Infineon Technologies AIKW50N65RF5XKSA1

Overview

AIKW50N65RF5 from Infineon is a 650V, 50A automotive-qualified CoolSiC™ Hybrid Discrete integrating a TRENCHSTOP™ 5 fast-switching IGBT and a CoolSiC™ Schottky Diode G5 in a single PG-TO247-3 package. It delivers 1.6V V_CE(sat) at 25°C, 109 nC gate charge, and 175°C maximum junction temperature. Used in on-board chargers and DC/DC converters for EV powertrains.

For engineers reviewing the AIKW50N65RF5 datasheet, AIKW50N65RF5 pinout, AIKW50N65RF5 application, or AIKW50N65RF5 equivalent, key selection criteria include hard-switching efficiency at 650V, AEC-Q101 qualification, thermal resistance (R_th(j-c) = 0.45–0.60 K/W for IGBT), low Q_rr (0.03 µC), and gate drive compatibility with 15 V logic.

Technical Context

This hybrid discrete combines an IGBT optimized for low conduction loss and fast turn-off (t_d(off) = 156 ns @ 25°C) with a SiC Schottky diode exhibiting zero reverse recovery (Q_rr = capacitive only). The integrated structure eliminates external anti-parallel diode layout complexity while maintaining independent gate control.

It operates under strict automotive thermal constraints: rated for continuous operation up to 175°C junction temperature, with case temperature derating defined by P_tot = 250 W @ T_c = 25°C and 125 W @ T_c = 100°C. Gate threshold voltage (V_GE(th) = 3.2–4.8 V) ensures robust noise immunity across temperature.

Key Specifications

Pinout & Package

Package: PG-TO247-3, isolated tab (collector connected to backside), thermally enhanced plastic housing with M3 mounting screw capability (0.6 Nm torque).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar hybrid IGBT + SiC diode applications.

Compared with STGW40H65DFB-4 and IXYN50N65C3, AIKW50N65RF5 offers superior current density (50 A in TO247), lowest V_CE(sat), and true monolithic hybrid integration-reducing bill-of-materials count, layout risk, and thermal interface layers in space-constrained automotive modules.

Availability

AIKW50N65RF5 is available at Aetrix Electronics and suitable for on-board chargers, high-voltage DC/DC converters, and auxiliary power modules requiring stable component supply, AEC-Q101 compliance, and 175°C junction operation.

Supply support for AIKW50N65RF5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.

AIKW50N65RF5 belongs to Infineon's CoolSiC™ Hybrid Discrete product line, engineered specifically to replace legacy silicon IGBT + FRD combinations in automotive traction and charging systems with higher efficiency, lower EMI, and simplified thermal design.

FAQ

What is the recommended gate resistor value for AIKW50N65RF5 in a 100 kHz OBC application?

For 100 kHz operation in an on-board charger, a 12 Ω gate resistor is validated in the datasheet for balanced switching speed and EMI performance. At T_vj = 150°C, this yields t_d(off) ≈ 191 ns and E_off = 0.19 mJ. Lower values (e.g., 8 Ω) increase dV/dt and EMI risk; higher values (>15 Ω) raise switching losses disproportionately.

Can AIKW50N65RF5 be used in unidirectional DC/DC converters without reverse conduction requirements?

Yes. The integrated CoolSiC™ Schottky diode remains functional but may be unused in unidirectional topologies like buck or forward converters. Its zero-recovery behavior still suppresses voltage overshoot during turn-off, improving reliability even when not conducting reverse current.

Is the backside collector electrically isolated from the package mount surface?

No. Pin 2 and the backside metal tab are internally connected to the collector. The PG-TO247-3 package uses an isolated tab design, meaning the collector is not shorted to the heatsink unless explicitly bonded via conductive thermal interface material. Electrical isolation must be maintained through non-conductive TIM or insulating washer.

Does AIKW50N65RF5 require negative gate voltage for reliable turn-off in automotive environments?

No. The device is characterized for 0 V / +15 V gate drive. Negative voltage is not required due to its 4.0 V typical V_GE(th) and low IGES (<100 nA), which provide sufficient noise margin. However, –5 V can be applied to further suppress spurious turn-on in high-dV/dt environments like traction inverters.