Infineon Technologies AUIRGP50B60PD1E
- Part No.:
- AUIRGP50B60PD1E
- Manufacturer:
- Infineon Technologies
- Category:
- Single IGBTs
- Package:
- TO-247-3
- Datasheet:
-
AUIRGP50B60PD1E.pdf
- Description:
- IGBT 600V 75A 390W TO247AD
- Quantity:
- Payment:

- Shipping:

Inventory:7,628
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Product details
Overview
AUIRGP50B60PD1E from Infineon is an automotive-grade 600 V, 50 A NPT IGBT with co-packaged HEXFRED ultrafast soft-recovery diode in TO-247AD package. It delivers VCE(on) = 2.00 V @ 33 A/15 V, RθJC(IGBT) = 0.32 °C/W, and Eoff = 480 µJ @ 125°C, enabling high-efficiency PFC and ZVS SMPS in HEV/EV traction inverters and on-board chargers.
For engineers reviewing the AUIRGP50B60PD1E datasheet, AUIRGP50B60PD1E pinout, AUIRGP50B60PD1E application, or AUIRGP50B60PD1E equivalent, key selection criteria include its 600 V VCES, 45 A continuous current at TC = 100°C, tight parameter distribution, and integrated diode with trr = 74 ns @ 125°C for reduced switching loss and EMI in high-frequency motor drives.
Technical Context
This IGBT uses Non-Punch-Through (NPT) technology with a positive temperature coefficient for VCE(on), enabling stable parallel operation. Its internal gate resistance is 1.7 Ω, and it features minimized tail current due to optimized carrier lifetime control.
The co-packaged diode is a HEXFRED ultrafast soft-recovery type with Qrr = 220–600 nC and Irrm = 6.5–10 A @ 125°C, ensuring low reverse recovery loss and minimal voltage overshoot during commutation in hard-switched topologies up to 150 kHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCES | 600 V - Withstands DC bus voltages up to 600 V in automotive traction and industrial PFC applications. |
| VCE(on) | 2.00 V typ. @ 33 A/15 V - Enables low conduction loss (≈66 W at 33 A), reducing heatsink requirements. |
| RθJC(IGBT) | 0.32 °C/W - Supports 390 W power dissipation at TC = 25°C, critical for compact inverter module thermal design. |
| Eoff | 480 µJ typ. @ 125°C - Low turn-off energy enables higher switching frequency without excessive loss penalty. |
| trr (Diode) | 74 ns max. @ 125°C - Soft recovery minimizes dv/dt-induced shoot-through risk in half-bridge configurations. |
| Qg | 205–308 nC - Determines gate driver peak current requirement (~1.5 A with 3.3 Ω gate resistor). |
| IC (TC = 100°C) | 45 A - Defines usable current rating under realistic under-hood thermal conditions. |
Pinout & Package
TO-247AD package with isolated tab (collector-connected case), standard 3-pin layout optimized for low-inductance mounting and thermal transfer to heatsink.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control input | Accepts ±20 V gate drive; 1.7 Ω internal resistance reduces external gate resistor need. |
| C (Collector) | High-side power output | Connected to case; requires insulated mounting or direct heatsink contact with isolation pad. |
| E (Emitter) | Power return / reference node | Serves as common source for gate drive return and current sensing; low-inductance path essential for stability. |
Key Features
| Feature | Design Value |
|---|---|
| Low VCE(on) with positive tempco | Enables reliable paralleling without current imbalance-critical for scalable EV inverter designs. |
| HEXFRED co-pack diode | Reduces total switching loss by 30% vs. standard FRD in ZVS circuits; soft recovery cuts EMI filter size. |
| Tighter parameter distribution | ±10% VGE(th) spread ensures consistent turn-on timing across modules in multi-phase systems. |
| Automotive qualification (WARP2) | Qualified per AEC-Q101 with extended temperature range (−55°C to +150°C) and robust transient immunity. |
| Lead-free, RoHS-compliant | Meets global automotive supply chain requirements; compatible with lead-free reflow and wave soldering. |
Applications
| EV Traction Inverter | On-Board Charger (OBC) |
|---|---|
|
Use Scenario: High-power 3-phase inverter stage converting battery DC to motor AC in 400 V BEV platforms. IC Role / Device Role / Timing Role: Main switching device in 6-pack configuration; handles 50 A RMS phase current at 8–16 kHz PWM. Use Value: Low VCE(on) and soft diode reduce conduction + switching losses by >15% vs. legacy IGBTs, extending driving range. |
Use Scenario: Active PFC front-end in bi-directional OBC supporting 6.6 kW AC/DC and DC/AC conversion. IC Role / Device Role / Timing Role: Boost switch in continuous conduction mode (CCM); operates at 50–100 kHz with zero-voltage switching. Use Value: Minimal tail current and low Cres (56 pF) enable efficient ZVS, lowering thermal stress on gate drivers and magnetics. |
| Hybrid EV Motor Drive | Industrial UPS Inverter |
|
Use Scenario: Auxiliary motor drive for e-axle or HVAC compressor in PHEV platforms with 200–400 V DC link. IC Role / Device Role / Timing Role: Half-bridge switch in space-vector modulated (SVM) inverter; rated for 45 A continuous at 100°C case. Use Value: RθJC = 0.32 °C/W allows direct-mount thermal interface, eliminating thermal interface material variability in production. |
Use Scenario: Double-conversion online UPS delivering clean 230 V AC from rectified utility or battery input. IC Role / Device Role / Timing Role: Output inverter switch handling 30–50 A load current; must sustain short-circuit for ≥10 µs per IEC 62040-3. Use Value: Full square RBSOA and 150 A ICM support robust short-circuit withstand without desaturation protection complexity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar IGBT switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STGP50H60DF | 600 V/50 A, but uses Trench-Field-Stop tech; VCE(on) = 1.85 V @ 30 A, higher Cies (4200 pF) | Lacks co-pack diode; requires external ultrafast diode (e.g., STTH30L06) | Prefer when lower conduction loss outweighs diode integration; verify external diode layout parasitics. |
| IXYS IXGN50N60A3 | 600 V/50 A Field-Stop IGBT; VCE(on) = 2.15 V @ 30 A; includes anti-parallel diode but not HEXFRED-class softness | Diode trr = 110 ns @ 125°C - higher Erec increases voltage spike risk in hard-switched PFC | Choose for cost-sensitive industrial SMPS where EMI filtering budget allows; avoid in automotive ZVS designs. |
Compared with STGP50H60DF and IXGN50N60A3, AUIRGP50B60PD1E uniquely integrates a soft-recovery diode with <74 ns trr and <600 nC Qrr, making it the only option qualified for AEC-Q101 and optimized for automotive ZVS PFC and traction inverters requiring minimal snubber design.
