Infineon Technologies AUIRGP35B60PD

Overview

AUIRGP35B60PD from Infineon Technologies is a 600 V, 35 A NPT IGBT with co-packaged ultrafast soft-recovery HEXFRED diode in TO-247AC package, optimized for high-frequency (up to 150 kHz) switching in telecom/server SMPS and PFC circuits, featuring 1.85 V typical V_CE(on) at 22 A/15 V, minimal tail current, and R_θJC(IGBT) = 0.41 °C/W.

For engineers reviewing the AUIRGP35B60PD datasheet, AUIRGP35B60PD pinout, AUIRGP35B60PD application, or AUIRGP35B60PD equivalent, this page delivers verified electrical specs, thermal performance data, gate drive requirements, and real-world use cases in ZVS/PFC topologies - all validated against Infineon's official IRGP35B60PDPbF documentation.

Technical Context

This IGBT employs Non-Punch-Through (NPT) technology with positive temperature coefficient for stable parallel operation, enabling scalable power designs. Its integrated HEXFRED diode delivers 42–120 ns reverse recovery time (t_rr) and 80–600 nC Q_rr, minimizing voltage overshoot and EMI in hard-switched and resonant converters.

Switching behavior is characterized by low total gate charge (160–240 nC), tight parameter distribution, and robust RBSOA up to 600 V with full square-wave capability. Thermal design is supported by separate junction-to-case resistance values: 0.41 °C/W (IGBT) and 1.7 °C/W (diode).

Key Specifications

Pinout & Package

Supplied in TO-247AC package with isolated tab (collector-connected), standard three-terminal configuration for high-voltage IGBTs. Mounting torque: 10 lbf·in (1.1 N·m); soldering temperature: 300°C for 10 sec at 1.6 mm from case.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Compared with IXGN35N60B3 and STGW35HF60DL, AUIRGP35B60PD offers the lowest V_CE(on) and best thermal resistance among 600 V/35 A IGBTs, making it optimal for conduction-loss-sensitive PFC and high-power SMPS where junction temperature must stay below 125°C at full load.

Availability

AUIRGP35B60PD is available at Aetrix Electronics and suitable for telecom rectifiers, server PFC modules, and uninterruptible power supplies requiring stable component supply, long-term lifecycle support, and traceable RoHS-compliant sourcing.

Supply support for AUIRGP35B60PD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, automotive ICs, and security solutions, with global manufacturing and R&D centers.

AUIRGP35B60PD belongs to Infineon's WARP2 series of NPT IGBTs, engineered specifically for high-efficiency, high-frequency switching in industrial and telecom power conversion systems demanding low loss and robust ruggedness.

FAQ

What gate drive voltage is recommended for AUIRGP35B60PD?

Infineon specifies +15 V for reliable turn-on and -5 V to -10 V for robust turn-off. Operating at +15 V ensures full saturation (V_CE(on) ≤ 2.15 V at 22 A), while negative bias prevents spurious turn-on during high dv/dt transients. Gate resistor selection must limit peak current to ≤2 A based on Q_g = 240 nC max.

Can AUIRGP35B60PD be paralleled for higher current capacity?

Yes - its NPT structure provides a positive temperature coefficient for V_CE(on), enabling stable current sharing without external emitter resistors. Parallel operation requires matched gate drive paths, identical PCB layout symmetry, and shared heatsink mounting to maintain ΔT_J < 5°C between devices per Infineon Application Note AN-1001.

What is the maximum allowable case temperature for continuous operation?

The absolute maximum case temperature is 100°C per datasheet ratings. At T_C = 100°C, continuous collector current is derated to 34 A, and power dissipation drops to 123 W. For 60 A DC operation, case temperature must remain ≤25°C - achievable only with active cooling or very low duty-cycle intermittent use.

Does the co-packaged diode require separate gate control or snubbing?

No - the HEXFRED diode is uncontrolled and shares the IGBT's emitter terminal; it operates passively during freewheeling and reverse recovery. Snubbing is optional and only needed if measured V_CE overshoot exceeds 10% of V_CES; typical designs using 30ETH06 clamp diodes show <5% overshoot at 200 A/µs di/dt.