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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies AIKW50N65DH5XKSA1

Name: AIKW50N65DH5XKSA1
Brand: Infineon Technologies
SKU: AIKW50N65DH5XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AIKW50N65DH5XKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: AIKW50N65DH5XKSA1.pdf

Description:: IC DISCRETE 650V TO247-3

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Product details

Overview

AIKW50N65DH5XKSA1 from Infineon is a 650 V, 50 A high-speed TRENCHSTOP™ 5 IGBT with integrated RAPID 1 antiparallel diode in PG-TO247-3 package. It delivers 1.66 V V_CE(sat) at 25°C, 116 nC gate charge, and 175°C maximum junction temperature. Designed for hard-switching and resonant topologies in on-board chargers and DC/DC converters.

For engineers reviewing the AIKW50N65DH5XKSA1 datasheet, AIKW50N65DH5XKSA1 pinout, AIKW50N65DH5XKSA1 application, or AIKW50N65DH5XKSA1 equivalent, key selection criteria include dynamic switching energy (0.14–0.85 mJ), soft reverse recovery (Q_rr = 0.26–1.03 µC), thermal resistance (R_th(j-C) = 0.55 K/W), AEC-Q101 qualification, and copackaged diode performance.

Technical Context

This IGBT employs TRENCHSTOP™ 5 trench-gate field-stop technology with optimized carrier lifetime control to achieve low conduction loss and fast, soft switching. Its integrated RAPID 1 diode features low Q_rr, controlled dI_rr/dt, and minimal voltage overshoot during turn-off commutation.

The device operates across –40°C to +175°C junction range, supports 15 V gate drive, and is dynamically stress tested per AEC-Q101. Gate threshold voltage (V_GE(th) = 3.2–4.8 V) ensures robust noise immunity, while low C_ies (3050 pF) enables high-frequency PWM control up to 100 kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	650 V - Withstands DC bus voltages up to 650 V in EV traction inverters and industrial PFC stages.
I_C	50 A continuous - Rated collector current at T_C = 25°C; derates to 53.5 A at T_C = 100°C for thermal design margin.
V_CE(sat)	1.66 V @ 25°C - Low saturation voltage reduces conduction losses in high-current switching nodes.
Q_G	116 nC - Enables efficient gate driving with moderate gate resistor values (e.g., 12 Ω) for balanced E_on/E_off.
t_d(off)	173 ns @ 25°C - Short turn-off delay supports high-frequency operation while maintaining safe SOA margins.
trr / Q_rr	58 ns / 0.57 µC @ 25°C - Fast, soft diode recovery minimizes voltage spikes and EMI in bidirectional power stages.
R_th(j-C)	0.55 K/W - Low junction-to-case thermal resistance allows direct mounting to heatsinks without thermal interface degradation.

Pinout & Package

Package: PG-TO247-3 (plastic TO-247 with 3-pin single-in-line configuration, isolated collector tab).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control terminal for MOS-controlled IGBT switching; requires 15 V nominal drive with ±20 V absolute max rating.
Pin 2 & Backside	Collector	Main high-side power terminal; backside metal tab provides low-inductance, high-current path to heatsink and system ground plane.
Pin 3	Emitte	Emitter output node; referenced to gate drive return; internal emitter inductance is 13 nH (measured 5 mm from case).

Key Features

Feature	Design Value
High-speed H5 IGBT die	Optimized for <100 kHz hard switching with 0.14 mJ total switching energy at 6 A, reducing thermal stress in compact converters.
RAPID 1 antiparallel diode	Soft reverse recovery (dI_rr/dt = –1380 A/µs @ 6 A) suppresses voltage ringing and snubber losses in bidirectional LLC and phase-shifted full-bridge topologies.
AEC-Q101 qualified	Validated for automotive-grade reliability including HTGB, HTRB, and temperature cycling-enabling use in OBC and DC/DC modules without requalification.
175°C maximum junction temperature	Enables higher power density designs by allowing smaller heatsinks and tighter thermal margins in space-constrained EV power electronics.
Green RoHS-compliant package	Pb-free, halogen-free PG-TO247-3 housing meets automotive environmental compliance requirements and simplifies end-of-life recycling.

Applications

On-Board Charger (OBC)

DC/DC Converter

Use Scenario: Bidirectional AC/DC and DC/DC conversion in 3.3–22 kW EV on-board chargers.

IC Role / Device Role / Timing Role: Main switching device in interleaved totem-pole PFC and isolated dual-active-bridge (DAB) stages.

Use Value: Low V_CE(sat) and soft diode recovery reduce conduction and switching losses, enabling >96% peak efficiency at full load.

Use Scenario: High-efficiency 400 V to 12/48 V isolation in vehicle auxiliary power units.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology operating at 100 kHz.

Use Value: 116 nC Q_G and 173 ns t_d(off) support precise dead-time control and minimize circulating current losses.

Off-Board Charger

Power Factor Correction

Use Scenario: Modular multi-kW charging stations with active front-end rectifiers and DC link regulation.

IC Role / Device Role / Timing Role: Switching element in three-phase Vienna rectifier or NPC inverter stage.

