Alpha & Omega Semiconductor Inc. AOGF60B65H2AL
- Part No.:
- AOGF60B65H2AL
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Category:
- Single IGBTs
- Package:
- TO-3P-3 Full Pack
- Datasheet:
-
AOGF60B65H2AL.pdf
- Description:
- IGBT 60A
- Quantity:
- Payment:

- Shipping:

Inventory:6,067
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Product details
Overview
AOGF60B65H2AL from Alpha & Omega Semiconductor is a 650V, 60A trench-gate field-stop IGBT with integrated soft-fast anti-parallel diode in TO3PF package. It delivers 1.95V VCE(sat) at TJ=25°C and 60A, 1.17mJ Eoff at 150°C, and 318ns diode trr under 30A/200A/μs conditions-optimized for high-frequency PFC stages in industrial power supplies.
For engineers reviewing the AOGF60B65H2AL datasheet, pinout, applications, or equivalent options, key selection criteria include verified 650V breakdown voltage, confirmed TO3PF thermal resistance (RθJC = 1.7°C/W for IGBT, 2.5°C/W for diode), soft-recovery diode performance (Qrr = 0.8mC, S-factor >4), and gate charge profile (Qg = 84nC) enabling precise loss modeling in hard-switched topologies.
Technical Context
This AlphaIGBT employs field-stop trench structure with optimized carrier lifetime control to achieve low conduction loss while maintaining fast, soft turn-off behavior. Its integrated diode features tailored minority-carrier lifetime and doping profile to suppress voltage overshoot and reduce EMI during reverse recovery.
The device operates with ±30V VGE rating and 4.6V VGE(th), supporting standard 15V gate drive. Switching parameters-including tD(off) = 168ns, tf = 76ns, and Etotal = 3.54mJ at 25°C-are characterized under 400V VCC, 60A IC, and 5Ω gate resistance, enabling accurate loss calculation in real-world PFC designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCES | 650V - Withstands DC bus voltages up to 450V AC input rectified systems with margin. |
| IC (TC=100°C) | 60A - Continuous current capability at 100°C case temperature, suitable for thermally constrained enclosures. |
| VCE(sat) (TJ=25°C) | 1.95V - Low saturation voltage reduces conduction loss in high-duty-cycle PFC boost stages. |
| Eoff (TJ=150°C) | 1.17mJ - Verified turn-off energy enables thermal design for 100kHz+ switching without excessive heatsinking. |
| trr (diode, 30A/200A/μs) | 318ns - Soft reverse recovery time with low Qrr (0.8mC) minimizes snubber stress and EMI generation. |
| Qg | 84nC - Total gate charge determines required gate driver peak current (≥16.8A for 5ns rise time). |
| RθJC (IGBT) | 1.7°C/W - Junction-to-case thermal resistance supports 74W power dissipation at 100°C case temperature. |
Pinout & Package
Package: TO3PF (isolated tab, 3-pin through-hole). Thermal pad electrically isolated from collector; mounting screw provides mechanical and thermal interface to heatsink.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate | Control terminal accepting ±30V VGE; requires 84nC total charge for full enhancement. |
| C | Collector | Main high-side power terminal; connected to heatsink via isolated tab; rated for 650V blocking. |
| E | Emiter | Emitter reference and current return path; common node for gate drive return and sense resistor placement. |
Key Features
| Feature | Design Value |
|---|---|
| AlphaIGBT technology | Trench-gate field-stop structure delivering 1.95V VCE(sat) and 1.17mJ Eoff simultaneously at 60A/150°C. |
| Soft-fast anti-parallel diode | 318ns trr, 0.8mC Qrr, and >4 softness factor ensure low-voltage overshoot and reduced EMI in discontinuous conduction mode. |
| High dV/dt immunity | Rated for 1000V/μs (TJ=125°C), enabling robust operation in noisy industrial environments without false triggering. |
| Thermal performance | 1.7°C/W RθJC (IGBT) and 2.5°C/W RθJC (diode) support compact thermal design with single heatsink interface. |
Applications
| Industrial PFC Modules | Server Power Supplies |
|---|---|
Use Scenario: Active front-end rectification in 3kW–5kW industrial UPS and motor drives operating at 65–100kHz. IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost PFC stage, handling 60A RMS input current. Use Value: 1.95V VCE(sat) and 1.17mJ Eoff enable >98% efficiency at full load while maintaining thermal margin below 100°C case temperature. |
Use Scenario: Primary-side switching in 80PLUS Titanium-certified 1U server PSUs requiring ultra-low standby loss and high peak efficiency. IC Role / Device Role / Timing Role: Critical switching element in interleaved CCM boost PFC, operating at 100kHz with tight duty cycle control. Use Value: Soft diode recovery (Qrr = 0.8mC) eliminates need for external snubbers, reducing BOM count and improving reliability over 10-year service life. |
| Solar Inverter DC-DC Stages | EV Onboard Chargers |
Use Scenario: DC-DC isolation stage in string inverters converting 800–1000V PV array output to 400V battery bus. IC Role / Device Role / Timing Role: High-voltage IGBT switch in phase-shifted full-bridge topology, switching at 50–80kHz. Use Value: 650V VCES rating with 2.58V VCE(sat) at 150°C ensures safe operation under worst-case overvoltage transients and high ambient temperatures. |
Use Scenario: Bidirectional PFC and DC-DC conversion in 11kW OBCs charging EV batteries from 230VAC mains. IC Role / Device Role / Timing Role: Dual-role switch in totem-pole PFC and CLLC resonant converter, requiring robust body diode conduction and fast turn-off. Use Value: Integrated soft diode enables zero-voltage switching (ZVS) assist in totem-pole PFC, reducing switching losses by 35% versus discrete diode solutions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar IGBT switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXYS IXGN60N60C3 | 600V rating, higher VCE(sat) (2.2V), slower diode (trr = 450ns, Qrr = 1.4mC), TO247 package. | Lower voltage margin limits use in 400VAC+ systems; higher switching loss increases heatsink requirements. | Select when cost sensitivity outweighs efficiency targets and 600V margin suffices. |
| Infineon IKP60N65ES5 | 650V rating, lower Eoff (0.95mJ), but no integrated soft diode-requires external SiC Schottky. | Superior turn-off loss but adds component count, layout complexity, and parasitic inductance risk in high-di/dt PFC. | Select when system-level optimization allows discrete diode integration and ZVS is not required. |
Compared with IXGN60N60C3 and IKP60N65ES5, the AOGF60B65H2AL uniquely combines 650V rating, soft-integrated diode, and TO3PF thermal performance-enabling simpler, more efficient, and EMI-optimized PFC designs without external diode trade-offs or voltage-margin compromises.
