No AEC-Q101 qualification; identical electrical specs but industrial-grade screening only Not approved for ASIL-B/C automotive systems; suitable for industrial motor drives and UPS Select when automotive qualification is not required and cost sensitivity outweighs functional safety compliance
AIKW40N60CT Lower 40 A rating; same VCE(sat), tSC, and package; 20 % lower conduction loss at partial load Better suited for 25–30 kW inverters where peak current rarely exceeds 40 A Choose for thermally constrained designs where derating headroom and lower QG (270 nC) improve gate drive efficiency

Compared with IKW50N60T and AIKW40N60CT, AIKW50N60CTXKSA1 uniquely combines AEC-Q101 compliance, 50 A continuous rating, and integrated diode softness - making it the only option qualified for safety-critical main inverter use in production BEVs without design revalidation.

Availability

AIKW50N60CTXKSA1 is available at Aetrix Electronics and suitable for main inverter systems, climate compressor drives, and PTC heater controls requiring stable component supply in automotive OEM and Tier-1 production programs.

Supply support for AIKW50N60CTXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power electronics, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.

This part belongs to the TRENCHSTOP™ Low Loss DuoPack product line, engineered specifically for high-reliability, high-efficiency traction and auxiliary inverters in electric vehicles - balancing conduction loss, switching speed, and ruggedness under harsh thermal and electrical stress.

FAQ

What is the maximum allowable gate-emitter voltage for AIKW50N60CTXKSA1?

The absolute maximum gate-emitter voltage is ±20 V, with recommended operating range of –10 V to +15 V. Exceeding +15 V risks accelerated gate oxide degradation, while negative bias below –10 V may cause unintended turn-off due to Miller-induced voltage spikes during high dv/dt switching events.

Does AIKW50N60CTXKSA1 require a negative gate drive voltage?

No, it does not require negative gate drive. The device is fully functional with 0 V / +15 V gate drive, but a –5 V to –10 V negative bias improves noise immunity and prevents false turn-on during high-speed switching in noisy automotive environments, especially in parallel configurations.

How is the "DuoPack" configuration implemented internally?

The DuoPack integrates one TRENCHSTOP™ IGBT and one emitter-controlled diode in a single PG-TO247-3 package with shared emitter terminal. The diode is co-packaged but electrically independent - no monolithic integration - enabling optimized die sizing and thermal coupling while retaining separate device characterization.

Can AIKW50N60CTXKSA1 replace older AIKW50N60CT variants?

Yes - AIKW50N60CTXKSA1 is a direct replacement for AIKW50N60CT with identical pinout, ratings, and performance. The "XKSA1" suffix denotes Infineon's standardized automotive packaging and traceability format (including lot-level AEC-Q101 test records), with no electrical or thermal differences from prior revisions.

AIKW50N60CTXKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
TrenchStop™
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Active
IGBT Type:
Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):
600 V
Current - Collector (Ic) (Max):
80 A
Current - Collector Pulsed (Icm):
150 A
Vce(on) (Max) @ Vge, Ic:
2V @ 15V, 50A
Power - Max:
333 W
Switching Energy:
1.2mJ (on), 1.4mJ (off)
Input Type:
Standard
Gate Charge:
310 nC
Td (on/off) @ 25°C:
26ns/299ns
Test Condition:
400V, 50A, 7Ohm, 15V
Reverse Recovery Time (trr):
-
Operating Temperature:
-40°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO247-3-41

AIKW50N60CTXKSA1 FAQ

1.How can I place an order for AIKW50N60CTXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for AIKW50N60CTXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AIKW50N60CTXKSA1 reliable?

The price and inventory of AIKW50N60CTXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AIKW50N60CTXKSA1 is usually 5 days.

3.What payment methods are accepted for AIKW50N60CTXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AIKW50N60CTXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AIKW50N60CTXKSA1?

AIKW50N60CTXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AIKW50N60CTXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AIKW50N60CTXKSA1?

For technical support, including AIKW50N60CTXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AIKW50N60CTXKSA1 requirements.

6.How does Aetrix verify that AIKW50N60CTXKSA1 is sourced from the original manufacturer or authorized distributors?

All AIKW50N60CTXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AIKW50N60CTXKSA1 meets industry standards.

7.What is the process for return or replacement of AIKW50N60CTXKSA1?

All AIKW50N60CTXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with AIKW50N60CTXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AIKW50N60CTXKSA1 part is unused and in its original packaging.

Return procedure for AIKW50N60CTXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

AIKW50N60CTXKSA1 Tags

  • AIKW50N60CTXKSA1
  • AIKW50N60CTXKSA1 PDF
  • AIKW50N60CTXKSA1 Datasheet
  • AIKW50N60CTXKSA1 Specifications
  • AIKW50N60CTXKSA1 Images
  • Infineon Technologies
  • Infineon Technologies AIKW50N60CTXKSA1
  • Buy AIKW50N60CTXKSA1
  • AIKW50N60CTXKSA1 Price
  • AIKW50N60CTXKSA1 Distributor
  • AIKW50N60CTXKSA1 Supplier
  • AIKW50N60CTXKSA1 Wholesale
Related Products
STGD3NB60SDT4
STGD3NB60SDT4

STMicroelectronics

HGTD1N120BNS9A
HGTD1N120BNS9A

onsemi

STGF7NB60SL
STGF7NB60SL

STMicroelectronics

FGD5T120SH
FGD5T120SH

onsemi

STGB3NC120HDT4
STGB3NC120HDT4

STMicroelectronics

IKP20N60TXKSA1
IKP20N60TXKSA1

Infineon Technologies

STGW30H60DFB
STGW30H60DFB

STMicroelectronics

STGB30M65DF2
STGB30M65DF2

STMicroelectronics

IKB20N60TATMA1
IKB20N60TATMA1

Infineon Technologies

STGB30V60DF
STGB30V60DF

STMicroelectronics

IKW30N60DTPXKSA1
IKW30N60DTPXKSA1

Infineon Technologies

ISL9V3040P3
ISL9V3040P3

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER