Infineon Technologies AUIRGP4063D

Overview

AUIRGP4063D from Infineon Technologies is an automotive-grade insulated gate bipolar transistor (IGBT) with integrated ultrafast soft-recovery co-pack diode, rated for 600 V V_CES, 60 A I_C at T_C = 100°C, and 5 μs short-circuit SOA at T_J(max) = 175°C; it delivers typ. V_CE(on) = 1.6 V at 48 A/15 V and supports high-efficiency motor control in electric power steering (EPS) and on-board chargers.

For engineers reviewing the AUIRGP4063D datasheet, AUIRGP4063D pinout, AUIRGP4063D application, or AUIRGP4063D equivalent, key selection criteria include its trench IGBT technology with positive V_CE(on) temperature coefficient, square RBSOA, 100% 4× I_LM surge testing, and tight parameter distribution for parallel operation in high-reliability traction inverters and DC-DC converters.

Technical Context

This IGBT employs trench-gate field-stop structure to achieve low conduction loss and controlled tail current, enabling efficient hard-switching up to 20 kHz in automotive traction stages. Its integrated diode features soft reverse recovery (t_rr = 115 ns, E_rec = 845 μJ at T_J = 175°C) and low Q_rr, minimizing voltage overshoot and EMI during commutation.

The device operates across –55°C to +175°C junction range with 0.45°C/W R_θJC(IGBT) and 0.92°C/W R_θJC(diode), supporting robust thermal management in sealed power modules. Its 5 μs short-circuit withstand time is validated under V_CC = 400 V, V_GE = +15 V → 0 V, R_g = 10 Ω conditions per CT-3 test circuit.

Key Specifications

Pinout & Package

Supplied in TO-247AC package (3-pin, straight lead, non-isolated case), with collector (C) tab electrically connected to the metal base for direct heatsink mounting and low-inductance power path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Compared with STGW40H60DLF and IXGN60N60A3, AUIRGP4063D offers superior integration (co-pack diode), lower conduction loss (1.6 V vs ≥1.85 V), and automotive qualification-making it optimal for space-, weight-, and reliability-critical EV subsystems where BOM simplification and AEC-Q101 compliance are mandatory.

Availability

AUIRGP4063D is available at Aetrix Electronics and suitable for electric power steering (EPS), on-board chargers (OBC), and traction inverter auxiliary stages requiring stable component supply, automotive-grade traceability, and long-term lifecycle support.

Supply support for AUIRGP4063D includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions for automotive, industrial, and renewable energy markets.

AUIRGP4063D belongs to Infineon's Automotive IGBT portfolio designed specifically for high-reliability, high-efficiency traction and auxiliary power conversion in electric vehicles, emphasizing ruggedness, thermal stability, and system-level functional safety.

FAQ

What is the maximum gate-emitter voltage rating for AUIRGP4063D?

The absolute maximum continuous gate-to-emitter voltage is ±20 V, with transient rating up to ±30 V for ≤100 ns pulses. Exceeding ±20 V continuously risks oxide degradation and threshold shift; gate drive circuits must include clamping (e.g., Zener diodes) and low-impedance paths to prevent ringing-induced overvoltage.

Does AUIRGP4063D require a negative gate voltage for turn-off?

No, AUIRGP4063D is fully compatible with 0 V / +15 V gate drive; negative voltage is not required. However, applying –5 V to –10 V during turn-off improves dV/dt immunity and reduces cross-conduction risk in half-bridge configurations, especially at high bus voltages (>300 V).

How is the co-pack diode electrically isolated from the IGBT die?

The diode shares the same TO-247AC package but is monolithically integrated on a separate silicon die within the same cavity, with independent metallization and bonding wires. It is not electrically isolated from the IGBT emitter-its cathode connects to the IGBT collector, and its anode connects to the shared emitter terminal, forming a standard anti-parallel configuration.

Can AUIRGP4063D be paralleled with identical units without external current-sharing components?

Yes-its positive V_CE(on) temperature coefficient ensures natural current balancing during thermal transients. Parallel operation requires matched gate drive impedance, symmetrical PCB layout, and shared heatsink mounting; no external emitter resistors are needed for static or dynamic current sharing up to four devices in automotive-grade designs.