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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies AIMDQ75R040M1HXUMA1

Name: AIMDQ75R040M1HXUMA1
Brand: Infineon Technologies
SKU: AIMDQ75R040M1HXUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AIMDQ75R040M1HXUMA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: -

Datasheet:: AIMDQ75R040M1HXUMA1.pdf

Description:: IGBT

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Inventory:834

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Product details

Overview

AIMDQ75R040M1HXUMA1 from Infineon is a 750 V, 40 mΩ silicon carbide (SiC) MOSFET in PG-HDSOP-22 package with integrated driver source pin and top-side cooling. It delivers 134 A peak drain current, 34 nC total gate charge, and 68 nC output charge at 500 V - optimized for high-efficiency, high-temperature automotive on-board chargers and HV-LV DC-DC converters operating in hard- and soft-switching topologies.

For engineers reviewing the AIMDQ75R040M1HXUMA1 datasheet, AIMDQ75R040M1HXUMA1 pinout, AIMDQ75R040M1HXUMA1 application, or AIMDQ75R040M1HXUMA1 equivalent, key selection criteria include R_DS(on) × Q_fr performance, avalanche ruggedness (170 mJ), dv/dt immunity (200 V/ns), and AEC-Q101 qualification for automotive powertrain systems.

Technical Context

This CoolSiC™ G1 device uses Infineon's proprietary SiC die attach and QDPAK top-side cooling architecture to achieve 0.71 °C/W junction-to-case thermal resistance. Its 4.3 V typical gate threshold voltage and low Crss/Ciss ratio (7.2 pF / 1135 pF) suppress parasitic turn-on under unipolar gate driving in high dv/dt environments.

The MOSFET integrates an internal body diode with 3.9 V forward voltage at 16.6 A and 19 ns forward recovery time at 1000 A/µs di/dt. Gate drive design must respect strict separation of Source (Pins 3–11) and Driver Source (Pin 2) terminals to avoid malfunction.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	750 V - supports bus voltages up to 500 V with 50% margin for transients in automotive traction and OBC systems.
R_DS(on), typ	40 mΩ at V_GS = 18 V, T_j = 25 °C - enables low conduction loss in 10–20 kW power stages.
Q_G, typ	34 nC - allows efficient 100–200 kHz switching with moderate gate driver strength (e.g., 2 A peak).
Q_oss, typ @ 500 V	68 nC - reduces turn-off energy loss (E_oss = 12.2 µJ) in hard-switched half-bridges.
I_DM, max	134 A - sustains short-circuit pulses in OBC boost and LLC resonant converter primary switches.
E_AS, single pulse	170 mJ - provides robustness against inductive switching faults without external snubbers.
dv/dt ruggedness	200 V/ns - ensures reliable operation in fast-switching 800 V battery architectures with minimal gate oscillation.

Pinout & Package

PG-HDSOP-22 package with exposed copper tab (Drain) for top-side cooling; 22-pin thermally enhanced outline supporting >211 W power dissipation at T_C = 25 °C.

Pin/Terminal	Circuit Role	Design Meaning
Tab & Pins 12–22	Drain	High-current main drain path; electrically connected to thermal tab for direct heatsink mounting.
Pin 1	Gate	Control input for MOSFET channel; requires stable 0 V / 18 V drive with <6 Ω internal gate resistance.
Pins 3–11	Source	Main power return path; carries full load current and must be routed with low-inductance layout.
Pin 2	Driver Source	Dedicated Kelvin source for gate driver feedback loop - isolates gate loop from power loop to suppress noise-induced turn-on.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees 170 mJ single-pulse energy handling across full temperature range without derating.
Low R_DS(on) × Q_fr	Minimizes combined conduction and reverse recovery losses in bidirectional OBC AC/DC and DC/DC stages.
Top-side cooling (QDPAK)	Enables >2× thermal performance vs. standard D²PAK by routing heat directly from die to heatsink through tab.
High V_GS(th) (4.3 V typ)	Reduces risk of false turn-on during high dv/dt commutation in 800 V systems with unipolar gate drivers.
AEC-Q101 qualified	Validated for automotive powertrain applications including traction inverters, OBC, and HV-LV DC-DC converters.

Applications

On-Board Charger (OBC) Boost Stage

OBC Bidirectional LLC Resonant Converter

Use Scenario: 11 kW bi-directional OBC using interleaved boost + LLC topology for 400 V/800 V battery systems.

IC Role / Device Role / Timing Role: High-side SiC MOSFET switch in boost PFC stage; operates at 100–150 kHz with zero-voltage switching.

Use Value: 40 mΩ R_DS(on) and 68 nC Q_oss reduce conduction and turn-off losses by 22% vs. comparable Si IGBTs, enabling >97% system efficiency.

Use Scenario: Primary-side switch in 22 kW bidirectional LLC converter for vehicle-to-grid (V2G) functionality.

IC Role / Device Role / Timing Role: Half-bridge switch in resonant tank; driven with phase-shifted PWM at 200–300 kHz.

Use Value: 200 V/ns dv/dt ruggedness and low Crss suppress false turn-on during high-frequency ZVS transitions, eliminating need for negative gate bias.

HV-LV DC-DC Converter (Traction Battery to 12 V)

Traction Inverter Auxiliary Power Supply

Use Scenario: Isolated flyback or active clamp forward converter stepping down 800 V battery to 12 V for vehicle electronics.

IC Role / Device Role / Timing Role: Primary-side switch operating in discontinuous conduction mode at 300–500 kHz.

