Infineon Technologies AIMBG75R140M1HXTMA1

Overview

AIMBG75R140M1HXTMA1 from Infineon is a 750 V, 140 mΩ silicon carbide (SiC) MOSFET in PG-TO263-7 package with driver source pin, designed for high-efficiency automotive power conversion in on-board chargers and HV-LV DC-DC converters. It delivers 38 A peak drain current, 12 nC total gate charge, and 28 nC output charge at 500 V - enabling hard-switching half-bridges and soft-switching topologies operating up to 175 °C junction temperature.

For engineers reviewing the AIMBG75R140M1HXTMA1 datasheet, AIMBG75R140M1HXTMA1 pinout, AIMBG75R140M1HXTMA1 application, or AIMBG75R140M1HXTMA1 equivalent, key selection criteria include avalanche ruggedness (48 mJ), low Crss/Ciss ratio (2.5/351 pF), robust 5.6 V max VGS(th), driver-source pin isolation, and AEC-Q101 qualification for automotive-grade reliability.

Technical Context

This CoolSiC™ G1 device uses unipolar gate driving with a high 4.3 V typical threshold voltage and low reverse transfer capacitance (2.5 pF), minimizing risk of parasitic turn-on in high-dv/dt environments. Its internal body diode supports bidirectional operation while maintaining 3.9 V forward voltage at 4.7 A and 25 °C.

The PG-TO263-7 package integrates a dedicated driver source pin (Pin 2) electrically isolated from power source (Pins 3–7), enabling Kelvin-source gate control to eliminate source inductance effects. Thermal resistance is 1.5 °C/W (junction-to-case), validated per JESD51-14.

Key Specifications

Pinout & Package

Package: PG-TO263-7 (leadless D²PAK variant) with exposed drain tab for thermal dissipation and integrated driver source pin for Kelvin sensing.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar 750 V SiC MOSFET applications.

Compared with C3M0120090D and SCT3105KL, AIMBG75R140M1HXTMA1 trades 20–25 mΩ higher RDS(on) for superior gate control integrity via driver source pin, higher VGS(th) margin, and AEC-Q101 validation - making it the preferred choice for safety-critical automotive power stages where layout constraints or reliability requirements preclude external compensation.

Availability

AIMBG75R140M1HXTMA1 is available at Aetrix Electronics and suitable for on-board chargers, HV-LV DC-DC converters, and high-voltage auxiliary power supplies requiring stable component supply, automotive qualification, and thermal resilience up to 175 °C.

Supply support for AIMBG75R140M1HXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.

This device belongs to the CoolSiC™ Automotive G1 product line, engineered specifically for high-reliability, high-efficiency traction and charging systems in electric vehicles - emphasizing avalanche ruggedness, gate drive simplicity, and AEC-Q101 compliance.

FAQ

Can AIMBG75R140M1HXTMA1 be used without a driver source connection?

No. The driver source pin (Pin 2) must be connected directly to the gate driver IC's source reference. Using only the power source pins (Pins 3–7) for gate return introduces source inductance that destabilizes switching, risks parasitic turn-on, and invalidates the specified 200 V/ns dv/dt rating. Infineon explicitly warns against exchanging these pins.

What is the maximum recommended gate voltage for continuous operation?

The datasheet specifies a continuous gate-source voltage operating range of −2 V to +20 V (Table 4). While transient rating allows −10 V to +25 V for ≤500 ns pulses, sustained operation above +20 V accelerates gate oxide degradation and may cause premature VGS(th) drift beyond the 5.6 V maximum limit over lifetime.

Is the internal body diode suitable for synchronous rectification?

Yes - the integrated SiC body diode exhibits 3.9 V forward voltage at 4.7 A and 25 °C, with 20 ns forward recovery time at 1000 A/µs di/dt. However, its Qfr (46–57 nC) is higher than discrete SiC Schottky diodes; for ZVS/ZCS topologies demanding lowest reverse recovery loss, external diode clamping is recommended.

How does thermal resistance change with mounting pressure or interface material?

Rth(j-c) = 1.5 °C/W is measured under standardized JEDEC conditions (100 psi mounting pressure, 1.5 µm nickel-plated copper baseplate, no thermal interface material). Adding TIM (e.g., 0.5 W/m·K grease) typically increases Rth(j-c) by 0.2–0.4 °C/W; using solder instead of paste reduces it by ~0.1 °C/W but requires strict process control to avoid voiding.