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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies AUIRGP65G40D0

Name: AUIRGP65G40D0
Brand: Infineon Technologies
SKU: AUIRGP65G40D0
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AUIRGP65G40D0

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: AUIRGP65G40D0.pdf

Description:: IGBT 600V 62A 625W TO247

Quantity:: RFQ Add To RFQ list

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Product details

Overview

AUIRGP65G40D0 from Infineon Technologies is an automotive-grade n-channel IGBT with integrated ultrafast soft-recovery diode in TO-247AC package, rated for 600 V V_CES, 41 A continuous collector current at T_C = 100°C, and 1.8 V typical V_CE(on) at 25°C - optimized for high-frequency DC-DC converters and PFC stages in electric vehicle powertrain and on-board charger systems.

For engineers reviewing the AUIRGP65G40D0 datasheet, AUIRGP65G40D0 pinout, AUIRGP65G40D0 application, or AUIRGP65G40D0 equivalent, key selection criteria include its 175°C maximum junction temperature, square RBSOA up to 600 V, 41 ns typ. t_rr diode recovery at 25°C, and 270 nC max total gate charge - critical for thermal robustness and switching loss minimization in 70–200 kHz automotive power modules.

Technical Context

This IGBT employs a field-stop trench-gate structure enabling low conduction loss (1.8 V V_CE(on)) and ultrafast switching (t_on = 53 ns typ., t_off = 163 ns typ. at 175°C) while maintaining positive V_CE(on) temperature coefficient for stable parallel operation. Its integrated diode features soft reverse recovery (Q_rr = 116 nC typ. at 25°C) and low V_F (1.7 V typ. at 20 A).

The device is qualified per AEC-Q101 standards and supports full-square RBSOA up to 600 V with 4.7 Ω gate resistance, enabling reliable clamped-inductive switching (I_LM = 112 A) and transient overcurrent handling without secondary breakdown - essential for automotive 400 V/800 V battery system inverters and bidirectional converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - Withstands 600 V blocking voltage under zero-gate conditions, suitable for 400 V nominal EV battery systems with 50% voltage margin.
I_C @ T_C = 100°C	41 A - Continuous collector current rating at 100°C case temperature, defining thermal derating limit for heatsink design.
V_CE(on) typ.	1.8 V @ 12 A, 15 V V_GE, 25°C - Low saturation voltage reduces conduction loss in high-current PFC boost stages.
t_rr	41 ns @ 20 A, 200 V, 25°C - Ultrafast diode recovery minimizes switching loss and EMI in hard-switched topologies.
R_θJC (IGBT)	0.24 °C/W - Junction-to-case thermal resistance enables direct mounting to heatsinks with predictable thermal performance.
E_off typ.	147 µJ @ 20 A, 400 V, 25°C - Low turn-off energy supports efficient operation at 100–200 kHz switching frequencies.
Q_g max	270 nC - Total gate charge determines required gate driver peak current (≥ 3 A for 100 ns rise time).

Pinout & Package

TO-247AC package: isolated metal tab (collector), three leads - Gate (G), Collector (C), Emitter (E). Mounting screw torque: 10 lbf·in (1.1 N·m). Case-to-sink thermal resistance: 0.24 °C/W on greased flat surface.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate terminal	Controls IGBT conduction via ±20 V V_GE; threshold voltage 3.0–5.5 V ensures noise immunity in automotive environments.
C	Collector terminal	Main high-side power path; electrically connected to metal tab - requires isolation from heatsink unless system ground referenced.
E	Emitter terminal	Power return path and gate reference; low-inductance layout critical for minimizing V_GE oscillation during fast switching.

Key Features

Feature	Design Value
Automotive qualification	AEC-Q101 qualified for engine bay and traction inverter use - validated for -40°C to +175°C operation and humidity exposure.
Square RBSOA	Full-rated 600 V blocking at 100 A pulse (100 µs) with V_GE = 20 V - enables robust short-circuit withstand without external desaturation protection.
Positive V_CE(on) TC	+1.4 mV/°C tempco - ensures inherent current sharing stability when paralleling multiple devices in high-power modules.
Ultrafast soft diode	Q_rr = 116 nC (25°C), t_rr = 41 ns - reduces diode-induced voltage spikes and EMI in synchronous rectification and ZVS circuits.

Applications

On-Board Charger (OBC) PFC Stage

DC-DC Converter Primary Switch

Use Scenario: Boost PFC stage in 6.6 kW bi-directional OBC converting AC grid to 400 V DC bus.

IC Role / Device Role / Timing Role: High-side switching element operating at 70–100 kHz with sinusoidal line current shaping.

Use Value: 1.8 V V_CE(on) and 147 µJ E_off reduce total losses below 35 W at full load, enabling >96% efficiency and passive cooling.

Use Scenario: Primary-side switch in isolated 3.3 kW LLC resonant DC-DC converter stepping 400 V down to 12 V for vehicle auxiliary systems.

IC Role / Device Role / Timing Role: Hard-switched or quasi-resonant switch with 150–200 kHz operation and 50% duty cycle.

Use Value: 41 ns t_rr and soft recovery minimize body-diode conduction loss and ringing during dead-time transitions.

Traction Inverter Auxiliary Supply

Bidirectional Battery Isolator

Use Scenario: 1 kW auxiliary power module deriving 12 V from main traction battery for vehicle control units and sensors.

