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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies AIMDQ75R140M1HXUMA1

Name: AIMDQ75R140M1HXUMA1
Brand: Infineon Technologies
SKU: AIMDQ75R140M1HXUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AIMDQ75R140M1HXUMA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: -

Datasheet:: AIMDQ75R140M1HXUMA1.pdf

Description:: IGBT

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Product details

Overview

AIMDQ75R140M1HXUMA1 from Infineon is a 750 V, 140 mΩ silicon carbide (SiC) MOSFET in PG-HDSOP-22 package with driver source pin, rated for 38 A peak drain current and qualified to AEC-Q101 for automotive on-board chargers and HV-LV DC-DC converters operating in hard- and soft-switching topologies.

For engineers reviewing the AIMDQ75R140M1HXUMA1 datasheet, AIMDQ75R140M1HXUMA1 pinout, AIMDQ75R140M1HXUMA1 application, or AIMDQ75R140M1HXUMA1 equivalent, key selection considerations include its 750 V V_DSS, 140 mΩ R_DS(on) at 25 °C, 12 nC total gate charge, Q_oss of 28 nC at 500 V, and integrated body diode with 46 nC Q_fr - all critical for high-efficiency, high-temperature EV power conversion design.

Technical Context

This CoolSiC™ G1 device uses unipolar gate driving with a high V_GS(th) of 4.3 V (typ) and low Crss/Ciss ratio (2.5/351 pF), minimizing risk of parasitic turn-on in high-dv/dt environments. Its internal die attach and QDPAK top-side cooling enable stable operation up to 175 °C junction temperature.

The PG-HDSOP-22 package integrates separate driver source (Pin 2) and power source (Pins 3–11) terminals to reduce common-source inductance, while Drain (Pins 12–22 + Tab) supports high-current conduction with 1.5 °C/W junction-to-case thermal resistance.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	750 V - Supports bus voltages beyond 500 V in automotive traction and OBC systems without derating.
R_DS(on), typ	140 mΩ at V_GS = 18 V, T_j = 25 °C - Enables low conduction loss in 10–20 kW DC-DC stages.
Q_G, typ	12 nC - Allows fast switching with moderate gate drive strength (e.g., 1.8 Ω RG), reducing turn-on/turn-off times to ≤13 ns.
Q_oss, typ @ 500 V	28 nC - Low output charge minimizes energy loss during hard-switching transitions in half-bridge configurations.
Q_fr, typ @ 1000 A/µs	46 nC - Quantifies reverse recovery charge of integrated SiC body diode, critical for ZVS/ZCS topology efficiency.
T_j,max	175 °C - Rated for continuous operation in under-hood automotive environments without active derating.
R_th(j-c)	1.5 °C/W - Enables direct heatsink mounting via exposed tab for high-power density thermal management.

Pinout & Package

PG-HDSOP-22 package features top-side cooling via exposed copper tab (Drain), isolated gate terminal (Pin 1), dedicated driver source (Pin 2), power source (Pins 3–11), and multi-pin Drain connection (Pins 12–22 + Tab) for low-inductance, high-current routing.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control input; requires 0–20 V gate drive with transient rating up to 25 V for robustness.
Pin 2	Driver Source	Reference node for gate driver IC return path; reduces common-source inductance and improves switching stability.
Pins 3–11	Power Source	Main source connection for power loop; electrically isolated from Pin 2 to prevent gate loop coupling.
Pins 12–22 + Tab	Drain	High-current output node; tab serves as primary thermal and electrical path to heatsink.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees single-pulse E_AS ≥ 48 mJ at 50 V, enabling reliable operation under short-circuit or overvoltage transients.
Low Crss/Ciss ratio	2.5/351 pF - Suppresses Miller-induced false turn-on in high-frequency, high-dv/dt applications like resonant LLC converters.
High V_GS(th)	4.3 V (typ) - Reduces susceptibility to noise-induced turn-on compared to Si MOSFETs with ~2–3 V thresholds.
Top-side cooling (QDPAK)	Thermal resistance R_th(j-c) = 1.5 °C/W - Delivers >30% higher power density vs. standard D²PAK in space-constrained OBC modules.
Separate driver source	Pin 2 provides Kelvin sense for gate driver feedback - eliminates source inductance impact on switching waveform fidelity.

Applications

On-Board Charger (OBC) Half-Bridge

HV-LV DC-DC Converter (ZVS)

Use Scenario: 11 kW bidirectional OBC using dual-phase interleaved hard-switching half-bridges.

IC Role / Device Role / Timing Role: High-side SiC MOSFET switch handling 750 V DC link, switching at 100–150 kHz with unipolar gate drive.

Use Value: 140 mΩ R_DS(on) and 12 nC Q_G enable <95% system efficiency at full load while maintaining <100 °C case temperature.

Use Scenario: 3.3 kW isolated DC-DC stage in vehicle battery management, operating in phase-shifted full-bridge ZVS mode.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier with body diode commutation during zero-voltage transition.

Use Value: 46 nC Q_fr and low C_oss (32 pF) minimize dead-time losses and improve ZVS window margin across 20–100 °C ambient.

Automotive Traction Inverter Auxiliary Stage

48 V–400 V Bidirectional DC-DC for Mild Hybrid

Use Scenario: Auxiliary power supply for gate drivers and MCU in 800 V traction inverters, requiring high reliability under vibration and thermal cycling.

IC Role / Device Role / Timing Role: Low-side switch in flyback or forward converter delivering isolated 15 V/2 A bias rails.

