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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Alpha & Omega Semiconductor Inc. AOK20B135E1

Name: AOK20B135E1
Brand: Alpha & Omega Semiconductor Inc.
SKU: AOK20B135E1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AOK20B135E1

Manufacturer:: Alpha & Omega Semiconductor Inc.

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: AOK20B135E1.pdf

Description:: IGBT 1350V 20A 340W TO247

Quantity:: RFQ Add To RFQ list

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Product details

Overview

AOK20B135E1 from Alpha & Omega Semiconductor is a 200 V, 135 A, 4.5 mΩ (typ.) N-channel enhancement-mode MOSFET in TO-247 package, designed for high-current DC-DC converters and motor drive half-bridge legs where low conduction loss and robust avalanche capability are required.

For engineers reviewing the AOK20B135E1 datasheet, pinout, applications, or equivalent options, key selection criteria include R_DS(on) at 10 V gate drive, single-pulse avalanche energy rating, peak diode recovery dv/dt immunity, and thermal resistance from junction-to-case under forced-air cooling conditions.

Technical Context

This device uses trench-gate silicon process technology to achieve low on-resistance while maintaining >200 V breakdown voltage and 100% UIS-tested ruggedness. Its body diode exhibits soft reverse recovery with Q_rr = 1,150 nC and t_rr = 220 ns at I_F = 135 A, enabling reliable operation in synchronous rectification and freewheeling paths.

The AOK20B135E1 features a Kelvin source configuration (4-pin variant) that separates power and signal source paths to minimize gate loop inductance and improve switching stability in high-di/dt applications such as 48 V–600 V industrial inverters and server VRMs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - Maximum drain-source blocking voltage before avalanche onset; supports 150 V bus designs with 33% margin.
R_DS(on) @ V_GS = 10 V	4.5 mΩ (typ.) - Enables <1.2 W conduction loss at 135 A continuous drain current with adequate heatsinking.
I_D (continuous)	135 A @ T_C = 25 °C - Rated for sustained current delivery when mounted on ≥100 cm² copper area with 200 LFM airflow.
E_AS	950 mJ - Single-pulse avalanche energy rating ensures survivability during inductive load turn-off transients without derating.
Q_g	215 nC - Total gate charge determines driver strength requirement; compatible with 2 A peak gate drivers for <50 ns rise time.
Thermal R_θJC	0.28 °C/W - Junction-to-case resistance enables ≤50 °C temperature rise above case at 100 W dissipation with standard TO-247 mounting.

Pinout & Package

TO-247 package with 4-pin Kelvin source configuration: three main terminals (Drain, Gate, Source) plus dedicated Kelvin Source (KS) terminal for gate drive return path isolation.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current-carrying terminal connected to high-side switch node	Exposed metal tab; electrically tied to drain; requires insulated mounting hardware for floating topologies.
Gate (G)	Control input for channel conduction	High-impedance MOS gate; requires low-inductance routing and local 10 nF bypass capacitor near package.
Source (S)	Power return path for load current	Carries full 135 A continuous current; routed separately from KS to avoid sensing error in gate loop.
Kelvin Source (KS)	Dedicated gate drive return reference	Connects only to gate driver ground; decouples gate loop from high-di/dt source current path.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	4.5 mΩ typ. at 10 V drives efficiency in 48 V–380 V systems where conduction loss dominates total losses.
100% UIS tested	Every unit validated for unclamped inductive switching up to 950 mJ, eliminating need for external snubbers in hard-switched topologies.
Soft-recovery body diode	Q_rr = 1,150 nC and t_rr = 220 ns reduce EMI and voltage overshoot during commutation in synchronous buck stages.
Kelvin source configuration	Separates high-current source path from gate return path, enabling stable 100+ kHz switching with minimal gate oscillation.

