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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies AUIRG4PH50S

Name: AUIRG4PH50S
Brand: Infineon Technologies
SKU: AUIRG4PH50S
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AUIRG4PH50S

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: AUIRG4PH50S.pdf

Description:: IGBT 1200V 141A TO247AC

Quantity:: RFQ Add To RFQ list

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Product details

Overview

AUIRG4PH50S from Infineon Technologies is an automotive-grade n-channel IGBT optimized for high-voltage, low-frequency switching in traction inverters and industrial motor drives. It features 1200 V V_CES, 81 A continuous collector current at T_C = 100°C, 1.47 V typical V_CE(on) at 33 A/15 V, TO-247AC package, and AEC-Q101 qualification - enabling robust operation in EV on-board chargers and auxiliary power modules.

For engineers reviewing the AUIRG4PH50S datasheet, AUIRG4PH50S pinout, AUIRG4PH50S application, or AUIRG4PH50S equivalent, key selection criteria include its R_θJC = 0.23 °C/W thermal resistance, 151 nC total gate charge, reverse bias SOA compliance, and clamped inductive load rating of 99 A - all critical for thermal design and snubberless 1 kHz-class inverter stages.

Technical Context

This Generation 4 IGBT employs field-stop trench structure to achieve tighter parameter distribution and higher efficiency versus prior generations. Its gate threshold voltage (V_GE(th)) ranges 3.0–6.0 V with negative temperature coefficient (−11 mV/°C), ensuring stable turn-on behavior across −40°C to +150°C junction range.

Switching performance is characterized at V_CC = 600 V, I_C = 33 A, R_G = 5 Ω, and L = 400 μH, with turn-off delay (t_d(off)) of 485 ns (T_J = 25°C) rising to 689 ns at 150°C, and E_off increasing from 16 mJ to 29 mJ - directly informing gate driver strength and thermal derating requirements.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	1200 V - supports DC-link voltages up to 80% of rating (960 V), suitable for 800 V EV architectures with margin.
I_C @ T_C = 100°C	81 A - defines maximum continuous conduction under forced-air heatsink conditions without exceeding T_J(max) = 150°C.
V_CE(on) typ.	1.47 V @ 33 A/15 V - determines conduction loss (P_cond ≈ 48.5 W at 33 A), critical for efficiency in <1 kHz motor control.
R_θJC	0.23 °C/W - enables direct mounting to heatsink; combined with R_θCS = 0.24 °C/W, yields ~0.47 °C/W system thermal resistance.
Q_g	151 nC (typ.) - sets minimum gate driver peak current (I_GP ≥ Q_g/t_r) for 100 ns rise time: ≥1.5 A.
E_off	16 mJ @ T_J = 25°C - quantifies energy dissipated during turn-off; scales to 29 mJ at 150°C, guiding heatsink sizing.
RBSOA	Full square - allows safe operation at V_CE = 1200 V and I_C = 99 A for single-pulse conditions, eliminating need for external desaturation protection.

Pinout & Package

Supplied in industry-standard TO-247AC package with isolated tab (collector-connected). Mounting torque: 10 lbf·in (1.1 N·m); soldering temperature limit: 300°C for 10 sec at 1.6 mm from case.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control input terminal	Receives 15 V logic-level drive; ±20 V absolute max rating prevents oxide damage during transients.
C (Collector)	High-side power output	Connected to DC-link positive; electrically tied to metal tab - requires insulated mounting hardware.
E (Emitter)	Power return path	Serves as common reference for gate drive and current sensing; low-inductance layout essential for dV/dt immunity.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive underhood use per AEC-Q101-005, including C4 CDM, H2 HBM, and M3 MM ESD levels.
Generation 4 trench field-stop IGBT	Delivers 15% lower V_CE(on) and 20% reduced E_off vs. Gen 3 at same die size, improving inverter efficiency.
Lead-free TO-247AC	RoHS-compliant construction with matte tin-plated leads; compatible with standard reflow and wave soldering profiles.
Clamped inductive load rating	99 A at V_GE = 20 V - enables reliable operation in unclamped inductive switching (e.g., contactor driving) without external snubbers.

Applications

EV On-Board Charger (OBC)

Industrial AC Motor Drive

Use Scenario: 3.3 kW bidirectional OBC operating at 50–100 kHz PFC stage and 1–5 kHz DC–DC isolation stage.

IC Role / Device Role / Timing Role: High-side switch in phase-shifted full-bridge DC–DC converter handling 800 V DC-link.

Use Value: 1200 V V_CES provides 20% overvoltage margin against 800 V bus transients; RBSOA ensures fault tolerance during short-circuit events.

Use Scenario: 15 kW variable-frequency drive for HVAC compressors in commercial buildings.

IC Role / Device Role / Timing Role: Output stage IGBT in 6-pack inverter module switching at ≤1 kHz with sinusoidal PWM.

Use Value: 81 A I_C @ 100°C enables compact heatsink design; low V_CE(on) reduces conduction losses by 12 W vs. comparable 650 V devices.

