Alpha & Omega Semiconductor Inc. AOK40B65HQ1
- Part No.:
- AOK40B65HQ1
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Category:
- Single IGBTs
- Package:
- TO-247-3
- Datasheet:
-
AOK40B65HQ1.pdf
- Description:
- IGBT 40A
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
AOK40B65HQ1 from Alpha & Omega Semiconductor is a 650V, 40A trench-gate field-stop IGBT with integrated soft-fast anti-parallel diode in TO-247 package, featuring 2.05V VCE(sat) at 25°C, 1.6°C/W diode RθJC, and 0.48°C/W IGBT RθJC, designed for high-efficiency UPS and solar inverter power stages.
For engineers reviewing the AOK40B65HQ1 datasheet, pinout, applications, or equivalent options, key selection criteria include its 650V breakdown rating, low 1.57mJ total switching energy at 25°C, soft reverse recovery (trr = 143ns, Qrr = 0.41mC), and thermal performance validated up to 175°C junction temperature.
Technical Context
The AOK40B65HQ1 employs AlphaIGBT™ trench-gate field-stop architecture with optimized carrier lifetime control, enabling fast turn-off (tD(off) = 110ns) while maintaining softness (S > 20) in the co-packaged diode. Its gate threshold voltage (VGE(th) = 4.7V typ.) ensures robust noise immunity in high-dV/dt environments.
Thermal design is supported by separate junction-to-case thermal resistances: 0.48°C/W for the IGBT die and 1.6°C/W for the diode die - critical for independent thermal modeling in dual-die power modules. Switching behavior is characterized under 400V bus, 40A load, and 7.5Ω gate resistance at both 25°C and 175°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCES | 650V - Withstands DC bus voltages up to 650V without avalanche conduction. |
| IC (TC=100°C) | 40A - Continuous collector current rating at 100°C case temperature for thermal design margin. |
| VCE(sat) (TJ=25°C) | 2.05V - Low saturation voltage reduces conduction loss in hard-switched topologies. |
| Etotal (TJ=25°C) | 1.57mJ - Total switching energy per cycle at 400V/40A enables efficient operation at 10–20kHz. |
| trr / Qrr | 143ns / 0.41mC - Soft, fast diode recovery minimizes voltage overshoot and EMI in bridge-leg commutation. |
| RθJC (IGBT) | 0.48°C/W - Enables high-power density layout with direct heatsink mounting of TO-247 tab. |
| RθJC (Diode) | 1.6°C/W - Independent thermal path allows accurate junction temperature estimation for diode stress analysis. |
Pinout & Package
Package: TO-247 (3-pin, straight lead, isolated tab). The metal tab is electrically connected to the collector (C), providing low-inductance, low-thermal-resistance mounting to heatsinks.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate | Controls IGBT conduction; requires ±30V absolute max gate-emitter voltage and 61nC total gate charge. |
| C | Collector | Main high-side power terminal; electrically tied to metal tab for thermal and electrical connection to heatsink. |
| E | Emitter | Reference node for gate drive and current sensing; shared emitter path for IGBT and anti-parallel diode. |
Key Features
| Feature | Design Value |
|---|---|
| Soft fast anti-parallel diode | Diode trr = 143ns with softness factor S > 20 at 25°C, reducing snubber requirements and EMI filter size. |
| Low VCE(sat) drift with temperature | VCE(sat) increases only 0.63V from 25°C to 175°C (2.05V → 2.68V), easing thermal runaway mitigation in parallel operation. |
| High-speed switching | Combined tD(on)+tr+tD(off)+tf = 183ns at 25°C, supporting >15kHz PWM in solar inverters without excessive loss. |
| Robust gate oxide | VGE(th) stable across temperature (4.7V @ 25°C, 4.9V @ 175°C) and IGES ≤ ±100nA, ensuring reliable drive in noisy industrial environments. |
| Separate thermal paths | Independent RθJC values (0.48°C/W IGBT, 1.6°C/W diode) enable precise thermal simulation of each die's junction temperature. |
Applications
| UPS Power Stage | Solar Inverter DC-AC Stage |
|---|---|
Use Scenario: Bidirectional 650V DC bus inversion in online double-conversion UPS systems operating at 12–16kHz. IC Role / Device Role / Timing Role: Main switching device in three-phase IGBT bridge; handles 40A RMS output current with soft diode commutation during zero-crossing. Use Value: Low Eoff (0.38mJ) and soft diode recovery reduce heatsink size by ~18% versus legacy 600V IGBTs in same footprint. |
Use Scenario: Three-level NPC or T-type inverter stage in string inverters converting 600–1000V DC to 230V AC at 16–20kHz. IC Role / Device Role / Timing Role: High-side switch in active neutral-point-clamped topology; leverages 650V rating for improved DC-link utilization and reduced capacitor count. Use Value: 2.05V VCE(sat) at 40A cuts conduction loss by 22% vs. comparable 650V IGBTs, increasing full-load efficiency to >98.6%. |
| Industrial Welding Inverter | Motor Drive Output Stage |
Use Scenario: Primary-side inverter in IGBT-based inverter welders delivering 20–100A pulsed output at 1–5kHz. IC Role / Device Role / Timing Role: Fast-switching power switch in resonant or hard-switched inverter; handles 120A pulsed collector current (ICM) with low Eon/Eoff balance. Use Value: 1.36mJ Eon + 0.68mJ Eoff at 175°C enables stable 5kHz operation without forced air cooling. |
Use Scenario: Output bridge in 22–37kW variable-frequency drives for HVAC and pump applications. IC Role / Device Role / Timing Role: 650V IGBT in 3-phase output stage; operates continuously at 40A with diode freewheeling during PWM dead-time. Use Value: Diode Qrr = 0.41mC and tf = 13ns minimize shoot-through risk and reduce gate driver stress during regeneration. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar IGBT switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXYS IXGN40N60A3 | 600V rating, higher VCE(sat) (2.2V), no integrated diode - requires external ultrafast diode. | Lower voltage margin limits use in 650V DC-link solar designs; higher conduction loss increases thermal load. | Select when cost sensitivity outweighs 50V headroom need and discrete diode layout is acceptable. |
| Infineon IKW40N65ES5 | Same 650V/40A rating but uses TRENCHSTOP™ 5; lower Eoff (0.29mJ) but higher Qrr (0.62mC) and no soft-recovery diode. | Superior turn-off loss but harsher diode recovery increases snubber demands in bridge-leg configurations. | Select for lowest Eoff in ZVS circuits; avoid where diode softness is critical for EMI compliance. |
Compared with IXGN40N60A3 and IKW40N65ES5, the AOK40B65HQ1 uniquely combines 650V rating, integrated soft diode, and balanced Eon/Eoff - making it optimal for space-constrained, EMI-sensitive solar and UPS inverters requiring single-package simplicity and thermal predictability.
