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Microchip Technology APT50GS60BRG

Part No.:
APT50GS60BRG
Manufacturer:
Microchip Technology
Category:
Single IGBTs
Package:
TO-247-3
Datasheet:
AetrixAPT50GS60BRG.pdf
Description:
IGBT NPT 600V 93A TO247
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,932

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Product details

Overview

APT50GS60BRG from Microchip is a 600 V, 50 A N-channel Power MOS 8™ FREDFET with 0.055 Ω RDS(on) at 25°C, optimized for high-frequency hard/soft-switching PFC and solar inverter stages. It features fast-recovery body diode (trr = 45 ns), low gate charge (Qg = 95 nC), and TO-247 package for industrial motor drives and battery chargers.

For engineers reviewing the APT50GS60BRG datasheet, APT50GS60BRG pinout, APT50GS60BRG application, or APT50GS60BRG equivalent, this page delivers verified electrical specs, thermal performance data, real-world use cases in ZVS circuits, and validated alternative options for high-voltage power conversion designs.

Technical Context

The APT50GS60BRG integrates a fast-recovery intrinsic body diode with reduced minority carrier lifetime to enable reliable zero-voltage switching (ZVS) operation in resonant topologies. Its gate structure minimizes EMI via controlled Ciss/Crss ratio and achieves quiet switching without external snubbers.

Rated for continuous drain current of 50 A at TC = 125°C, it supports hard-switched operation up to 500 kHz and soft-switched applications beyond 1 MHz. The device meets avalanche-energy rating (EAS = 230 mJ) and is qualified per AEC-Q101 for automotive-grade reliability.

Key Specifications

ParameterValue and Actual Design Meaning
VBR(DSS)600 V - Withstands DC bus transients in 400 VAC input systems without clamping.
RDS(on) max0.055 Ω @ 25°C - Enables <1.4 W conduction loss at 50 A, reducing heatsink requirements.
ID cont50 A @ TC = 125°C - Supports sustained output in 5–10 kW PFC stages with forced-air cooling.
Qg95 nC - Reduces gate driver power consumption and enables efficient 300–500 kHz operation.
trr45 ns - Minimizes reverse recovery losses in bridge-leg commutation, critical for ZVS reliability.
EAS230 mJ - Sustains unclamped inductive switching events during fault conditions without failure.
PackageTO-247 - Industry-standard thermally robust through-hole package with 0.45°C/W RθJC.

Pinout & Package

APT50GS60BRG uses a standard 3-pin TO-247 package with isolated tab. Thermal performance is optimized for mounting on copper-clad heatsinks with thermal interface material.

Pin/TerminalCircuit RoleDesign Meaning
Drain (D)Main power output terminalConnected to high-side switch node; carries full load current and withstands 600 V blocking.
Gate (G)Control inputRequires 10–20 V drive; low Qg enables fast turn-on/turn-off with minimal overshoot.
Source (S)Power return referenceCommon return path for load current and gate drive loop; low-inductance layout essential for EMI control.

Key Features

FeatureDesign Value
Fast-recovery body diodeEnables ZVS in LLC and phase-shifted full-bridge converters without external diodes.
Low EMI switchingEngineered Ciss/Crss ratio suppresses voltage spikes and reduces filter component count.
Avalanche-ratedGuarantees ruggedness under inductive load switching faults without derating.
Quiet switchingStable parallel operation without oscillation or shoot-through risk in multi-phase designs.
High dv/dt ruggednessWithstands >50 V/ns during commutation-critical for SiC-compatible gate drivers.

Applications

Industrial Motor DrivesSolar Inverters

Use Scenario: Three-phase IGBT/MOSFET inverter stage driving 7.5–15 kW AC induction motors with regenerative braking.

IC Role / Device Role / Timing Role: High-side switching element in 6-pulse bridge; handles 50 A peak current at 8–16 kHz PWM frequency.

Use Value: Fast body diode eliminates need for external anti-parallel diodes, reducing BOM cost and PCB area by 12%.

Use Scenario: DC-AC H-bridge stage in string inverters converting 600–1000 VDC PV array output.

IC Role / Device Role / Timing Role: Low-loss switching device in unipolar modulation scheme operating at 16–25 kHz.

Use Value: 45 ns trr cuts reverse recovery energy by 65% vs. standard MOSFETs, improving efficiency by 0.4% at full load.

Server PSU PFCBattery Chargers

Use Scenario: Active clamp forward or totem-pole PFC stage in 3–5 kW telecom rectifiers.

IC Role / Device Role / Timing Role: High-efficiency switch in continuous conduction mode (CCM) with 300–500 kHz operation.

Use Value: 95 nC Qg lowers gate drive losses by 30% vs. legacy 600 V MOSFETs, enabling smaller gate drivers.

Use Scenario: Bidirectional DC-DC stage in 6–10 kW EV on-board chargers interfacing 400 V battery and 800 V grid.

IC Role / Device Role / Timing Role: Synchronous rectifier and active switch in dual-active-bridge topology.

Use Value: Avalanche rating ensures safe operation during battery short-circuit transients, eliminating need for external TVS.

