Alpha & Omega Semiconductor Inc. AOK50B65H1

Overview

AOK50B65H1 from Alpha & Omega Semiconductor is a 650V, 50A trench-gate field-stop IGBT with integrated soft/fast anti-parallel diode, designed for high-frequency switching in motor drives and solar inverters. It delivers V_CE(sat) = 1.9 V at T_J = 25°C, t_f = 32 ns, E_off = 0.85 mJ (T_J = 175°C), and short-circuit withstand time of 5 µs.

For engineers reviewing the AOK50B65H1 datasheet, pinout, applications, or equivalent options, key selection criteria include its 650V blocking capability, low conduction loss at 50A, soft diode recovery (t_rr = 261 ns, Q_rr = 0.9 mC), short-circuit ruggedness, and TO-247 package thermal performance (R_θJC = 0.4°C/W).

Technical Context

The AOK50B65H1 uses Alpha's αIGBT TM technology with field-stop trench gate structure to achieve high dI/dt controllability and low E_on/E_off trade-off. Its integrated diode features soft reverse recovery (softness factor S > 10) and low Q_rr, minimizing voltage overshoot and EMI in hard-switched topologies.

Rated for continuous operation up to T_J = 175°C, it supports 150 A pulsed collector current and 100 A diode pulsed current under TJmax-limited conditions. Gate threshold voltage V_GE(th) = 4.9 V (typ) ensures noise immunity, while g_FS = 38 S enables fast turn-on with moderate gate drive strength.

Key Specifications

Pinout & Package

Package: TO-247 (3-pin, straight lead, non-isolated). Case material: epoxy-molded thermoset with copper baseplate for low R_θJC.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Compared with IXGN50N60B3 and IKW50N65ES5, the AOK50B65H1 offers the lowest combined conduction and switching loss at 175°C, fastest diode recovery, and smallest R_θJC, making it optimal for compact, high-efficiency 10–30 kW inverters where thermal headroom and EMI are critical.

Availability

AOK50B65H1 is available at Aetrix Electronics and suitable for welding machines, motor drives, and UPS & solar inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial production programs.

Supply support for AOK50B65H1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power modules for industrial, computing, and consumer applications.

The AOK50B65H1 belongs to AOS' αIGBT™ family, engineered specifically for high-frequency, high-reliability inverter applications demanding low loss, soft switching behavior, and robust short-circuit tolerance.

FAQ

What is the maximum continuous collector current rating for AOK50B65H1 at case temperature 100°C?

The AOK50B65H1 has a continuous collector current rating of 50 A at T_C = 100°C, as specified in its Absolute Maximum Ratings table. This value reflects thermal equilibrium under forced-air or heatsink-cooled conditions and must be derated linearly above 100°C per Figure 11 in the datasheet. Designers should verify actual case temperature via thermal simulation or measurement to ensure safe operation.

Does AOK50B65H1 include an integrated freewheeling diode, and what are its key recovery characteristics?

Yes, the AOK50B65H1 integrates a soft and fast recovery anti-parallel diode. At T_J = 25°C, IF = 50 A, and dI/dt = 200 A/ms, it achieves t_rr = 261 ns, Q_rr = 0.9 mC, and I_rm = 6.3 A. These parameters enable low-voltage overshoot and reduced EMI in inductive switching applications, distinguishing it from discrete IGBT-diode solutions.

What is the short-circuit withstand capability of AOK50B65H1, and under what test conditions is it specified?

The AOK50B65H1 supports a short-circuit withstand time of 5 µs under the conditions V_GE = 15 V, V_CC ≤ 300 V, and T_J ≤ 175°C. This rating assumes clamped inductive fault testing per JEDEC standards and allows time for external protection circuits to respond. The datasheet specifies a maximum of <1000 such events with >1 s interval between occurrences.

What is the gate-emitter threshold voltage range for AOK50B65H1, and how does it vary with temperature?

The AOK50B65H1 has a gate-emitter threshold voltage V_GE(th) of 4.9 V (typical) at T_J = 25°C, with a minimum of 4.0 V and maximum of 5.8 V. As temperature increases to 175°C, V_GE(th) decreases to approximately 3.5 V (min) - a negative temperature coefficient that improves short-circuit safety but requires gate drive design to maintain sufficient overdrive margin across the full operating range.

What thermal resistance values are specified for AOK50B65H1, and how do they impact heatsink selection?

The AOK50B65H1 specifies R_θJC = 0.4°C/W for the IGBT and R_θJC = 1.4°C/W for the diode. These junction-to-case values define the minimum thermal path efficiency required from die to heatsink mounting surface. For a target T_J ≤ 150°C at P_D = 188 W (T_C = 25°C), the total system R_θCA must be ≤ 0.5°C/W - dictating use of high-performance thermal interface materials and finned aluminum heatsinks with ≥200 LFM airflow.