Infineon Technologies AUIRGP35B60PD-E

Overview

AUIRGP35B60PD-E from Infineon is an automotive-grade 600 V, 35 A NPT IGBT with co-packaged HEXFRED ultrafast soft-recovery diode in TO-247AD package, rated for 60 A continuous collector current at 25°C and optimized for PFC and ZVS SMPS circuits requiring low conduction loss (V_CE(on) = 1.85 V @ 15 V_GE, 22 A) and high switching efficiency up to 150 kHz.

For engineers reviewing the AUIRGP35B60PD-E datasheet, AUIRGP35B60PD-E pinout, AUIRGP35B60PD-E application, or AUIRGP35B60PD-E equivalent, key selection criteria include its 0.41 °C/W junction-to-case thermal resistance (IGBT), 1.7 °C/W (diode), 160–240 nC total gate charge, 42–60 ns reverse recovery time (T_J = 25°C), and automotive qualification per WARP2 series standards.

Technical Context

This IGBT employs Non-Punch-Through (NPT) technology with positive temperature coefficient for stable parallel operation, minimal tail current, and tight parameter distribution. Its integrated HEXFRED diode delivers soft recovery with Q_rr = 80–180 nC and t_rr = 42–60 ns at 25°C, enabling reduced EMI and snubber stress in high-frequency converters.

The device features 3715 pF input capacitance (C_ies), 265 pF output capacitance (C_oes) at 30 V, and 47 pF reverse transfer capacitance (C_res) at 1 MHz. Switching losses are characterized at 220–270 µJ E_on and 215–265 µJ E_off under 390 V, 22 A, 3.3 Ω gate drive conditions.

Key Specifications

Pinout & Package

Supplied in TO-247AD package with isolated tab, featuring three terminals: Gate (G), Collector (C), and Emitter (E). The flat, greased case-to-sink thermal resistance is 0.50 °C/W, supporting high-power density designs in space-constrained automotive modules.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT with co-packaged diode applications.

Compared with IRGP4062DPBF and IKW40N60H3, AUIRGP35B60PD-E uniquely combines automotive qualification, integrated soft-recovery diode, and lowest V_CE(on) among 600 V 35 A-class IGBTs-making it optimal for space- and reliability-critical on-board chargers and traction auxiliary converters.

Availability

AUIRGP35B60PD-E is available at Aetrix Electronics and suitable for on-board chargers, three-phase PFC rectifiers, ZVS resonant DC/DC converters, and 48 V mild-hybrid motor drives requiring stable component supply across automotive production lifecycles.

Supply support for AUIRGP35B60PD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.

AUIRGP35B60PD-E belongs to the WARP2 series of automotive-qualified IGBTs designed specifically for high-efficiency, high-reliability power conversion in electric vehicle subsystems including charging, DC/DC, and auxiliary inverters.

FAQ

What is the maximum gate-emitter voltage rating for AUIRGP35B60PD-E?

The absolute maximum gate-to-emitter voltage is ±20 V. Operation above +15 V or below −10 V risks permanent gate oxide damage. Recommended gate drive is +15 V for turn-on and −5 V to −10 V for turn-off to ensure fast, noise-immune switching and prevent spurious conduction during high dV/dt events in automotive environments.

Does AUIRGP35B60PD-E require an external freewheeling diode?

No. It integrates a HEXFRED ultrafast soft-recovery diode co-packaged in the same TO-247AD housing. This diode has t_rr = 42–60 ns and Q_rr = 80–180 nC at 25°C, eliminating the need for external diodes in standard half-bridge or boost configurations used in PFC and DC/DC applications.

How does the thermal resistance R_θJC differ between the IGBT and diode sections?

R_θJC is 0.41 °C/W for the IGBT die and 1.7 °C/W for the co-packaged diode die. This asymmetry reflects differing die sizes and thermal paths-designers must independently calculate junction temperatures using respective power dissipation (P_IGBT and P_diode) and apply derating curves from Figures 1 and 2 in the datasheet.

Can AUIRGP35B60PD-E be paralleled for higher current capacity?

Yes. Its NPT structure provides a positive temperature coefficient for V_CE(on), ensuring inherent current sharing. Parallel operation requires matched gate drive impedance (<±5% variation), symmetrical PCB layout, and individual gate resistors to suppress oscillation. Derate total current by 15% versus sum of individual ratings per AEC-Q101 parallel-use guidelines.