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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies AIMBG75R016M1HXTMA1

Name: AIMBG75R016M1HXTMA1
Brand: Infineon Technologies
SKU: AIMBG75R016M1HXTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AIMBG75R016M1HXTMA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: -

Datasheet:: AIMBG75R016M1HXTMA1.pdf

Description:: IGBT

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Product details

Overview

AIMBG75R016M1HXTMA1 from Infineon is a 750 V, 16 mΩ silicon carbide (SiC) MOSFET in PG-TO263-7 package with driver source pin, rated for 332 A peak drain current and qualified to AEC-Q101 for automotive on-board chargers and HV-LV DC-DC converters operating in hard- and soft-switching topologies.

For engineers reviewing the AIMBG75R016M1HXTMA1 datasheet, AIMBG75R016M1HXTMA1 pinout, AIMBG75R016M1HXTMA1 application, or AIMBG75R016M1HXTMA1 equivalent, key selection criteria include R_DS(on) × Q_fr performance, dv/dt ruggedness (200 V/ns), gate threshold voltage (4.3 V typ), thermal resistance (0.39 °C/W), and driver source pin isolation for robust unipolar gate driving.

Technical Context

This CoolSiC™ G1 device uses Infineon's proprietary die attach technology and features an internal body diode with 3.9 V forward voltage at 41.5 A. Its low Cr_ss/C_iss ratio (17/2869 pF) and high V_GS(th) (4.3 V typ) suppress parasitic turn-on under high dv/dt conditions.

The MOSFET delivers 29.2 µJ E_oss at 500 V and 81 nC total gate charge, enabling high-frequency switching in bidirectional OBCs and isolated DC-DC stages while maintaining <175 °C maximum junction temperature and 0.39 °C/W junction-to-case thermal resistance.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	750 V - Withstands full automotive 800 V bus systems with margin; validated over −55 °C to +175 °C junction range.
R_DS(on), typ	16 mΩ @ 18 V_GS, 41.5 A, 25 °C - Enables low conduction loss in 11 kW+ OBC half-bridges.
Q_G, typ	81 nC - Supports efficient gate drive design with standard 1.8 Ω external resistor and 18 V gate supply.
E_oss, typ @ 500 V	29.2 µJ - Reduces turn-off energy loss in ZVS/ZCS resonant converters.
dv/dt ruggedness	200 V/ns - Ensures reliable operation without false triggering in high-di/dt motor drive or PFC stages.
R_th(j-c)	0.39 °C/W - Allows direct heatsink mounting for compact, high-power-density automotive power modules.
I_DM, max	332 A - Supports short-circuit withstand capability required for AEC-Q101-compliant traction auxiliary systems.

Pinout & Package

Package: PG-TO263-7 (D²PAK-7) with exposed drain tab for thermal and electrical connection; includes dedicated driver source pin (Pin 2) electrically isolated from power source pins (3–7) to minimize common-source inductance.

Pin/Terminal	Circuit Role	Design Meaning
Drain Tab	Power Drain / Heat Sink Interface	Primary current path and thermal conduction surface; must be soldered to PCB copper pour or heatsink.
Gate (Pin 1)	Control Input	Standard MOSFET gate terminal; requires 0–18 V drive with ≤25 V transient rating.
Power Source (Pin 3–7)	Main Source Return Path	Parallel-connected source terminals carrying full load current; not interchangeable with driver source.
Driver Source (Pin 2)	Gate Loop Reference	Isolated source node for gate driver return path; eliminates source inductance impact on switching waveform fidelity.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees single-pulse E_AS = 425 mJ at 15.9 A, enabling robust fault handling in unregulated bus conditions.
Low R_DS(on) × Q_fr	Optimizes trade-off between conduction loss and reverse recovery loss in bidirectional AC/DC and DC/DC stages.
High V_GS(th) (4.3 V typ)	Reduces risk of unintended turn-on during high-noise transients in 400–800 V battery systems.
Driver source pin	Enables Kelvin-source gate control for precise timing and reduced overshoot in >100 kHz switching applications.
AEC-Q101 qualified	Validated for automotive-grade reliability including temperature cycling, humidity, and mechanical shock per JESD47.

Applications

On-Board Charger (OBC) Half-Bridge

HV-LV DC-DC Converter Primary Side

Use Scenario: 11 kW bi-directional OBC using interleaved hard-switching half-bridges in 400–800 V battery architectures.

IC Role / Device Role / Timing Role: High-side SiC MOSFET switch in dual-phase totem-pole PFC and DC-DC inversion stage.

Use Value: 16 mΩ R_DS(on) and 29.2 µJ E_oss enable >97% system efficiency at 100 kHz switching frequency.

Use Scenario: Isolated 3.3 kW DC-DC converter stepping down 800 V battery to 48 V auxiliary rail in BEV platforms.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology with ZVS operation.

Use Value: 200 V/ns dv/dt ruggedness and low Cr_ss ensure stable zero-voltage switching across full load and temperature range.

Automotive Traction Inverter Auxiliary Stage

Industrial EV Charging Station Power Stack

Use Scenario: 6.6 kW auxiliary inverter supplying HVAC and steering systems from main traction battery.

IC Role / Device Role / Timing Role: Low-inductance switching element in 3-level NPC configuration with active neutral-point clamping.

