Alpha & Omega Semiconductor Inc. AOK40B65H2AL

Overview

AOK40B65H2AL from Alpha & Omega Semiconductor is a 650 V, 40 A trench-gate field-stop IGBT with integrated soft/fast recovery anti-parallel diode in TO-247 package. It delivers 2.05 V V_CE(sat) at T_J = 25°C and 40 A, 1.71 mJ total switching energy at 150°C, and 315 ns diode reverse recovery time - optimized for high-frequency UPS inverters and welding equipment.

For engineers reviewing the AOK40B65H2AL datasheet, pinout, applications, or equivalent options, key selection criteria include its 650 V blocking capability, 40 A continuous collector current at T_C = 100°C, low E_off (0.54 mJ), soft diode recovery (S factor > 20), and thermal resistance R_θJC = 0.48 °C/W for IGBT and 1.6 °C/W for diode.

Technical Context

The AOK40B65H2AL uses AlphaIGBT™ trench-gate field-stop architecture to achieve fast turn-off (t_D(off) = 117 ns) with low E_off and softness. Its co-packaged diode features controlled dI/dt-dependent t_rr (315–413 ns) and Q_rr (0.7–1.2 mC), enabling reduced voltage overshoot and EMI in hard-switched topologies.

It operates with ±30 V gate-emitter voltage rating, 4.7 V threshold voltage (V_GE(th)), and exhibits stable transconductance (g_FS = 24 S). Thermal design is supported by separate junction-to-case thermal resistances: 0.48 °C/W for IGBT and 1.6 °C/W for diode - critical for dual-thermal-path layout planning.

Key Specifications

Pinout & Package

TO-247 package with 3-pin through-hole configuration: Collector (C), Gate (G), Emitter (E). Case material is epoxy-molded thermoset with tin-plated copper leads. Maximum lead temperature is 260°C for 5 seconds at 1/8" from case.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Compared with IXGN40N60A3 and IKP40N65ES5, the AOK40B65H2AL provides superior softness (S >20), lower conduction loss (2.05 V), and co-packaged diode integration - making it optimal for space-constrained, high-E_mi-sensitive 20–50 kHz inverter designs.

Availability

AOK40B65H2AL is available at Aetrix Electronics and suitable for welding machines, UPS inverters, and solar string inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial production programs.

Supply support for AOK40B65H2AL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-efficiency MOSFETs, IGBTs, and power modules for industrial, computing, and consumer applications.

The AOK40B65H2AL belongs to AOS' AlphaIGBT™ family, engineered specifically for high-frequency, high-reliability inverter applications demanding low switching loss, soft recovery, and robust thermal performance.

FAQ

What is the maximum continuous collector current rating for AOK40B65H2AL at case temperature 100°C?

The AOK40B65H2AL is rated for 40 A continuous collector current at T_C = 100°C, as specified in its Absolute Maximum Ratings table. This rating assumes proper heatsinking and adherence to the SOA curve - exceeding this current without thermal derating risks junction temperature exceeding 150°C. The AOK40B65H2AL maintains stable V_CE(sat) up to this condition.

Does AOK40B65H2AL include an integrated diode, and what are its key recovery characteristics?

Yes, the AOK40B65H2AL integrates a soft and fast recovery anti-parallel diode. At T_J = 25°C and I_F = 20 A, it achieves t_rr = 315 ns, Q_rr = 0.7 mC, and I_rm = 4.7 A, with a softness factor (S = t_a/t_b) >20. These values improve significantly at higher temperatures - t_rr rises to 413 ns at 150°C, ensuring predictable behavior across operating range. The AOK40B65H2AL diode is not a separate component but monolithically co-packaged.

What is the gate-emitter threshold voltage (V_GE(th)) range for AOK40B65H2AL, and how does it vary with temperature?

The AOK40B65H2AL has a gate-emitter threshold voltage of 4.7 V (typical) at T_J = 25°C, with a maximum of 10 V. It decreases with rising temperature - dropping to ~5 V at 125°C and ~3 V at 150°C - enabling inherent current limiting at high junction temperatures. This negative temperature coefficient supports robust short-circuit protection when used with appropriate gate drive clamping. The AOK40B65H2AL's V_GE(th) stability is confirmed across its full -55°C to 150°C operating range.

Can AOK40B65H2AL be used in parallel configurations, and what design considerations apply?

Yes, the AOK40B65H2AL supports paralleling due to its positive temperature coefficient of V_CE(sat), which promotes current sharing. Key requirements include matched gate drive impedance (<±5% variation), symmetrical PCB layout (equal trace length/inductance), and individual gate resistors (7.5 Ω typical) to damp oscillation. Thermal coupling between devices must also be uniform. The AOK40B65H2AL's 0.48 °C/W R_θJC simplifies thermal balancing in multi-device modules.

What is the recommended gate resistor value for AOK40B65H2AL in a 400 V, 40 A inverter application at 150°C junction temperature?

A 7.5 Ω gate resistor is validated in the AOK40B65H2AL datasheet for V_GE = 15 V, V_CC = 400 V, I_C = 40 A, and T_J = 150°C - yielding t_D(off) = 133 ns and E_off = 0.78 mJ. Lower values (e.g., 5 Ω) increase di/dt and EMI risk; higher values (e.g., 15 Ω) raise E_off by ~25%. The AOK40B65H2AL's gate charge (Q_g = 61 nC) makes 7.5 Ω optimal for balancing speed, loss, and robustness.