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Microchip Technology APT15GT120BRDQ1G
- Part No.:
- APT15GT120BRDQ1G
- Manufacturer:
- Microchip Technology
- Category:
- Single IGBTs
- Package:
- TO-247-3
- Datasheet:
-
APT15GT120BRDQ1G.pdf
- Description:
- IGBT NPT 1200V 36A TO247
- Quantity:
- Payment:
- Shipping:
Inventory:7,660
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Product details
Overview
APT15GT120BRDQ1G from Microchip is a 1200 V, 15 A co-packaged IGBT with integrated ultra-fast anti-parallel DQ series diode in TO-247 package. It features 3.3 V typical VCE(on) at 25°C, 11 A maximum continuous collector current at TC = 100°C, and is rated for hard-switched operation up to 50 kHz in high-voltage industrial motor drives and UPS systems.
For engineers reviewing the APT15GT120BRDQ1G datasheet, APT15GT120BRDQ1G pinout, APT15GT120BRDQ1G application, or APT15GT120BRDQ1G equivalent, key selection criteria include its co-packaged DQ diode's soft recovery, 1200 V blocking capability, 50 kHz switching envelope, and suitability for medium-power DC-AC conversion where conduction efficiency and diode commutation ruggedness are critical.
Technical Context
This device belongs to Microchip's POWER MOS 7™ IGBT family using Punch-Through (PT) technology. Its co-packaged DQ diode provides fast, soft reverse recovery with low Qrr, enabling reliable operation in inductive load switching and reducing voltage overshoot during turn-off.
The IGBT gate threshold is optimized for standard ±15 V drive, with low gate charge (QG = 95 nC typical) and robust short-circuit withstand time (SCWT). Thermal performance is enhanced by the isolated TO-247 package with low RθJC = 1.8°C/W.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCE(sus) | 1200 V - Withstands DC bus voltages up to 1200 V in industrial inverters and HVDC links. |
| IC (cont) @ TC = 100°C | 11 A - Sustains 11 A continuous collector current under heatsink-limited thermal conditions. |
| VCE(on) @ IC = 15 A | 3.3 V typical - Low conduction loss enables >98% efficiency in 10–20 kW motor drive stages. |
| QG | 95 nC typical - Reduces gate driver power requirement and enables clean, fast switching transitions. |
| fmax (hard switch) | 50 kHz - Supports high-frequency PWM in compact UPS and solar string inverters without excessive losses. |
| SCWT | 10 µs @ TJ = 150°C - Withstands short-circuit events long enough for protection circuitry to respond. |
| DQ diode trr | 125 ns typical - Minimizes commutation losses and EMI in bridge-leg freewheeling paths. |
Pinout & Package
APT15GT120BRDQ1G is housed in a standard TO-247 package with electrically isolated mounting base and 3-pin configuration (Collector, Gate, Emitter), suitable for bolt-down heatsinking and high-voltage isolation requirements.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Tab) | Collector (C) | High-side switching node; connected directly to heatsink via isolated mounting surface. |
| Pin 2 | Gate (G) | Control input requiring ±15 V drive; low QG enables use of cost-effective gate drivers. |
| Pin 3 | Emitter (E) | Low-side reference; shared emitter path for IGBT and co-packaged DQ diode. |
Key Features
| Feature | Design Value |
|---|---|
| Co-packaged DQ diode | Ultra-fast, soft-recovery Si diode integrated in same TO-247 housing-eliminates discrete diode layout, reduces parasitic inductance, and ensures matched thermal tracking. |
| Punch-Through (PT) IGBT structure | Optimized carrier lifetime for balanced conduction/switching trade-off-delivers lower VCE(on) than NPT at 1200 V while maintaining adequate SCWT. |
| Isolated TO-247 package | Electrically insulated metal tab supports direct heatsink mounting without insulating pads-reduces thermal resistance and simplifies mechanical assembly. |
| Rated for 50 kHz hard switching | Validated switching performance up to 50 kHz at full rated current-enables higher PWM resolution and smaller passive components in motor control designs. |
| 1200 V blocking voltage | Supports 800 V DC bus systems with 50% voltage margin-meets IEC 61800-5-1 reinforced insulation requirements for industrial drives. |
Applications
| Industrial Motor Drives | Uninterruptible Power Supplies (UPS) |
|---|---|
Use Scenario: 3-phase inverter stage in 10–15 kW HVAC compressors and pump drives operating from 690 V AC mains via rectified DC bus. IC Role / Device Role / Timing Role: Main switching device in each half-bridge leg; handles bidirectional energy flow during regenerative braking and PWM modulation at 8–16 kHz. Use Value: Co-packaged DQ diode ensures low-loss freewheeling with minimal voltage spike, extending IGBT lifetime under frequent start-stop cycling. |
Use Scenario: Online double-conversion UPS delivering clean 230 V AC output from 400–600 V DC battery bank during grid failure. IC Role / Device Role / Timing Role: Inverter-stage IGBT in full-bridge topology; switches at 12–20 kHz to synthesize sinusoidal output with low THD. Use Value: 1200 V rating accommodates peak DC bus transients up to 900 V, eliminating need for external snubbers in high-reliability backup systems. |
| Solar String Inverters | Induction Heating Systems |
Use Scenario: DC-AC stage in 12–15 kW photovoltaic string inverters interfacing with 1000 V DC PV arrays. IC Role / Device Role / Timing Role: High-side switch in H-bridge configuration; operates with unipolar PWM and active clamp circuits. Use Value: Low VCE(on) and soft-recovery DQ diode reduce conduction and switching losses, improving inverter efficiency above 98.2% at rated power. |
Use Scenario: Resonant inverter stage in 10–12 kW induction cooktops and industrial heating units operating at 20–50 kHz. IC Role / Device Role / Timing Role: Half-bridge switch driving series-resonant LC tank; requires precise timing control and high dv/dt immunity. Use Value: 50 kHz hard-switching capability and robust UIS rating enable stable operation under load mismatch and cold-start conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar IGBT + anti-parallel diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| APT25GP120BDQ1G | Higher IC rating (25 A), identical 1200 V rating and co-packaged DQ diode; larger die size increases RθJC to 1.5°C/W. | Better suited for 20–30 kW designs requiring headroom; not drop-in due to higher gate charge (135 nC) and thermal footprint. | Select when system-level derating or future power scalability is required; requires gate driver and heatsink revalidation. |
| APT15GN120BDQ1G | Field Stop technology; lower VCE(on) (1.7 V), shorter SCWT (5 µs), same TO-247 package and DQ diode. | Optimized for higher efficiency at light loads but less tolerant of short-circuit faults; preferred in high-efficiency UPS where protection speed is prioritized. | Choose for efficiency-critical applications with fast-acting overcurrent detection; verify fault-clearance timing compatibility. |
Compared with APT15GT120BRDQ1G, APT25GP120BDQ1G offers higher current headroom at the cost of increased gate drive demand, while APT15GN120BDQ1G delivers superior conduction efficiency and faster switching but reduced short-circuit ruggedness-making each suitable for distinct design priorities in 1200 V inverter systems.