Use Value: Driver source pin (Pin 2) enables clean gate waveforms despite >500 A/µs di/dt, reducing EMI filter burden.

Use Scenario: Modular 150 kW+ charging station power stack using parallel SiC half-bridge modules.

IC Role / Device Role / Timing Role: Scalable high-current switch in paralleled configurations with matched dynamic characteristics.

Use Value: Tight R_DS(on) distribution (15–22 mΩ) and 332 A peak current rating support current sharing across ≥8 devices.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 750 V SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW75N65DF6AG	650 V silicon IGBT; higher V_CE(sat) (1.6 V), slower switching (t_f ≈ 120 ns), no driver source pin.	Lower cost for <50 kHz applications where efficiency is secondary to BOM simplicity.	Select only if system operates below 500 V bus and thermal budget allows >2× conduction loss.
WOLFSPEED C3M0065090D	900 V SiC MOSFET; 65 mΩ R_DS(on), no driver source pin, higher Q_G (105 nC), same PG-TO263-7 footprint.	Suitable for ultra-high-reliability 900 V systems but sacrifices conduction efficiency in 750 V designs.	Prefer when future-proofing for 900 V architecture or when lower gate charge sensitivity is required.

Compared with STW75N65DF6AG and C3M0065090D, AIMBG75R016M1HXTMA1 uniquely balances 750 V rating, 16 mΩ conduction, driver-source isolation, and AEC-Q101 qualification-making it optimal for production automotive OBCs and DC-DC converters requiring both efficiency and functional safety compliance.

Availability

AIMBG75R016M1HXTMA1 is available at Aetrix Electronics and suitable for on-board chargers, HV-LV DC-DC converters, and traction auxiliary inverters requiring stable component supply, automotive-grade traceability, and long-term lifecycle support.

Supply support for AIMBG75R016M1HXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions for automotive, industrial, and renewable energy markets.

This device belongs to Infineon's CoolSiC™ G1 automotive SiC MOSFET product line, engineered specifically for high-efficiency, high-reliability traction and charging systems operating up to 175 °C junction temperature.

FAQ

Can AIMBG75R016M1HXTMA1 be used in linear mode operation?

No. The datasheet explicitly states "Linear mode operation is not recommended." This device is optimized for switching applications only. Operating in the linear region risks exceeding safe SOA limits, causing localized thermal runaway and premature failure. For any quasi-linear use case, contact Infineon technical support before design-in.

What is the purpose of the driver source pin (Pin 2), and why can't it be swapped with power source pins?

Pin 2 provides a dedicated Kelvin connection for the gate driver return path, eliminating the voltage drop across source inductance during fast switching. Swapping it with Pins 3–7 introduces common-source inductance into the gate loop, causing oscillation, delayed turn-off, and potential shoot-through-verified by Infineon's layout guidelines and test circuits.

How does the 200 V/ns dv/dt ruggedness translate to real-world layout requirements?

This rating means the device maintains stable blocking state under 200 V/ns voltage transients without false turn-on. To achieve this, PCB layout must minimize gate loop area, use tight gate-source routing, avoid shared ground paths, and maintain ≥2 mm creepage between gate and drain traces-per Infineon Application Note AN2018-09.

Is the internal body diode suitable for freewheeling in synchronous rectification?

Yes-the integrated SiC body diode has 3.9 V forward voltage at 41.5 A and 28 ns forward recovery time at 1000 A/µs di/dt. It supports synchronous rectification in ZVS DC-DC converters, though its Q_fr (179–357 nC) is higher than discrete SiC Schottky alternatives, making it best suited for moderate-frequency (<200 kHz) applications.

AIMBG75R016M1HXTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: -

Packaging:: Tape & Reel (TR)

Product Status:: Active

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: -

Current - Collector (Ic) (Max):: -

Current - Collector Pulsed (Icm):: -

Vce(on) (Max) @ Vge, Ic:: -

Power - Max:: -

Switching Energy:: -

Input Type:: -

Gate Charge:: -

Td (on/off) @ 25°C:: -

Test Condition:: -

Reverse Recovery Time (trr):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

AIMBG75R016M1HXTMA1 FAQ

1.How can I place an order for AIMBG75R016M1HXTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for AIMBG75R016M1HXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AIMBG75R016M1HXTMA1 reliable?

The price and inventory of AIMBG75R016M1HXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AIMBG75R016M1HXTMA1 is usually 5 days.

3.What payment methods are accepted for AIMBG75R016M1HXTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AIMBG75R016M1HXTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AIMBG75R016M1HXTMA1?

AIMBG75R016M1HXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AIMBG75R016M1HXTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AIMBG75R016M1HXTMA1?

For technical support, including AIMBG75R016M1HXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AIMBG75R016M1HXTMA1 requirements.

6.How does Aetrix verify that AIMBG75R016M1HXTMA1 is sourced from the original manufacturer or authorized distributors?

All AIMBG75R016M1HXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AIMBG75R016M1HXTMA1 meets industry standards.

7.What is the process for return or replacement of AIMBG75R016M1HXTMA1?

All AIMBG75R016M1HXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with AIMBG75R016M1HXTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AIMBG75R016M1HXTMA1 part is unused and in its original packaging.

Return procedure for AIMBG75R016M1HXTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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