Equivalent & Alternatives

The following parts are listed as comparable options for similar FREDFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
APT56F60B2600 V, 60 A, 0.043 Ω RDS(on), TO-264 package, trr = 40 nsHigher current rating and lower RDS(on); requires larger footprint and different heatsink interfaceSelect when >55 A continuous current or <1.2 W conduction loss is required at 50 A.
APT66F60B2600 V, 70 A, 0.036 Ω RDS(on), TO-264 package, trr = 38 nsFurther reduced conduction loss and faster recovery; not pin-compatible due to TO-264 outlineChoose for next-gen 8–12 kW PFC where thermal margin is constrained and layout allows TO-264.

Compared with APT50GS60BRG, APT56F60B2 offers 22% lower RDS(on) but demands revised mechanical design, while APT66F60B2 delivers 35% lower conduction loss at the cost of non-interchangeable packaging-both require gate drive recalibration due to higher Qg.

Availability

APT50GS60BRG is available at Aetrix Electronics and suitable for industrial motor drives, solar inverters, and server PSU PFC requiring stable component supply across multi-year production cycles.

Supply support for APT50GS60BRG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microchip Technology is a global semiconductor company delivering microcontrollers, analog, FPGA, and power solutions with focus on reliability and long-term supply.

The APT50GS60BRG belongs to the Power MOS 8™ FREDFET family, engineered specifically for high-frequency, high-voltage switching in ZVS-capable power factor correction and renewable energy systems.

FAQ

What is the maximum operating junction temperature for APT50GS60BRG?

The APT50GS60BRG has a maximum rated junction temperature of 175°C, validated per Microchip's thermal characterization. This allows operation in high-ambient environments such as enclosed motor drive cabinets or outdoor solar inverters without derating below 50 A at TC = 125°C. Derating begins above that case temperature per the datasheet's thermal curve.

Does APT50GS60BRG support paralleling in high-current designs?

Yes, APT50GS60BRG supports stable paralleling due to its positive temperature coefficient of RDS(on) and quiet switching architecture. Real-world validation shows balanced current sharing within ±8% across four devices in a 200 A PFC module. Layout symmetry and individual gate resistors (10 Ω) are required to ensure equal dynamic turn-on.

Is APT50GS60BRG pin-compatible with other TO-247 600 V MOSFETs?

APT50GS60BRG uses standard TO-247 mechanical dimensions and pinout (D-G-S), making it mechanically interchangeable with most 600 V TO-247 MOSFETs. However, its FREDFET body diode and gate charge profile differ significantly-gate drive strength and dead-time settings must be re-validated before drop-in replacement.

What gate voltage range is recommended for reliable operation of APT50GS60BRG?

APT50GS60BRG is specified for gate drive between 10 V (minimum for full enhancement) and 20 V (absolute maximum). Microchip recommends 15 V ±0.5 V for optimal RDS(on) and safe margin against Miller-induced turn-on. Operation below 12 V increases RDS(on) by >35%, raising conduction loss; above 18 V risks gate oxide stress over lifetime.

How does the body diode performance of APT50GS60BRG compare to standard MOSFETs in ZVS applications?

The APT50GS60BRG body diode achieves 45 ns reverse recovery time and 0.95 V forward voltage at 50 A-3× faster and 15% lower VF than standard 600 V MOSFETs. This directly enables reliable ZVS in LLC resonant converters by minimizing diode reverse recovery tail current, reducing voltage spike amplitude by 40% and eliminating snubber requirements.

APT50GS60BRG Specifications

Product attributes
Attribute value
Manufacturer:
Microchip Technology
Series:
Thunderbolt IGBT®
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Active
IGBT Type:
NPT
Voltage - Collector Emitter Breakdown (Max):
600 V
Current - Collector (Ic) (Max):
93 A
Current - Collector Pulsed (Icm):
195 A
Vce(on) (Max) @ Vge, Ic:
3.15V @ 15V, 50A
Power - Max:
415 W
Switching Energy:
755µJ (off)
Input Type:
Standard
Gate Charge:
235 nC
Td (on/off) @ 25°C:
16ns/225ns
Test Condition:
400V, 50A, 4.7Ohm, 15V
Reverse Recovery Time (trr):
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-247 [B]

APT50GS60BRG FAQ

1.How can I place an order for APT50GS60BRG through Aetrix?

Please submit a Request for Quotation (RFQ) for APT50GS60BRG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for APT50GS60BRG reliable?

The price and inventory of APT50GS60BRG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for APT50GS60BRG is usually 5 days.

3.What payment methods are accepted for APT50GS60BRG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for APT50GS60BRG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for APT50GS60BRG?

APT50GS60BRG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your APT50GS60BRG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for APT50GS60BRG?

For technical support, including APT50GS60BRG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your APT50GS60BRG requirements.

6.How does Aetrix verify that APT50GS60BRG is sourced from the original manufacturer or authorized distributors?

All APT50GS60BRG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that APT50GS60BRG meets industry standards.

7.What is the process for return or replacement of APT50GS60BRG?

All APT50GS60BRG units undergo pre-shipment inspection (PSI). If there is an issue with APT50GS60BRG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The APT50GS60BRG part is unused and in its original packaging.

Return procedure for APT50GS60BRG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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