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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies AIMBG75R040M1HXTMA1

Name: AIMBG75R040M1HXTMA1
Brand: Infineon Technologies
SKU: AIMBG75R040M1HXTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AIMBG75R040M1HXTMA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: -

Datasheet:: AIMBG75R040M1HXTMA1.pdf

Description:: IGBT

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Product details

Overview

AIMBG75R040M1HXTMA1 from Infineon is a 750 V, 40 mΩ silicon carbide (SiC) MOSFET in PG-TO263-7 package with driver source pin, rated for 134 A peak drain current and qualified to AEC-Q101. It integrates an internal body diode and delivers best-in-class R_DS(on) × Q_fr, low C_rss/C_iss, and high V_GS(th) for robust unipolar gate driving. Used in hard-switching half-bridges and soft-switching topologies within automotive on-board chargers and HV-LV DC-DC converters.

For engineers reviewing the AIMBG75R040M1HXTMA1 datasheet, AIMBG75R040M1HXTMA1 pinout, AIMBG75R040M1HXTMA1 application, or AIMBG75R040M1HXTMA1 equivalent, key selection criteria include avalanche ruggedness (170 mJ), thermal resistance (0.71 °C/W), gate charge (34 nC), reverse recovery performance (Q_fr = 75–115 nC), and AEC-Q101 qualification for automotive power conversion systems.

Technical Context

This CoolSiC™ G1 device leverages wide-bandgap SiC to achieve 750 V blocking capability with low conduction loss (R_DS(on) = 40 mΩ typ at 25 °C) and superior switching efficiency. Its 7-pin TO263 package separates driver source (Pin 2) from power source (Pins 3–7), enabling Kelvin-source sensing for precise gate control and minimizing parasitic turn-on risk.

The MOSFET features a high gate threshold voltage (V_GS(th) = 3.5–5.6 V), low reverse transfer capacitance (C_rss = 7.2 pF), and optimized output charge (Q_oss = 68 nC @ 500 V), supporting high-frequency operation in resonant and phase-shifted full-bridge topologies while maintaining dv/dt ruggedness up to 200 V/ns.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	750 V - Enables direct use in 800 V battery systems with 20% derating margin.
R_DS(on), typ	40 mΩ @ 25 °C - Delivers low conduction loss in high-current automotive DC-DC stages.
Q_G, typ	34 nC - Supports efficient gate driving with standard 18 V logic-level controllers.
E_oss, typ @ 500 V	12.2 µJ - Reduces turn-off energy loss in hard-switching applications above 400 V bus.
Q_fr, typ	75 nC @ 1000 A/µs - Minimizes reverse recovery losses in bidirectional OBC bridge legs.
R_th(j-c)	0.71 °C/W - Enables high-power density thermal design with direct heatsink mounting via drain tab.
Avalanche Energy	170 mJ - Confirmed single-pulse ruggedness supports fault-tolerant operation in transient overvoltage events.

Pinout & Package

Package: PG-TO263-7 (D²PAK-7) with isolated drain tab for direct thermal coupling to heatsink; includes dedicated driver source (Kelvin source) pin for accurate gate control.

Pin/Terminal	Circuit Role	Design Meaning
Drain Tab	Power Drain / Thermal Interface	Primary current path and main thermal conduction path to heatsink; electrically connected to Pin 1.
Pin 1	Drain	Main drain terminal; shares metallurgical connection with drain tab.
Pin 2	Driver Source (Kelvin Source)	Reference node for gate driver feedback loop; eliminates source inductance impact on switching waveform fidelity.
Pins 3–7	Power Source	Parallel-connected source terminals carrying high-current return path; must not be interchanged with Pin 2.
Gate	Control Input	Standard MOSFET gate terminal; requires 0–18 V drive with recommended V_GS(on) = 18 V and V_GS(off) = 0 V.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees robustness under repetitive unclamped inductive switching stress up to 170 mJ.
Low C_rss/C_iss ratio	7.2 pF / 1135 pF = 0.0063 - Suppresses Miller-induced false turn-on during high dv/dt transitions.
High V_GS(th)	4.3 V typical - Improves noise immunity and enables stable operation with unipolar gate drivers.
Infineon die attach technology	Enhances thermal cycling reliability and reduces interfacial thermal resistance between SiC die and leadframe.
Driver source pin (Pin 2)	Enables true Kelvin-source gate control, eliminating source inductance effects on switching timing and loss.

Applications

On-Board Charger (OBC) Half-Bridge

HV-LV DC-DC Converter Primary Side

Use Scenario: 11 kW bi-directional OBC operating in hard-switched LLC or dual-active-bridge topology with 800 V battery interface.

IC Role / Device Role / Timing Role: High-side and low-side switching element in primary bridge leg; handles 134 A peak current and 500–750 V blocking.

Use Value: Low Q_oss and Q_fr reduce switching losses by >25% vs. comparable Si MOSFETs, enabling higher frequency operation without thermal penalty.

Use Scenario: 3.3 kW isolated DC-DC stage converting 800 V battery to 48 V auxiliary supply in BEV power architecture.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge; operates at 100–200 kHz with zero-voltage switching assist.

Use Value: High dv/dt ruggedness (200 V/ns) and low Crss ensure reliable ZVS initiation and reduced EMI generation across temperature range.

Automotive Traction Inverter Auxiliary Stage

48 V Mild-Hybrid Boost Converter

Use Scenario: Auxiliary power module supplying gate drivers and control logic for main traction inverter using 750 V bus.