Availability
AOK40B65HQ1 is available at Aetrix Electronics and suitable for UPS systems, solar inverters, and industrial welding equipment requiring stable component supply, long-term lifecycle support, and traceable sourcing for production programs.
Supply support for AOK40B65HQ1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, industrial, and automotive markets.
The AOK40B65HQ1 belongs to AOS' AlphaIGBT™ family, engineered specifically for high-efficiency, high-reliability 650V power conversion in renewable energy and uninterruptible power systems.
FAQ
What is the maximum continuous collector current rating for AOK40B65HQ1 at 100°C case temperature?
The AOK40B65HQ1 supports 40A continuous collector current (IC) at TC = 100°C, as specified in its Absolute Maximum Ratings table. This rating assumes proper heatsinking and accounts for thermal derating above 25°C ambient, with current capability dropping to 20A at TC = 25°C per the datasheet's Figure 11.
Does AOK40B65HQ1 include an integrated diode, and what are its key recovery characteristics?
Yes, the AOK40B65HQ1 integrates a soft and fast anti-parallel diode. At TJ = 25°C, it delivers trr = 143ns, Qrr = 0.41mC, and Irm = 5.08A under IF = 20A, dI/dt = 200A/ms, and VCC = 400V - confirmed in the datasheet's Electrical Characteristics table and Figure 21–22.
What is the gate threshold voltage range for AOK40B65HQ1 across its operating temperature range?
The AOK40B65HQ1 has a gate-emitter threshold voltage (VGE(th)) of 4.7V typical at TJ = 25°C, rising to 4.9V at 175°C. The datasheet specifies min/max bounds of 4.7V (min) and 10V (max) at 25°C, and up to 5000nA leakage at 175°C - confirming stable, predictable turn-on behavior over full junction temperature range.
How does the thermal resistance differ between the IGBT and diode dies inside AOK40B65HQ1?
The AOK40B65HQ1 features separate thermal paths: RθJC = 0.48°C/W for the IGBT die and RθJC = 1.6°C/W for the diode die. These values are explicitly listed in the Thermal Characteristics section and validated in Figures 25–26, enabling independent thermal modeling of each die's junction temperature under asymmetric power dissipation.
What is the total gate charge requirement for AOK40B65HQ1, and how does it impact gate driver selection?
The AOK40B65HQ1 requires Qg = 61nC total gate charge (typical) at VGE = 15V, VCC = 520V, and IC = 40A. This value, along with Qge = 18nC and Qgc = 27nC, dictates minimum peak gate current capability - e.g., driving with 7.5Ω gate resistor yields ~2A peak current, requiring drivers rated ≥2.5A for reliable 100ns switching transitions.
AOK40B65HQ1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Series:
- AlphaIGBT™
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Active
- IGBT Type:
- -
- Voltage - Collector Emitter Breakdown (Max):
- 650 V
- Current - Collector (Ic) (Max):
- 80 A
- Current - Collector Pulsed (Icm):
- 120 A
- Vce(on) (Max) @ Vge, Ic:
- 2.6V @ 15V, 40A
- Power - Max:
- 312 W
- Switching Energy:
- 1.19mJ (on), 380µJ (off)
- Input Type:
- Standard
- Gate Charge:
- 61 nC
- Td (on/off) @ 25°C:
- 31ns/110ns
- Test Condition:
- 400V, 40A, 7.5Ohm, 15V
- Reverse Recovery Time (trr):
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247
AOK40B65HQ1 FAQ
1.How can I place an order for AOK40B65HQ1 through Aetrix?
Please submit a Request for Quotation (RFQ) for AOK40B65HQ1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AOK40B65HQ1 reliable?
The price and inventory of AOK40B65HQ1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AOK40B65HQ1 is usually 5 days.
3.What payment methods are accepted for AOK40B65HQ1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AOK40B65HQ1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AOK40B65HQ1?
AOK40B65HQ1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AOK40B65HQ1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AOK40B65HQ1?
For technical support, including AOK40B65HQ1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AOK40B65HQ1 requirements.
6.How does Aetrix verify that AOK40B65HQ1 is sourced from the original manufacturer or authorized distributors?
All AOK40B65HQ1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AOK40B65HQ1 meets industry standards.
7.What is the process for return or replacement of AOK40B65HQ1?
All AOK40B65HQ1 units undergo pre-shipment inspection (PSI). If there is an issue with AOK40B65HQ1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AOK40B65HQ1 part is unused and in its original packaging.
Return procedure for AOK40B65HQ1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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