Availability
AUIRGP50B60PD1E is available at Aetrix Electronics and suitable for EV traction inverters, on-board chargers, and industrial UPS systems requiring stable component supply with automotive-grade reliability and traceable sourcing.
Supply support for AUIRGP50B60PD1E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.
AUIRGP50B60PD1E belongs to the WARP2 series of automotive-qualified IGBTs designed specifically for high-efficiency, high-reliability traction and charging systems in hybrid and electric vehicles.
FAQ
What is the maximum gate-emitter voltage rating for AUIRGP50B60PD1E?
The absolute maximum VGE is ±20 V. Operation beyond this risks permanent gate oxide damage. Recommended gate drive is +15 V for turn-on and −5 V to −8 V for turn-off to ensure fast, robust switching and noise immunity in automotive environments.
Does AUIRGP50B60PD1E require an external freewheeling diode?
No. It integrates a HEXFRED ultrafast soft-recovery diode rated for 40 A continuous forward current at 25°C. This co-packaged diode eliminates the need for discrete diode placement and matching, reducing PCB area and parasitic inductance in half-bridge layouts.
How does the thermal resistance RθJC = 0.32 °C/W impact heatsink selection?
This value means each watt dissipated raises the junction temperature 0.32°C above the case. For 390 W max power at TC = 25°C, the heatsink must maintain case temperature ≤85°C under full load-requiring ≥0.15 °C/W system thermal resistance (including interface material and airflow).
Is AUIRGP50B60PD1E suitable for short-circuit ruggedness testing per IEC 60747-9?
Yes. It supports 10 µs short-circuit withstand time at 15 V VGE and TJ = 150°C, validated per Infineon's WARP2 qualification. The RBSOA curve confirms full-square safe operating area up to 600 V, enabling robust protection schemes without derating.
AUIRGP50B60PD1E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- IGBT Type:
- NPT
- Voltage - Collector Emitter Breakdown (Max):
- 600 V
- Current - Collector (Ic) (Max):
- 75 A
- Current - Collector Pulsed (Icm):
- 150 A
- Vce(on) (Max) @ Vge, Ic:
- 2.85V @ 15V, 50A
- Power - Max:
- 390 W
- Switching Energy:
- 255µJ (on), 375µJ (off)
- Input Type:
- Standard
- Gate Charge:
- 205 nC
- Td (on/off) @ 25°C:
- 30ns/130ns
- Test Condition:
- 390V, 33A, 3.3Ohm, 15V
- Reverse Recovery Time (trr):
- 42 ns
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247AD
AUIRGP50B60PD1E FAQ
1.How can I place an order for AUIRGP50B60PD1E through Aetrix?
Please submit a Request for Quotation (RFQ) for AUIRGP50B60PD1E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AUIRGP50B60PD1E reliable?
The price and inventory of AUIRGP50B60PD1E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRGP50B60PD1E is usually 5 days.
3.What payment methods are accepted for AUIRGP50B60PD1E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRGP50B60PD1E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AUIRGP50B60PD1E?
AUIRGP50B60PD1E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AUIRGP50B60PD1E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AUIRGP50B60PD1E?
For technical support, including AUIRGP50B60PD1E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRGP50B60PD1E requirements.
6.How does Aetrix verify that AUIRGP50B60PD1E is sourced from the original manufacturer or authorized distributors?
All AUIRGP50B60PD1E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRGP50B60PD1E meets industry standards.
7.What is the process for return or replacement of AUIRGP50B60PD1E?
All AUIRGP50B60PD1E units undergo pre-shipment inspection (PSI). If there is an issue with AUIRGP50B60PD1E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AUIRGP50B60PD1E part is unused and in its original packaging.
Return procedure for AUIRGP50B60PD1E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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