IC Role / Device Role / Timing Role: High-efficiency synchronous rectifier or active clamp switch in auxiliary buck-boost converter.

Use Value: Integrated body diode with low V_SD (3.9 V) and fast t_fr (10 ns) minimizes conduction loss during freewheeling intervals.

Use Scenario: 48 V boost stage interfacing 12 V starter battery with 48 V mild-hybrid rail in P0/P1 architectures.

IC Role / Device Role / Timing Role: Main switching transistor in high-frequency (300+ kHz) boost converter handling up to 134 A peak current.

Use Value: 175 °C max junction temperature and AEC-Q101 qualification ensure long-term reliability under under-hood thermal stress.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 750 V SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Wolfspeed C3M0040070D	Same V_DSS (700 V), slightly higher R_DS(on) (45 mΩ), no driver source pin, TO247-3L package.	Lacks Kelvin source; requires careful PCB layout to mitigate gate oscillation in high-di/dt environments.	Preferred where board space allows TO247 and gate driver layout can compensate for missing Kelvin source.
ROHM SCT3040KL	750 V rating, R_DS(on) = 42 mΩ, TO263-7 package with driver source, but lower Q_G (27 nC) and higher C_oss (105 nC @ 500 V).	Lower gate charge eases driver design but higher E_oss increases turn-off loss in hard-switched topologies.	Preferred for gate-driver-limited designs where E_oss sensitivity is secondary to drive strength requirements.

Compared with C3M0040070D and SCT3040KL, AIMBG75R040M1HXTMA1 uniquely combines driver-source pin, lowest Q_fr, and AEC-Q101 qualification-making it optimal for automotive OBC and DC-DC converters demanding both reliability and switching efficiency.

Availability

AIMBG75R040M1HXTMA1 is available at Aetrix Electronics and suitable for automotive on-board chargers, HV-LV DC-DC converters, and 48 V mild-hybrid boost converters requiring stable component supply, AEC-Q101 compliance, and high-temperature operational continuity.

Supply support for AIMBG75R040M1HXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.

This part belongs to Infineon's CoolSiC™ G1 automotive SiC MOSFET product line, designed specifically for high-efficiency, high-reliability power conversion in 800 V electric vehicle architectures including OBC, DC-DC, and traction auxiliary systems.

FAQ

Can AIMBG75R040M1HXTMA1 be used with unipolar gate drivers?

Yes. Its high V_GS(th) (3.5–5.6 V) and low C_rss/C_iss ratio make it inherently resistant to parasitic turn-on, enabling reliable operation with 0 V/18 V gate drive. The dedicated driver source pin (Pin 2) further isolates gate loop inductance, ensuring clean switching waveforms even under high dv/dt conditions.

What is the maximum continuous drain current at 100 °C case temperature?

The datasheet specifies I_D_DC = 33 A at T_C = 100 °C. This value is thermally limited-not by package current rating-but by junction temperature constraints (T_j ≤ 175 °C) and R_DS(on) increase at elevated temperature. Derating curves confirm usable current remains above 25 A up to T_C = 125 °C with appropriate heatsinking.

Is the internal body diode suitable for synchronous rectification?

No. While the integrated body diode has low forward voltage (V_SD = 3.9 V typ) and fast recovery (t_fr = 10 ns), its Q_fr is significantly higher than discrete SiC Schottky diodes. For synchronous rectification, external SiC Schottky diodes are recommended to minimize reverse recovery loss and improve light-load efficiency.

How does the PG-TO263-7 package improve thermal performance over standard TO263-3?

The PG-TO263-7 adds four extra source pins (Pins 3–7) and separates driver source (Pin 2), reducing source inductance and improving current sharing. More critically, its exposed drain tab provides direct thermal path to heatsink with R_th(j-c) = 0.71 °C/W-22% lower than typical TO263-3 SiC MOSFETs-enabling 211 W power dissipation at T_C = 25 °C.

AIMBG75R040M1HXTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: -

Packaging:: Tape & Reel (TR)

Product Status:: Active

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: -

Current - Collector (Ic) (Max):: -

Current - Collector Pulsed (Icm):: -

Vce(on) (Max) @ Vge, Ic:: -

Power - Max:: -

Switching Energy:: -

Input Type:: -

Gate Charge:: -

Td (on/off) @ 25°C:: -

Test Condition:: -

Reverse Recovery Time (trr):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

AIMBG75R040M1HXTMA1 FAQ

1.How can I place an order for AIMBG75R040M1HXTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for AIMBG75R040M1HXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AIMBG75R040M1HXTMA1 reliable?

The price and inventory of AIMBG75R040M1HXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AIMBG75R040M1HXTMA1 is usually 5 days.

3.What payment methods are accepted for AIMBG75R040M1HXTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AIMBG75R040M1HXTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AIMBG75R040M1HXTMA1?

AIMBG75R040M1HXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AIMBG75R040M1HXTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AIMBG75R040M1HXTMA1?

For technical support, including AIMBG75R040M1HXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AIMBG75R040M1HXTMA1 requirements.

6.How does Aetrix verify that AIMBG75R040M1HXTMA1 is sourced from the original manufacturer or authorized distributors?

All AIMBG75R040M1HXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AIMBG75R040M1HXTMA1 meets industry standards.

7.What is the process for return or replacement of AIMBG75R040M1HXTMA1?

All AIMBG75R040M1HXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with AIMBG75R040M1HXTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AIMBG75R040M1HXTMA1 part is unused and in its original packaging.

Return procedure for AIMBG75R040M1HXTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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