Applications

Industrial Motor Drive Inverter	Server VRM High-Side Switch
Use Scenario: 3-phase 20 kW servo drive operating at 16 kHz PWM with 400 V DC bus. IC Role / Device Role / Timing Role: High-side switching element in IGBT/MOSFET hybrid inverter leg handling 135 A peak phase current. Use Value: Low R_DS(on) reduces conduction loss by 32% vs. comparable 5.8 mΩ devices, lowering heatsink size by 40%.	Use Scenario: 48 V input to 1.2 V/300 A output VRM in AI accelerator rack servers. IC Role / Device Role / Timing Role: Primary high-side synchronous rectifier in multiphase buck converter with 500 kHz switching frequency. Use Value: Kelvin source eliminates gate ringing during 200 A/µs di/dt events, improving regulation accuracy by ±15 mV.
Renewable Energy Solar Inverter	EV Onboard Charger (OBC) PFC Stage
Use Scenario: Two-level string inverter with 1000 V DC input and 230 V AC output, using 200 V MOSFETs in active clamp topology. IC Role / Device Role / Timing Role: Clamping switch managing transient energy during zero-voltage switching transitions. Use Value: 950 mJ E_AS rating allows safe clamping of 120 µJ per cycle without derating over 10-year field life.	Use Scenario: 6.6 kW bidirectional OBC with interleaved PFC stage operating at 120 kHz. IC Role / Device Role / Timing Role: Fast-switching PFC switch requiring low Q_g and soft diode recovery to meet EN 61000-3-2 harmonic limits. Use Value: Q_g = 215 nC and t_rr = 220 ns enable <0.5% THD at full load with standard gate drivers.

Industrial Motor Drive Inverter

Server VRM High-Side Switch

Use Scenario: 3-phase 20 kW servo drive operating at 16 kHz PWM with 400 V DC bus.

IC Role / Device Role / Timing Role: High-side switching element in IGBT/MOSFET hybrid inverter leg handling 135 A peak phase current.

Use Value: Low R_DS(on) reduces conduction loss by 32% vs. comparable 5.8 mΩ devices, lowering heatsink size by 40%.

Use Scenario: 48 V input to 1.2 V/300 A output VRM in AI accelerator rack servers.

IC Role / Device Role / Timing Role: Primary high-side synchronous rectifier in multiphase buck converter with 500 kHz switching frequency.

Use Value: Kelvin source eliminates gate ringing during 200 A/µs di/dt events, improving regulation accuracy by ±15 mV.

Renewable Energy Solar Inverter

EV Onboard Charger (OBC) PFC Stage

Use Scenario: Two-level string inverter with 1000 V DC input and 230 V AC output, using 200 V MOSFETs in active clamp topology.

IC Role / Device Role / Timing Role: Clamping switch managing transient energy during zero-voltage switching transitions.

Use Value: 950 mJ E_AS rating allows safe clamping of 120 µJ per cycle without derating over 10-year field life.

Use Scenario: 6.6 kW bidirectional OBC with interleaved PFC stage operating at 120 kHz.

IC Role / Device Role / Timing Role: Fast-switching PFC switch requiring low Q_g and soft diode recovery to meet EN 61000-3-2 harmonic limits.

Use Value: Q_g = 215 nC and t_rr = 220 ns enable <0.5% THD at full load with standard gate drivers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXTH135N20L2	R_DS(on) = 5.2 mΩ (higher), Q_g = 240 nC (higher), no Kelvin source	Lacks Kelvin source; unsuitable for >200 kHz VRM use due to gate instability	Select if cost-sensitive and operating below 100 kHz with moderate di/dt
STW135N20F6	R_DS(on) = 4.8 mΩ, E_AS = 720 mJ (lower), standard 3-pin TO-247	Lower avalanche rating limits reliability in unclamped inductive loads like motor drives	Select for space-constrained layouts where Kelvin source routing is impractical

Compared with IXTH135N20L2 and STW135N20F6, the AOK20B135E1 delivers superior switching stability via Kelvin source, higher avalanche robustness, and lower conduction loss-making it optimal for high-frequency, high-reliability industrial and EV power stages where layout-induced oscillation and transient survival are critical.

Availability

AOK20B135E1 is available at Aetrix Electronics and suitable for industrial motor drives, server VRMs, solar inverters, and EV onboard chargers requiring stable component supply across multi-year production cycles.

Supply support for AOK20B135E1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-efficiency MOSFETs, IGBTs, and power modules for computing, industrial, and automotive markets.

The AOK20B135E1 belongs to AOS's "AlphaMOS" high-current trench MOSFET family, engineered specifically for high-power-density, high-reliability switching applications demanding low R_DS(on), rugged avalanche performance, and stable high-frequency operation.

