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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies AUIRGP50B60PD1

Name: AUIRGP50B60PD1
Brand: Infineon Technologies
SKU: AUIRGP50B60PD1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AUIRGP50B60PD1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: AUIRGP50B60PD1.pdf

Description:: IGBT 600V 75A 390W TO247AC

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Product details

Overview

AUIRGP50B60PD1 from Infineon is an automotive-grade 600 V, 50 A NPT IGBT with co-packaged HEXFRED ultrafast soft-recovery diode in TO-247AC package, delivering 2.00 V typical V_CE(on) at 33 A/15 V and 390 W max power dissipation at T_C = 25°C, optimized for high-efficiency PFC and ZVS SMPS in HEV/EV traction inverters and on-board chargers.

For engineers reviewing the AUIRGP50B60PD1 datasheet, AUIRGP50B60PD1 pinout, AUIRGP50B60PD1 application, or AUIRGP50B60PD1 equivalent, key selection criteria include its 0.32 °C/W R_θJC(IGBT), 42–120 ns diode t_rr across temperature, 205–308 nC total gate charge, and automotive qualification per AEC-Q101 for mission-critical power conversion stages.

Technical Context

This IGBT employs non-punch-through (NPT) silicon technology with positive temperature coefficient for stable parallel operation, integrated with a monolithic HEXFRED diode exhibiting soft reverse recovery (Q_rr = 80–600 nC, t_rr = 42–120 ns) and low V_F (1.20–1.70 V). Its gate structure yields 1.7 Ω internal R_G and tight parameter distribution for predictable switching behavior.

Thermal design is enabled by low junction-to-case resistance (0.32 °C/W for IGBT, 1.7 °C/W for diode) and validated RBSOA up to 600 V with full square operation under clamped inductive loads. Switching losses are characterized at 390 V bus voltage with 3.3 Ω external gate resistor and 200 µH inductance.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - Withstands DC bus voltages up to 600 V without breakdown, suitable for 400 V nominal EV systems with margin.
V_CE(on) typ.	2.00 V @ 33 A/15 V - Enables <1.5 W conduction loss per device at rated current, reducing heatsink requirements.
E_off typ.	375 µJ @ 33 A/390 V - Low tail-current energy enables efficient 150 kHz switching in resonant topologies.
t_rr (diode)	42 ns @ 25°C - Ultrafast soft recovery minimizes voltage overshoot and EMI in hard-switched PFC stages.
R_θJC (IGBT)	0.32 °C/W - Allows direct mounting to heatsinks with minimal thermal interface resistance for high-power density designs.
Q_g	205–308 nC - Defines gate driver current demand (≥1.5 A peak) and influences turn-on timing control precision.
T_J range	−55 to +150 °C - Validated for under-hood automotive environments including battery thermal management zones.

Pinout & Package

Supplied in TO-247AC package with isolated metal tab (collector-connected), standard 3-pin layout for high-current power switching applications. Thermal path optimized via flat case surface (R_θCS = 0.24 °C/W with greased interface).

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Controls IGBT conduction; requires ±20 V absolute max rating and 1.7 Ω internal resistance affecting drive loop tuning.
C	Collector	Main high-side power terminal; electrically connected to metal tab for low-inductance heatsink coupling and thermal transfer.
E	Emitter	Power return path and gate reference; must be routed with low inductance to minimize V_GE noise during switching transitions.

Key Features

Feature	Design Value
NPT IGBT with positive V_CE(on) tempco	Enables stable current sharing in paralleled configurations without external current-balancing resistors.
Co-packaged HEXFRED diode	Eliminates discrete diode placement; provides soft recovery (I_rrm ≤ 10 A) and low Q_rr for reduced snubber stress.
Low parasitic capacitances	C_ies = 3648 pF, C_res = 56 pF - Reduces Miller-induced false turn-on risk and improves dv/dt immunity.
Automotive qualification	AEC-Q101 qualified with WARP2 series reliability testing - certified for safety-critical HEV/EV powertrain use.
Tight parameter distribution	±10% V_GE(th) and ±15% V_CE(on) spread - simplifies system-level derating and reduces worst-case thermal margining.

Applications

On-Board Charger (OBC) PFC Stage

Traction Inverter Auxiliary Power Supply

Use Scenario: Boost PFC converter operating at 65–150 kHz in 3.3 kW OBCs for Level 2 AC charging.

IC Role / Device Role / Timing Role: Main switching device in continuous conduction mode (CCM) boost stage, handling 50 A peak line current.

Use Value: Low V_CE(on) and soft diode recovery reduce conduction and switching losses, enabling >98% PFC efficiency at full load.

Use Scenario: High-voltage auxiliary supply powering gate drivers, MCU, and sensors in dual-motor EV inverters.

IC Role / Device Role / Timing Role: Primary switch in phase-shifted full-bridge topology converting 400 V battery to 12 V/24 V output.

Use Value: RBSOA compliance at 600 V and low E_off support ZVS operation up to 100 kHz, minimizing transformer size and EMI filtering.

HEV Battery Management System (BMS) Isolation DC-DC

EV Fast-Charging Front-End Rectifier

Use Scenario: Galvanically isolated 1 kW DC-DC converter linking 48 V mild-hybrid battery to 12 V network.