Use Value: AEC-Q101 qualification and 175 °C T_j,max ensure >15-year field life in under-hood environments with no derating needed.

Use Scenario: Bidirectional buck-boost stage connecting 48 V mild hybrid architecture to 400 V main battery, operating at 200 kHz.

IC Role / Device Role / Timing Role: Synchronous switch in dual-active-bridge topology managing regenerative braking energy transfer.

Use Value: Driver source pin (Pin 2) and low Q_oss reduce switching loss by 22% vs. comparable Si devices, improving round-trip efficiency to >97.5%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 750 V SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW75N140F7	140 mΩ R_DS(on), but 22 nC Q_G and no driver source pin; PG-HSOF-8 package with bottom-side cooling only.	Lacks Kelvin source, limiting high-frequency hard-switching performance; better suited for lower-frequency (<75 kHz), cost-sensitive industrial SMPS.	Select when board layout constraints prohibit top-side heatsinking and gate drive complexity must be minimized.
WOLFSPEED C3M0140070D	140 mΩ R_DS(on), 13.5 nC Q_G, TO-247-4L with Kelving source; higher R_th(j-c) (2.2 °C/W) than PG-HDSOP-22.	TO-247-4L enables higher peak current (45 A) but requires larger PCB area and less compact thermal interface than QDPAK.	Select when maximum surge current capability and legacy TO-247 compatibility outweigh size and thermal density requirements.

Compared with STW75N140F7 and C3M0140070D, AIMDQ75R140M1HXUMA1 delivers superior thermal density (1.5 °C/W), integrated driver source for clean switching waveforms, and AEC-Q101 validation - making it optimal for space-constrained, high-reliability automotive power stages where efficiency, size, and qualification are jointly critical.

Availability

AIMDQ75R140M1HXUMA1 is available at Aetrix Electronics and suitable for automotive on-board chargers, HV-LV DC-DC converters, and traction auxiliary power supplies requiring stable component supply, long-term lifecycle support, and AEC-Q101-compliant sourcing.

Supply support for AIMDQ75R140M1HXUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon carbide and gallium nitride technologies.

This part belongs to Infineon's CoolSiC™ G1 automotive MOSFET product line, engineered specifically for high-efficiency, high-reliability 750 V power conversion in electric vehicle charging and battery systems.

FAQ

Can AIMDQ75R140M1HXUMA1 be used with gate drive voltages above 20 V?

No. The absolute maximum gate-source voltage is 25 V for transient conditions (tp ≤ 500 ns, duty cycle ≤ 1%), but recommended steady-state V_GS is 0–20 V. Exceeding 20 V continuously accelerates threshold voltage drift and degrades long-term R_DS(on) stability per AN2018-09.

Is the internal body diode suitable for continuous freewheeling operation?

Yes - the integrated SiC body diode is rated for continuous reverse current up to 17 A at T_C = 25 °C and exhibits low Q_fr (46 nC typ). However, its forward voltage (3.9 V typ at 4.7 A) is higher than external SiC Schottky diodes, so synchronous rectification is preferred for highest efficiency.

What is the significance of the driver source (Pin 2) versus power source (Pins 3–11)?

Pin 2 provides a dedicated Kelvin return path for the gate driver IC, decoupling gate loop current from high di/dt power source current. This prevents voltage spikes across source inductance from distorting the effective V_GS, ensuring consistent switching timing and suppressing parasitic oscillation.

Does AIMDQ75R140M1HXUMA1 require special PCB layout considerations?

Yes - minimize loop inductance between Drain (Tab + Pins 12–22), Power Source (Pins 3–11), and Gate (Pin 1). Use wide copper pours for Drain and Source, place gate driver IC within 5 mm of Pin 1 and Pin 2, and avoid routing noisy signals near Pin 2. Layout guidelines are detailed in Infineon Application Note AN2019-04.

AIMDQ75R140M1HXUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: -

Packaging:: Tape & Reel (TR)

Product Status:: Active

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: -

Current - Collector (Ic) (Max):: -

Current - Collector Pulsed (Icm):: -

Vce(on) (Max) @ Vge, Ic:: -

Power - Max:: -

Switching Energy:: -

Input Type:: -

Gate Charge:: -

Td (on/off) @ 25°C:: -

Test Condition:: -

Reverse Recovery Time (trr):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

AIMDQ75R140M1HXUMA1 FAQ

1.How can I place an order for AIMDQ75R140M1HXUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for AIMDQ75R140M1HXUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AIMDQ75R140M1HXUMA1 reliable?

The price and inventory of AIMDQ75R140M1HXUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AIMDQ75R140M1HXUMA1 is usually 5 days.

3.What payment methods are accepted for AIMDQ75R140M1HXUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AIMDQ75R140M1HXUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AIMDQ75R140M1HXUMA1?

AIMDQ75R140M1HXUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AIMDQ75R140M1HXUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AIMDQ75R140M1HXUMA1?

For technical support, including AIMDQ75R140M1HXUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AIMDQ75R140M1HXUMA1 requirements.

6.How does Aetrix verify that AIMDQ75R140M1HXUMA1 is sourced from the original manufacturer or authorized distributors?

All AIMDQ75R140M1HXUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AIMDQ75R140M1HXUMA1 meets industry standards.

7.What is the process for return or replacement of AIMDQ75R140M1HXUMA1?

All AIMDQ75R140M1HXUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with AIMDQ75R140M1HXUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AIMDQ75R140M1HXUMA1 part is unused and in its original packaging.

Return procedure for AIMDQ75R140M1HXUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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