Availability
AOGF60B65H2AL is available at Aetrix Electronics and suitable for industrial power factor correction modules, server power supplies, and solar inverter DC-DC stages requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.
Supply support for AOGF60B65H2AL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-efficiency MOSFETs, IGBTs, and power ICs for computing, consumer, and industrial markets.
The AOGF60B65H2AL belongs to AOS' AlphaIGBT™ family, engineered specifically for high-frequency, high-efficiency PFC and soft-switching applications where low conduction loss, controlled turn-off softness, and integrated diode performance are critical.
FAQ
What is the maximum continuous collector current rating for AOGF60B65H2AL at 100°C case temperature?
The AOGF60B65H2AL is rated for 60A continuous collector current at TC = 100°C, as specified in the Absolute Maximum Ratings table. This rating assumes proper heatsinking and adherence to the derating curve shown in Figure 11, where current decreases linearly above 100°C case temperature.
Does AOGF60B65H2AL include an integrated freewheeling diode, and what are its key recovery characteristics?
Yes, the AOGF60B65H2AL integrates a soft and fast recovery anti-parallel diode. At TJ = 25°C, IF = 30A, and di/dt = 200A/μs, it achieves trr = 318ns, Qrr = 0.8mC, and Irm = 6.0A-confirmed in the Diode Reverse Recovery section of the datasheet. These values improve EMI behavior and reduce snubber stress in PFC applications.
What is the gate threshold voltage range for AOGF60B65H2AL, and how does it vary with temperature?
The AOGF60B65H2AL has a gate-emitter threshold voltage VGE(th) of 4.6V (typical) at TJ = 25°C, with a maximum of 10V across the full junction temperature range (−55°C to 150°C). The parameter decreases slightly with rising temperature, as shown in Figure 16, ensuring stable turn-on behavior under thermal stress.
Can AOGF60B65H2AL be used in totem-pole PFC topologies, and what design considerations apply?
Yes, the AOGF60B65H2AL is suitable for totem-pole PFC due to its soft-recovery integrated diode and 650V VCES. Designers must ensure gate drive strength meets the 84nC Qg requirement and verify that the 1.95V VCE(sat) supports target conduction loss at peak line conditions. Layout must minimize source inductance to preserve soft switching benefits.
What is the thermal resistance from junction to case for both the IGBT and diode sections of AOGF60B65H2AL?
The AOGF60B65H2AL specifies RθJC = 1.7°C/W for the IGBT section and RθJC = 2.5°C/W for the diode section, both measured under standard test conditions per JEDEC JESD51. These values are critical for independent thermal modeling of each die in the TO3PF package.
AOGF60B65H2AL Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Series:
- AlphaIGBT™
- Package/Case:
- TO-3P-3 Full Pack
- Packaging:
- Tube
- Product Status:
- Active
- IGBT Type:
- -
- Voltage - Collector Emitter Breakdown (Max):
- 650 V
- Current - Collector (Ic) (Max):
- 120 A
- Current - Collector Pulsed (Icm):
- 180 A
- Vce(on) (Max) @ Vge, Ic:
- 2.5V @ 15V, 60A
- Power - Max:
- 74 W
- Switching Energy:
- 2.36mJ (on), 1.17mJ (off)
- Input Type:
- Standard
- Gate Charge:
- 84 nC
- Td (on/off) @ 25°C:
- 35ns/168ns
- Test Condition:
- 400V, 60A, 5Ohm, 15V
- Reverse Recovery Time (trr):
- 318 ns
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-3PF
AOGF60B65H2AL FAQ
1.How can I place an order for AOGF60B65H2AL through Aetrix?
Please submit a Request for Quotation (RFQ) for AOGF60B65H2AL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AOGF60B65H2AL reliable?
The price and inventory of AOGF60B65H2AL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AOGF60B65H2AL is usually 5 days.
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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AOGF60B65H2AL transactions.
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4.How is shipping managed for AOGF60B65H2AL?
AOGF60B65H2AL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AOGF60B65H2AL order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AOGF60B65H2AL?
For technical support, including AOGF60B65H2AL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AOGF60B65H2AL requirements.
6.How does Aetrix verify that AOGF60B65H2AL is sourced from the original manufacturer or authorized distributors?
All AOGF60B65H2AL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AOGF60B65H2AL meets industry standards.
7.What is the process for return or replacement of AOGF60B65H2AL?
All AOGF60B65H2AL units undergo pre-shipment inspection (PSI). If there is an issue with AOGF60B65H2AL, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AOGF60B65H2AL part is unused and in its original packaging.
Return procedure for AOGF60B65H2AL:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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