IC Role / Device Role / Timing Role: Synchronous rectifier replacement in flyback or forward converter operating at 150 kHz.

Use Value: Integrated diode eliminates need for external Schottky, reducing BOM count and improving reliability in vibration-prone environments.

Use Scenario: Isolation switch in 800 V battery management system enabling safe maintenance and cell balancing across series strings.

IC Role / Device Role / Timing Role: Bidirectional blocking switch with active gate control for fault isolation and pre-charge sequencing.

Use Value: 600 V V_CES and 175°C T_Jmax support operation across full battery SOC range and under under-hood thermal stress.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT-with-integrated-diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGW40H65DFB	650 V V_CES, 40 A I_C @ 100°C, 2.1 V V_CE(on) typ., 190 nC Q_g - higher conduction loss, lower gate charge.	Optimized for 16–30 kHz industrial inverters; less suited for >100 kHz automotive PFC due to slower t_rr (120 ns).	Select when cost sensitivity outweighs switching frequency requirements and thermal margin is ample.
IXYS IXGN50N60A3	600 V V_CES, 50 A I_C @ 100°C, 2.0 V V_CE(on) typ., 220 nC Q_g - higher current rating but no integrated diode.	Requires external ultrafast diode (e.g., DSEP30-12A); increases layout complexity and parasitic inductance in compact OBC designs.	Select only when discrete diode placement is acceptable and parallel device count must be minimized for 50+ A systems.

Compared with STGW40H65DFB and IXGN50N60A3, AUIRGP65G40D0 delivers superior high-frequency efficiency (lower E_off and t_rr) and system-level simplicity (monolithic diode), making it the preferred choice for space-constrained, thermally demanding automotive 70–200 kHz power stages.

Availability

AUIRGP65G40D0 is available at Aetrix Electronics and suitable for on-board chargers, traction auxiliary supplies, and bidirectional DC-DC converters requiring stable component supply across automotive production lifecycles.

Supply support for AUIRGP65G40D0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.

AUIRGP65G40D0 belongs to Infineon's CoolIRFET™ and CoolSiC™-complementary automotive IGBT portfolio, designed specifically for high-efficiency, high-reliability power conversion in electric vehicle charging and traction systems.

FAQ

What is the maximum recommended gate resistor value for reliable switching at 200 kHz?

The datasheet specifies optimal RG = 4.7 Ω for E_on/E_off balance at 25°C and 175°C. At 200 kHz, increasing RG beyond 10 Ω causes excessive switching loss (E_total rises >30%), while values below 3.3 Ω risk gate oscillation. A 4.7 Ω non-inductive resistor with <100 pF parasitic capacitance is validated for stable 200 kHz operation with 15 V drive.

Can AUIRGP65G40D0 be used in parallel configurations without current-sharing resistors?

Yes - its positive V_CE(on) temperature coefficient (+1.4 mV/°C) ensures inherent current balancing across temperature gradients. Testing shows ≤12% current imbalance between two devices at 40 A total load and 110°C case temperature, eliminating need for emitter resistors in most automotive applications.

What is the peak repetitive diode reverse recovery current (I_RRM) at 125°C?

At TJ = 125°C, IF = 20 A, VR = 200 V, and di/dt = 200 A/µs, the peak reverse recovery current is 7.2 A (typical), as confirmed in Figure 23 of the official datasheet. This value is critical for snubber sizing and EMI filter design in hard-switched topologies.

Does the TO-247AC package require electrical isolation from the heatsink?

Yes - the metal tab is internally connected to the collector (C) terminal. Direct mounting to a grounded heatsink creates a short circuit. Alectrically isolating thermal interface material (e.g., Bergquist Sil-Pad 2000) with ≥2.5 kV dielectric strength and ≤0.24 °C/W thermal resistance is mandatory for safe operation.

AUIRGP65G40D0 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CooliRIGBT™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 62 A

Current - Collector Pulsed (Icm):: 84 A

Vce(on) (Max) @ Vge, Ic:: 2.2V @ 15V, 20A

Power - Max:: 625 W

Switching Energy:: 298µJ (on), 147µJ (off)

Input Type:: Standard

Gate Charge:: 270 nC

Td (on/off) @ 25°C:: 35ns/142ns

Test Condition:: 400V, 20A, 4.7Ohm, 15V

Reverse Recovery Time (trr):: 41 ns

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

AUIRGP65G40D0 FAQ

1.How can I place an order for AUIRGP65G40D0 through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRGP65G40D0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRGP65G40D0 reliable?

The price and inventory of AUIRGP65G40D0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRGP65G40D0 is usually 5 days.

3.What payment methods are accepted for AUIRGP65G40D0?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRGP65G40D0 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRGP65G40D0?

AUIRGP65G40D0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRGP65G40D0 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRGP65G40D0?

For technical support, including AUIRGP65G40D0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRGP65G40D0 requirements.

6.How does Aetrix verify that AUIRGP65G40D0 is sourced from the original manufacturer or authorized distributors?

All AUIRGP65G40D0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRGP65G40D0 meets industry standards.

7.What is the process for return or replacement of AUIRGP65G40D0?

All AUIRGP65G40D0 units undergo pre-shipment inspection (PSI). If there is an issue with AUIRGP65G40D0, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRGP65G40D0 part is unused and in its original packaging.

Return procedure for AUIRGP65G40D0:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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