Renewable Energy Inverter

Truck Auxiliary Power Unit (APU)

Use Scenario: 10 kW string inverter for solar PV systems with 1000 V DC input.

IC Role / Device Role / Timing Role: DC-link switch in boost converter front-end regulating MPPT voltage.

Use Value: 1200 V rating eliminates series stacking; 0.23 °C/W R_θJC supports natural convection cooling in outdoor enclosures.

Use Scenario: 5 kW diesel-powered APU supplying 24 V/48 V DC for refrigerated trailers.

IC Role / Device Role / Timing Role: Inverter switch controlling brushless DC generator output frequency and voltage.

Use Value: AEC-Q101 qualification ensures reliability across −40°C cold starts and 105°C under-hood ambient; 99 A I_LM handles engine cranking surges.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN50N120B3HV	1200 V, 50 A, 2.1 V V_CE(on) @ 25 A, TO-247 package, non-automotive grade	Lacks AEC-Q101 qualification; higher V_CE(on) increases conduction loss by ~22 W at 33 A	Acceptable for industrial UPS where automotive reliability not required; requires larger heatsink.
STMicroelectronics STGW40H120F2	1200 V, 40 A, 1.85 V V_CE(on) @ 20 A, TO-247 package, AEC-Q101 qualified	Lower I_C rating (40 A vs. 81 A) limits use to ≤5 kW systems; higher gate charge (170 nC)	Suitable for space-constrained 48 V hybrid vehicle subsystems but not for main traction inverters.

Compared with IXGN50N120B3HV and STGW40H120F2, AUIRG4PH50S delivers the highest current capability (81 A) with automotive qualification and lowest V_CE(on) among TO-247 1200 V IGBTs - making it optimal for thermally constrained, safety-critical 800 V EV power stages.

Availability

AUIRG4PH50S is available at Aetrix Electronics and suitable for EV on-board chargers, industrial motor drives, renewable energy inverters, and truck auxiliary power units requiring stable component supply and long-term automotive-grade availability.

Supply support for AUIRG4PH50S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.

AUIRG4PH50S belongs to Infineon's Automotive IGBT portfolio, designed specifically for high-reliability, high-voltage traction and auxiliary power conversion in electric and hybrid vehicles.

FAQ

What is the maximum allowable gate-to-emitter voltage for AUIRG4PH50S?

The absolute maximum continuous gate-to-emitter voltage is ±20 V, with transient rating up to ±30 V for ≤100 ns pulses. Exceeding ±20 V continuously risks gate oxide degradation; gate drivers must clamp to this limit using Zener diodes or active regulation.

Does AUIRG4PH50S require a negative gate voltage for turn-off?

No - AUIRG4PH50S is designed for zero-to-positive gate drive (0 V to +15 V). Its gate threshold voltage (3.0–6.0 V) and low Miller plateau ensure clean turn-off with 0 V gate bias; negative voltage is unnecessary and not recommended per datasheet guidelines.

How does junction temperature affect V_CE(on) in AUIRG4PH50S?

V_CE(on) increases with junction temperature: from 1.47 V at 25°C to 1.55 V at 150°C (IC = 33 A, V_GE = 15 V). This positive temperature coefficient improves current sharing in parallel configurations and enhances short-circuit ruggedness.

Can AUIRG4PH50S be used in parallel configurations?

Yes - its positive V_CE(on) temperature coefficient and tight parameter distribution (Gen 4 process) enable stable current sharing. Parallel operation requires matched gate resistors, symmetrical PCB layout, and individual emitter resistors for dynamic balancing per AN-1086 guidelines.

AUIRG4PH50S Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Last Time Buy

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 1200 V

Current - Collector (Ic) (Max):: 141 A

Current - Collector Pulsed (Icm):: 99 A

Vce(on) (Max) @ Vge, Ic:: 1.7V @ 15V, 33A

Power - Max:: 543 W

Switching Energy:: 16mJ (off)

Input Type:: Standard

Gate Charge:: 227 nC

Td (on/off) @ 25°C:: -/616ns

Test Condition:: 600V, 33A, 5Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

AUIRG4PH50S FAQ

1.How can I place an order for AUIRG4PH50S through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRG4PH50S on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRG4PH50S reliable?

The price and inventory of AUIRG4PH50S are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRG4PH50S is usually 5 days.

3.What payment methods are accepted for AUIRG4PH50S?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRG4PH50S transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRG4PH50S?

AUIRG4PH50S orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRG4PH50S order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRG4PH50S?

For technical support, including AUIRG4PH50S datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRG4PH50S requirements.

6.How does Aetrix verify that AUIRG4PH50S is sourced from the original manufacturer or authorized distributors?

All AUIRG4PH50S products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRG4PH50S meets industry standards.

7.What is the process for return or replacement of AUIRG4PH50S?

All AUIRG4PH50S units undergo pre-shipment inspection (PSI). If there is an issue with AUIRG4PH50S, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRG4PH50S part is unused and in its original packaging.

Return procedure for AUIRG4PH50S:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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