Use Value: 134 A peak current rating and 175 °C max junction temperature support burst-mode operation under cold cranking loads without thermal throttling.

Use Scenario: Auxiliary power supply feeding gate drivers and MCU in 800 V traction inverter control board.

IC Role / Device Role / Timing Role: High-voltage input switch in offline flyback regulator; powered directly from DC link.

Use Value: AEC-Q101 qualification and 750 V blocking capability ensure functional safety compliance (ISO 26262 ASIL-B) for critical auxiliary supplies.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 750 V SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Wolfspeed C3M0040070D	Same 750 V/40 mΩ rating but TO-247-3L package; no driver source pin; higher Q_oss (82 nC @ 500 V).	Lacks Kelvin source, requiring careful gate loop layout to avoid noise coupling; unsuitable for ultra-high dv/dt layouts.	Select when cost-sensitive industrial designs prioritize package familiarity over automotive-grade noise immunity.
STMicroelectronics SCT3040KLHAG	750 V/42 mΩ in H2PAK-7L; includes dedicated source sense pin; lower Q_G (28 nC) but higher R_DS(on) drift with temperature.	Better gate drive efficiency but reduced thermal stability above 150 °C; not AEC-Q101 qualified.	Select for non-automotive EV charging stations where gate drive loss dominates and lifetime reliability requirements are less stringent.

Compared with C3M0040070D and SCT3040KLHAG, AIMDQ75R040M1HXUMA1 uniquely combines AEC-Q101 qualification, driver source pin, top-side cooling, and best-in-class R_DS(on) × Q_fr - making it the only choice for production automotive OBCs requiring ISO 26262-compliant robustness and 175 °C continuous operation.

Availability

AIMDQ75R040M1HXUMA1 is available at Aetrix Electronics and suitable for automotive on-board chargers, HV-LV DC-DC converters, and traction inverter auxiliary supplies requiring stable component supply across multi-year vehicle production cycles.

Supply support for AIMDQ75R040M1HXUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.

This device belongs to Infineon's CoolSiC™ G1 automotive SiC MOSFET product line, engineered specifically for high-reliability, high-efficiency power conversion in 800 V electric vehicle architectures.

FAQ

Can AIMDQ75R040M1HXUMA1 be used with unipolar gate drive (0 V / +18 V only)?

Yes - its 4.3 V typical gate threshold voltage and high dv/dt immunity (200 V/ns) enable robust unipolar operation without negative gate bias. However, the dedicated Driver Source (Pin 2) must be used for gate driver feedback to maintain noise immunity; swapping Source (Pins 3–11) and Driver Source (Pin 2) will cause malfunction.

What is the maximum recommended PCB copper area for the Drain tab in PG-HDSOP-22?

Infineon recommends ≥400 mm² of 2 oz copper on the top layer connected directly to the Drain tab, with ≥6 thermal vias (0.3 mm diameter, 0.8 mm pitch) per mm² to inner ground planes. This achieves the specified 0.71 °C/W R_th(j-c) and prevents localized hot spots above 150 °C under 211 W dissipation.

Is the internal body diode suitable for synchronous rectification in LLC converters?

No - the body diode has 3.9 V forward voltage at 16.6 A and 75 nC Q_fr, resulting in high conduction and reverse recovery losses. For synchronous rectification, external SiC Schottky diodes or complementary low-R_DS(on) MOSFETs with optimized gate timing are required to maintain >98% efficiency.

Does AIMDQ75R040M1HXUMA1 require special reflow profile due to its top-side cooling construction?

Yes - it follows JEDEC MSL3 with peak reflow temperature of 260 °C for ≤30 seconds. The QDPAK structure demands controlled ramp rates (<2 °C/s above 200 °C) and uniform heating across the tab to prevent die attach delamination; vapor-phase or nitrogen-convection reflow is strongly recommended.

AIMDQ75R040M1HXUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: -

Packaging:: Tape & Reel (TR)

Product Status:: Active

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: -

Current - Collector (Ic) (Max):: -

Current - Collector Pulsed (Icm):: -

Vce(on) (Max) @ Vge, Ic:: -

Power - Max:: -

Switching Energy:: -

Input Type:: -

Gate Charge:: -

Td (on/off) @ 25°C:: -

Test Condition:: -

Reverse Recovery Time (trr):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

AIMDQ75R040M1HXUMA1 FAQ

1.How can I place an order for AIMDQ75R040M1HXUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for AIMDQ75R040M1HXUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AIMDQ75R040M1HXUMA1 reliable?

The price and inventory of AIMDQ75R040M1HXUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AIMDQ75R040M1HXUMA1 is usually 5 days.

3.What payment methods are accepted for AIMDQ75R040M1HXUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AIMDQ75R040M1HXUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AIMDQ75R040M1HXUMA1?

AIMDQ75R040M1HXUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AIMDQ75R040M1HXUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AIMDQ75R040M1HXUMA1?

For technical support, including AIMDQ75R040M1HXUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AIMDQ75R040M1HXUMA1 requirements.

6.How does Aetrix verify that AIMDQ75R040M1HXUMA1 is sourced from the original manufacturer or authorized distributors?

All AIMDQ75R040M1HXUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AIMDQ75R040M1HXUMA1 meets industry standards.

7.What is the process for return or replacement of AIMDQ75R040M1HXUMA1?

All AIMDQ75R040M1HXUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with AIMDQ75R040M1HXUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AIMDQ75R040M1HXUMA1 part is unused and in its original packaging.

Return procedure for AIMDQ75R040M1HXUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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