Microchip Technology APT40GR120B

Overview

APT40GR120B from Microsemi is a 1200 V, 40 A ultra-fast Non-Punch-Through (NPT) IGBT with typical V_CE(on) = 2.5 V at 40 A/25°C, 10 μs short-circuit withstand time at 600 V/15 V/125°C, and TO-247 package. It serves as a high-voltage switching device in hard-switched inverters for induction heating and UPS systems.

For engineers reviewing the APT40GR120B datasheet, APT40GR120B pinout, APT40GR120B application, or APT40GR120B equivalent, key selection criteria include its 1200 V blocking rating, low tail current, 50 kHz max switching frequency, R_θJC = 0.25°C/W thermal resistance, and gate charge Q_g = 210 nC - all critical for thermal management and driver design in high-power industrial converters.

Technical Context

This IGBT employs Non-Punch-Through (NPT) silicon technology to deliver rugged short-circuit capability and fast turn-off with minimal tail current. Its dynamic characteristics are specified under clamped inductive switching (JEDEC JESD24-1), with E_off = 906–1650 μJ and E_on2 = 1375–3500 μJ across 25–125°C junction temperatures.

The device features a single-die construction with integrated gate-emitter plateau voltage (V_GEP = 7 V), low leakage (I_CES ≤ 1000 μA at 1200 V/25°C), and RoHS-compliant 100% Sn plating. Gate drive requires ±30 V absolute maximum, with threshold voltage V_GE(TH) = 3–6 V at 25°C.

Key Specifications

Pinout & Package

APT40GR120B uses a TO-247 package with isolated collector tab (heat sink). Pin assignment is standardized: Pin 1 = Gate, Pin 2 = Collector (tab), Pin 3 = Emitter. The collector tab is electrically connected to the internal die collector and serves as primary thermal path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Compared with APT40GR120B, IXGN40N120B3 trades higher conduction loss for lower gate drive demand, while IKW40N120H3 reduces on-state loss but sacrifices short-circuit robustness - making APT40GR120B uniquely balanced for hard-switched, protection-critical applications like induction heating and UPS.

Availability

APT40GR120B is available at Aetrix Electronics and suitable for induction heating inverters, uninterruptible power supplies (UPS), and high-voltage motor drives requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for APT40GR120B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog, mixed-signal, and power devices for aerospace, defense, and industrial markets.

The APT40GR120B belongs to Microsemi's Ultra Fast NPT-IGBT® family, designed specifically for rugged, high-frequency switching in hard-switched industrial inverters where short-circuit withstand, low tail current, and thermal stability are critical.

FAQ

What is the maximum gate-emitter voltage rating for APT40GR120B?

The APT40GR120B has a maximum gate-emitter voltage rating of ±30 V, as specified in the Absolute Maximum Ratings table. Exceeding this limit risks permanent gate oxide damage. For reliable operation, gate drive circuits should clamp V_GE within ±20 V, with 15 V recommended for turn-on and –5 V to –10 V for active Miller clamping during turn-off. This rating applies across the full operating temperature range.

Does APT40GR120B include an anti-parallel diode?

No, the APT40GR120B is a discrete IGBT die in a TO-247 package with no integrated anti-parallel diode. It requires an external fast-recovery or SiC Schottky diode in inductive switching applications. The datasheet explicitly states "Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die," confirming no co-packaged freewheeling diode is present in the APT40GR120B.

What is the thermal resistance from junction to case (R_θJC) for APT40GR120B?

The junction-to-case thermal resistance R_θJC for APT40GR120B is 0.25°C/W, measured under standard mounting conditions with proper thermal interface material and 6.2 N·m screw torque. This value is critical for calculating maximum allowable case temperature when dissipating up to 500 W at T_C = 25°C, and directly impacts heatsink sizing in continuous-duty applications.

Can APT40GR120B be used in parallel configurations?

APT40GR120B supports parallel operation only with careful attention to gate drive matching, emitter degeneration resistors, and symmetrical layout. Its positive V_GE(TH) temperature coefficient (3–6 V at 25°C, decreasing with temperature) provides inherent current sharing stability. However, the datasheet does not specify parallel derating curves or recommend specific gate resistor values - system-level testing is required for each implementation.

What is the short-circuit withstand time (SCWT) condition for APT40GR120B?

The APT40GR120B short-circuit withstand time is 10 μs under the defined test condition: V_CE = 600 V, V_GE = 15 V, and T_C = 125°C. This value assumes clamped inductive fault conditions and is not guaranteed beyond one pulse. Protection circuitry must trigger within this window to prevent thermal runaway, and repeated short-circuit events are not characterized in the datasheet.