IC Role / Device Role / Timing Role: Synchronous rectifier replacement in active clamp forward topology, operating at 120 kHz.

Use Value: Integrated diode eliminates body-diode conduction loss; low Q_rr prevents cross-conduction in synchronous rectification.

Use Scenario: Active front-end rectifier in 250 kW depot chargers converting 400–800 V AC grid to stabilized DC bus.

IC Role / Device Role / Timing Role: Unidirectional switch in three-level NPC (neutral-point-clamped) configuration handling 75 A RMS current.

Use Value: 600 V V_CES rating supports 800 V DC bus with 25% margin; TO-247AC package ensures robust thermal cycling endurance over 10,000 cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT-based high-voltage power conversion applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRGP50B60PD1	Industrial-grade variant; identical electrical specs but lacks AEC-Q101 qualification and tighter parameter bins.	Approved for industrial SMPS only; not permitted in automotive safety-critical systems.	Select when cost sensitivity outweighs automotive compliance requirements and thermal cycling is less severe.
STGP50H60DLF	600 V/50 A trench-gate IGBT with faster t_f (10 ns vs. 11–20 ns) but higher V_CE(on) (2.2 V typ.) and no co-packaged diode.	Requires external ultrafast diode; better suited for hard-switched ZVS where lower fall time dominates loss budget.	Choose when optimizing for minimum turn-off time in fixed-frequency converters without soft-recovery constraints.

Compared with IRGP50B60PD1, AUIRGP50B60PD1 adds automotive qualification and tighter parameter spread at identical cost premium, while STGP50H60DLF trades integrated diode functionality for faster switching-making it viable only when external diode layout and thermal management are feasible.

Availability

AUIRGP50B60PD1 is available at Aetrix Electronics and suitable for automotive HEV/EV powertrain systems, industrial PFC modules, and high-reliability ZVS SMPS requiring stable component supply across extended production lifecycles.

Supply support for AUIRGP50B60PD1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.

The WARP2 series IGBTs are engineered for high-efficiency, high-reliability power conversion in electrified transportation, emphasizing low-loss switching, integrated diode performance, and AEC-Q101-compliant ruggedness.

FAQ

What is the maximum continuous collector current rating at 100°C case temperature?

The AUIRGP50B60PD1 supports 45 A continuous collector current at T_C = 100°C, derived from thermal limits and junction-to-case resistance of 0.32 °C/W. This rating assumes proper heatsinking and 15 V gate drive; exceeding it risks thermal runaway due to positive V_CE(on) temperature coefficient.

Does the integrated diode require separate gate control or biasing?

No-the co-packaged HEXFRED diode is a passive, monolithically integrated ultrafast soft-recovery device with no gate terminal. It operates solely under forward/reverse voltage bias across its anode (connected to emitter) and cathode (connected to collector), requiring no external control signals or bias networks.

Can AUIRGP50B60PD1 be paralleled with other units for higher current capacity?

Yes-its NPT structure and positive V_CE(on) temperature coefficient enable stable current sharing without external balancing components. Parallel operation requires matched gate drive impedance, symmetrical PCB layout, and shared heatsink mounting to maintain thermal uniformity across devices.

What is the recommended gate resistor value for 100 kHz ZVS operation?

A 3.3 Ω external gate resistor is validated in the datasheet for 390 V, 33 A switching at 125°C junction temperature, yielding 130–165 ns t_d(off) and 15–20 ns t_f. For ZVS at 100 kHz, this value balances switching loss reduction against gate drive strength and dv/dt control-lower values increase EMI risk, higher values raise E_on.

AUIRGP50B60PD1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: NPT

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 75 A

Current - Collector Pulsed (Icm):: 150 A

Vce(on) (Max) @ Vge, Ic:: 2.85V @ 15V, 50A

Power - Max:: 390 W

Switching Energy:: 255µJ (on), 375µJ (off)

Input Type:: Standard

Gate Charge:: 205 nC

Td (on/off) @ 25°C:: 30ns/130ns

Test Condition:: 390V, 33A, 3.3Ohm, 15V

Reverse Recovery Time (trr):: 42 ns

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

AUIRGP50B60PD1 FAQ

1.How can I place an order for AUIRGP50B60PD1 through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRGP50B60PD1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRGP50B60PD1 reliable?

The price and inventory of AUIRGP50B60PD1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRGP50B60PD1 is usually 5 days.

3.What payment methods are accepted for AUIRGP50B60PD1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRGP50B60PD1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRGP50B60PD1?

AUIRGP50B60PD1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRGP50B60PD1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRGP50B60PD1?

For technical support, including AUIRGP50B60PD1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRGP50B60PD1 requirements.

6.How does Aetrix verify that AUIRGP50B60PD1 is sourced from the original manufacturer or authorized distributors?

All AUIRGP50B60PD1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRGP50B60PD1 meets industry standards.

7.What is the process for return or replacement of AUIRGP50B60PD1?

All AUIRGP50B60PD1 units undergo pre-shipment inspection (PSI). If there is an issue with AUIRGP50B60PD1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRGP50B60PD1 part is unused and in its original packaging.

Return procedure for AUIRGP50B60PD1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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