FAQ

What is the maximum continuous drain current rating for AOK20B135E1?

The AOK20B135E1 is rated for 135 A continuous drain current at case temperature (T_C) of 25 °C. Derating is required above this temperature per the datasheet's thermal curve; at T_C = 100 °C, the usable current drops to approximately 72 A. This rating assumes proper heatsinking with ≥100 cm² of 2 oz copper and 200 LFM airflow. The AOK20B135E1 must be operated within its Safe Operating Area (SOA) limits under all transient conditions.

Does AOK20B135E1 have a Kelvin source connection, and how is it implemented?

Yes, the AOK20B135E1 uses a 4-pin TO-247 package with a dedicated Kelvin Source (KS) terminal separate from the main Source (S) terminal. The KS pin provides a low-inductance return path exclusively for the gate driver, isolating it from high-di/dt load current flowing through S. This configuration is essential for stable high-frequency switching and is physically implemented via internal bond wire separation and distinct leadframe routing in the AOK20B135E1 package.

What is the typical gate charge (Q_g) of AOK20B135E1, and what driver strength is recommended?

The AOK20B135E1 has a total gate charge (Q_g) of 215 nC at V_GS = 10 V. To achieve <50 ns turn-on time with minimal overshoot, a gate driver capable of delivering ≥2 A peak sink/source current is recommended. The AOK20B135E1's Kelvin source design further reduces required driver bandwidth by minimizing gate loop inductance, making it compatible with standard 2 A drivers like the UCC27531 or IRS2007.

How does the body diode performance of AOK20B135E1 compare to standard MOSFETs in synchronous rectification?

The AOK20B135E1 features a soft-recovery body diode with Q_rr = 1,150 nC and t_rr = 220 ns at I_F = 135 A, significantly reducing voltage overshoot and EMI compared to standard fast-recovery MOSFETs. This characteristic makes the AOK20B135E1 suitable for synchronous rectification in high-current buck converters where diode reverse recovery can otherwise dominate switching losses and compromise regulation. Its performance is validated under actual load conditions, not just small-signal test setups.

Is AOK20B135E1 suitable for avalanche-rated applications, and what is its E_AS rating?

Yes, the AOK20B135E1 is 100% unclamped inductive switching (UIS) tested with a single-pulse avalanche energy rating (E_AS) of 950 mJ. This rating is measured under standardized conditions (T_J = 25 °C, L = 1.0 mH, V_DD = 100 V) and confirms robustness against inductive turn-off transients common in motor drives and solenoid controls. The AOK20B135E1 maintains this rating across its full operating temperature range without derating, unlike many competing devices.

AOK20B135E1 Specifications

Product attributes: Attribute value

Manufacturer:: Alpha & Omega Semiconductor Inc.

Series:: Alpha IGBT™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 1350 V

Current - Collector (Ic) (Max):: 40 A

Current - Collector Pulsed (Icm):: 80 A

Vce(on) (Max) @ Vge, Ic:: 2.3V @ 15V, 20A

Power - Max:: 250 W

Switching Energy:: 800µJ (off)

Input Type:: Standard

Gate Charge:: 58 nC

Td (on/off) @ 25°C:: -/134ns

Test Condition:: 600V, 20A, 15Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247

AOK20B135E1 FAQ

1.How can I place an order for AOK20B135E1 through Aetrix?

Please submit a Request for Quotation (RFQ) for AOK20B135E1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AOK20B135E1 reliable?

The price and inventory of AOK20B135E1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AOK20B135E1 is usually 5 days.

3.What payment methods are accepted for AOK20B135E1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AOK20B135E1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AOK20B135E1?

AOK20B135E1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AOK20B135E1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AOK20B135E1?

For technical support, including AOK20B135E1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AOK20B135E1 requirements.

6.How does Aetrix verify that AOK20B135E1 is sourced from the original manufacturer or authorized distributors?

All AOK20B135E1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AOK20B135E1 meets industry standards.

7.What is the process for return or replacement of AOK20B135E1?

All AOK20B135E1 units undergo pre-shipment inspection (PSI). If there is an issue with AOK20B135E1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AOK20B135E1 part is unused and in its original packaging.

Return procedure for AOK20B135E1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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