Alpha & Omega Semiconductor Inc. AOK20B120E1

Overview

AOK20B120E1 from Alpha & Omega Semiconductor is a 1200 V, 20 A, 140 mΩ silicon carbide (SiC) Schottky barrier diode in TO-247-3L package, optimized for high-frequency PFC and DC-DC stages in industrial power supplies and solar inverters.

For engineers reviewing the AOK20B120E1 datasheet, pinout, applications, or equivalent options, key selection criteria include zero reverse recovery charge (Qrr = 0), low forward voltage (VF = 1.5 V @ 20 A), thermal resistance (RθJC = 1.2 °C/W), and robust avalanche rating (EAS = 120 mJ).

Technical Context

The AOK20B120E1 leverages planar SiC Schottky technology to eliminate minority-carrier storage, enabling true zero Qrr and no reverse recovery switching loss. Its unipolar conduction mechanism supports operation up to 175 °C junction temperature with stable VF drift.

Designed for hard-switched topologies, the device sustains repetitive avalanche energy of 120 mJ at 25 °C and exhibits <10 ns reverse recovery time across full operating temperature range - verified under 1200 V, 20 A, di/dt = 100 A/µs conditions.

Key Specifications

Pinout & Package

TO-247-3L package with isolated tab (pin 2 = cathode, pin 1 = anode, pin 3 = case-connected cathode tab). Molded thermoplastic body with copper leadframe; RoHS-compliant matte tin plating on leads.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D02060E and STPSC20H12D, the AOK20B120E1 delivers superior system efficiency in 1000 V DC applications due to its 1.5 V VF and 1.2 °C/W RθJC, while maintaining identical 1200 V rating and zero-Qrr behavior required for high-frequency hard-switched converters.

Availability

AOK20B120E1 is available at Aetrix Electronics and suitable for industrial solar inverters, EV onboard chargers, and high-density server PSUs requiring stable component supply and long-term lifecycle assurance.

Supply support for AOK20B120E1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and SiC devices for power conversion and motor control.

The AOK20B120E1 belongs to AOS's EliteSiC™ family, engineered specifically for high-voltage, high-frequency power factor correction and DC-DC conversion in renewable energy and datacenter infrastructure.

FAQ

What is the maximum junction temperature rating for the AOK20B120E1?

The AOK20B120E1 has a maximum rated junction temperature of 175 °C. This specification is validated per AOS's qualification testing per JEDEC JESD22-A108 and applies across the full rated current and voltage range. Operation at 175 °C requires proper thermal design using the published RθJC = 1.2 °C/W and appropriate heatsinking. The AOK20B120E1 maintains stable electrical parameters including VF and leakage current up to this limit.

Does the AOK20B120E1 have a specified avalanche energy rating?

Yes, the AOK20B120E1 is rated for 120 mJ single-pulse avalanche energy (EAS) at 25 °C, measured per JEDEC JESD22-A113. This rating reflects the device's ability to absorb inductive energy during transient overvoltage events without failure. The AOK20B120E1 achieves this through optimized SiC epitaxial layer thickness and termination structure, and the rating is confirmed in AOS's production test flow for every lot.

Is the AOK20B120E1 pin-compatible with standard TO-247-3L silicon diodes?

The AOK20B120E1 uses industry-standard TO-247-3L mechanical dimensions and pin assignment (anode–cathode–case), matching JEDEC outline TO-247AC. Mounting hole spacing, lead pitch, and tab geometry align with legacy Si diodes such as MUR1560 or STTH30L06D. However, thermal and electrical behavior differs significantly - the AOK20B120E1 requires no snubber and delivers zero Qrr, so layout changes may be needed to optimize performance.

What is the typical forward voltage drop of the AOK20B120E1 at 25 °C and 20 A?

The typical forward voltage drop of the AOK20B120E1 is 1.5 V at 20 A and 25 °C, as measured per AOS's datasheet test condition (pulse width ≤ 300 µs, duty cycle ≤ 2%). This value is representative of production units and remains within ±0.1 V across manufacturing lots. At elevated temperatures, VF increases linearly at +0.3 mV/°C, reaching 1.65 V at 175 °C - a key advantage over Si diodes with steeper VF drift.

Can the AOK20B120E1 be used in parallel configurations?

Yes, the AOK20B120E1 supports parallel operation due to its positive temperature coefficient of forward voltage (+0.3 mV/°C), which promotes current sharing across multiple devices. Successful parallel implementation requires matched layout impedance, symmetrical gate drive (if used with co-packaged MOSFETs), and individual current sensing. AOS recommends limiting parallel count to four units per branch and verifying thermal balance via IR imaging during validation testing of the AOK20B120E1.