Use Value: 650 V rating and 150 A pulsed current capability handle transient overloads and regenerative braking energy.

Use Scenario: Single- or three-phase boost PFC in industrial UPS and telecom rectifiers.

IC Role / Device Role / Timing Role: High-frequency switching device in continuous conduction mode (CCM) boost converter.

Use Value: Low E_ts (0.61 mJ @ 25 A) and stable V_CE(sat) over temperature ensure consistent THD and efficiency across ambient conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKW50N65ES5	Same 650 V/50 A rating but uses older TRENCHSTOP™ 4 process; higher V_CE(sat) (1.75 V) and Q_rr (0.72 µC); no AEC-Q101 qualification.	Limited to industrial PFC and non-automotive DC/DC where qualification and soft recovery are not required.	Select when cost sensitivity outweighs efficiency and automotive compliance needs.
IGW50N65F5	Fifth-generation device with field-stop II+ structure; lower Q_G (95 nC) but higher V_CE(sat) (1.85 V); same RAPID 1 diode; AEC-Q101 qualified.	Better suited for ultra-high-frequency (>150 kHz) resonant converters where gate drive loss dominates.	Prefer when minimizing gate drive power is critical and slightly higher conduction loss is acceptable.

Compared with IKW50N65ES5 and IGW50N65F5, AIKW50N65DH5XKSA1 offers the best balance of low conduction loss, soft diode recovery, and automotive qualification-making it optimal for thermally constrained, safety-critical OBC and DAB applications.

Availability

AIKW50N65DH5XKSA1 is available at Aetrix Electronics and suitable for on-board chargers, DC/DC converters, and power-factor correction circuits requiring stable component supply, automotive-grade reliability, and high-temperature operation.

Supply support for AIKW50N65DH5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.

AIKW50N65DH5XKSA1 belongs to Infineon's TRENCHSTOP™ 5 high-speed IGBT product line, engineered specifically for high-efficiency, high-power-density EV power electronics including on-board and off-board charging systems.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies RG(on) = RG(off) = 12 Ω for standard test conditions. For 50 A operation at 100 kHz, a 10–15 Ω gate resistor balances switching speed and voltage overshoot. Higher values (>22 Ω) increase E_on/E_off and risk thermal runaway under high di/dt; lower values (<5 Ω) require careful layout to avoid gate oscillation.

Is AIKW50N65DH5XKSA1 suitable for zero-voltage switching (ZVS) topologies?

Yes-the low C_oes (69 pF), soft RAPID 1 diode recovery (trr ≤ 85 ns), and controlled tail current enable reliable ZVS in LLC and phase-shifted full-bridge converters. Its 175°C rating supports sustained operation during ZVS transitions where junction temperature can spike rapidly.

How does the integrated RAPID 1 diode differ from standard FRDs?

The RAPID 1 diode features tailored carrier lifetime control and optimized doping profile to deliver lower Q_rr (0.26–1.03 µC), reduced dI_rr/dt (–1380 to –362 A/µs), and negligible reverse recovery snap-off. This minimizes voltage overshoot and EMI compared to standard fast recovery diodes, especially under high diF/dt conditions.

Can this IGBT be used in parallel configurations?

Yes-its positive V_CE(sat) temperature coefficient (1.91 V @ 125°C, 2.04 V @ 175°C) enables natural current sharing. Successful paralleling requires matched gate drive impedance, symmetrical PCB layout, and thermal coupling via shared heatsink. Derating to 40 A per device is recommended for long-term reliability.

AIKW50N65DH5XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: Trenchstop™ 5

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: -

Current - Collector Pulsed (Icm):: 150 A

Vce(on) (Max) @ Vge, Ic:: 2.1V @ 15V, 50A

Power - Max:: 270 W

Switching Energy:: 490µJ (on), 140µJ (off)

Input Type:: Standard

Gate Charge:: 1018 nC

Td (on/off) @ 25°C:: 21ns/156ns

Test Condition:: 400V, 25A, 12Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-41

AIKW50N65DH5XKSA1 FAQ

1.How can I place an order for AIKW50N65DH5XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for AIKW50N65DH5XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AIKW50N65DH5XKSA1 reliable?

The price and inventory of AIKW50N65DH5XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AIKW50N65DH5XKSA1 is usually 5 days.

3.What payment methods are accepted for AIKW50N65DH5XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AIKW50N65DH5XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AIKW50N65DH5XKSA1?

AIKW50N65DH5XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AIKW50N65DH5XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AIKW50N65DH5XKSA1?

For technical support, including AIKW50N65DH5XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AIKW50N65DH5XKSA1 requirements.

6.How does Aetrix verify that AIKW50N65DH5XKSA1 is sourced from the original manufacturer or authorized distributors?

All AIKW50N65DH5XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AIKW50N65DH5XKSA1 meets industry standards.

7.What is the process for return or replacement of AIKW50N65DH5XKSA1?

All AIKW50N65DH5XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with AIKW50N65DH5XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AIKW50N65DH5XKSA1 part is unused and in its original packaging.

Return procedure for AIKW50N65DH5XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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