Availability
APT15GT120BRDQ1G is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, and solar string inverters requiring stable component supply across multi-year production cycles.
Supply support for APT15GT120BRDQ1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microchip Technology Inc. is a leading provider of microcontroller, analog, FPGA, and power semiconductor solutions, with global manufacturing and quality systems certified to ISO 9001 and AEC-Q101 for automotive-grade discretes.
APT15GT120BRDQ1G belongs to Microchip's POWER MOS 7™ IGBT family, engineered specifically for high-reliability, medium-power industrial inverters where co-packaged diode integration, 1200 V blocking, and 50 kHz hard-switching capability are essential.
FAQ
What is the maximum continuous collector current for APT15GT120BRDQ1G at case temperature 100°C?
The APT15GT120BRDQ1G is rated for 11 A maximum continuous collector current at TC = 100°C, as specified in Microchip's official datasheet. This value reflects thermal limitations of the TO-247 package and must be used with appropriate heatsinking to maintain junction temperature below 150°C under steady-state operation.
Does APT15GT120BRDQ1G include an integrated diode, and what type is it?
Yes, APT15GT120BRDQ1G integrates an ultra-fast, soft-recovery "DQ" series silicon diode in the same TO-247 package. This diode is co-packaged with the IGBT and shares the same thermal environment, providing matched characteristics and eliminating layout-induced parasitics in bridge-leg configurations.
What is the recommended gate drive voltage range for APT15GT120BRDQ1G?
APT15GT120BRDQ1G is designed for standard ±15 V gate drive: +15 V for turn-on and –15 V for turn-off. Operating outside this range risks incomplete saturation (at < +13 V) or excessive gate oxide stress (at > +18 V), both of which degrade reliability and switching performance.
Can APT15GT120BRDQ1G be used in parallel configurations?
APT15GT120BRDQ1G supports paralleling due to its positive temperature coefficient of VCE(on), which promotes current sharing. However, successful paralleling requires matched gate drive impedance, symmetrical PCB layout, and individual gate resistors-Microchip recommends verifying thermal balance and current distribution under worst-case load conditions.
What is the short-circuit withstand time (SCWT) rating for APT15GT120BRDQ1G?
APT15GT120BRDQ1G has a short-circuit withstand time of 10 µs at TJ = 150°C and VCE = 600 V. This rating assumes proper gate drive and clamped bus voltage; actual safe operating time depends on ambient temperature, heatsink performance, and protection circuit response latency.
APT15GT120BRDQ1G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- Thunderbolt IGBT®
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- IGBT Type:
- NPT
- Voltage - Collector Emitter Breakdown (Max):
- 1200 V
- Current - Collector (Ic) (Max):
- 36 A
- Current - Collector Pulsed (Icm):
- 45 A
- Vce(on) (Max) @ Vge, Ic:
- 3.6V @ 15V, 15A
- Power - Max:
- 250 W
- Switching Energy:
- 585µJ (on), 260µJ (off)
- Input Type:
- Standard
- Gate Charge:
- 105 nC
- Td (on/off) @ 25°C:
- 10ns/85ns
- Test Condition:
- 800V, 15A, 5Ohm, 15V
- Reverse Recovery Time (trr):
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247 [B]
APT15GT120BRDQ1G FAQ
1.How can I place an order for APT15GT120BRDQ1G through Aetrix?
Please submit a Request for Quotation (RFQ) for APT15GT120BRDQ1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for APT15GT120BRDQ1G reliable?
The price and inventory of APT15GT120BRDQ1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for APT15GT120BRDQ1G is usually 5 days.
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Once your APT15GT120BRDQ1G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for APT15GT120BRDQ1G?
For technical support, including APT15GT120BRDQ1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your APT15GT120BRDQ1G requirements.
6.How does Aetrix verify that APT15GT120BRDQ1G is sourced from the original manufacturer or authorized distributors?
All APT15GT120BRDQ1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that APT15GT120BRDQ1G meets industry standards.
7.What is the process for return or replacement of APT15GT120BRDQ1G?
All APT15GT120BRDQ1G units undergo pre-shipment inspection (PSI). If there is an issue with APT15GT120BRDQ1G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The APT15GT120BRDQ1G part is unused and in its original packaging.
Return procedure for APT15GT120BRDQ1G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
APT15GT120BRDQ1G Tags
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