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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies BUP213

Name: BUP213
Brand: Infineon Technologies
SKU: BUP213
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BUP213

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-220-3

Datasheet:: BUP213.pdf

Description:: IGBT 1200V 32A 200W TO220

Quantity:: RFQ Add To RFQ list

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Inventory:4,779

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Product details

Overview

BUP213 from Infineon Technologies is a 1200 V, 32 A trench-gate field-stop IGBT in TO-220 AB package, designed for high-voltage switching in industrial motor drives and UPS systems. It features low V_CE(sat) (2.7 V at 30 A/125 °C), fast turn-off delay (400–530 ns), and avalanche-rated ruggedness (22 mJ single-pulse).

For engineers reviewing the BUP213 datasheet, BUP213 pinout, BUP213 application, or BUP213 equivalent, key selection criteria include its 1200 V blocking capability, thermal resistance (≤0.63 K/W), gate threshold voltage (4.5–6.5 V), and short-circuit withstand time (≤10 µs at 150 °C).

Technical Context

The BUP213 employs a field-stop IGBT structure with trench-gate technology to achieve low conduction loss and controlled tail current decay. Its gate threshold voltage (4.5–6.5 V) ensures robust noise immunity, while the 1200 V V_CE rating supports operation in 600–800 V DC bus systems.

Switching performance is optimized for inductive loads: typical turn-on delay is 70 ns, rise time 45 ns, and turn-off delay 400 ns under standard test conditions (V_CC = 600 V, I_C = 15 A, R_G = 82 Ω). The device is latch-up free and rated for single-pulse avalanche energy of 22 mJ.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE Rating	1200 V - supports 600–800 V DC link applications with margin for voltage transients
I_C Continuous	32 A at T_C = 90 °C - enables compact heatsink design in forced-air-cooled inverters
V_CE(sat)	2.7 V at I_C = 30 A, T_j = 125 °C - reduces conduction loss and thermal stress in high-duty-cycle operation
R_thJC	≤0.63 K/W - allows direct mounting to heatsink with predictable junction-to-case thermal path
t_sc Rating	≤10 µs at V_GE = ±15 V, T_j = 150 °C - enables reliable short-circuit protection without external desat detection
E_AS	22 mJ (single pulse, 50 V, 15 A) - provides intrinsic ruggedness against inductive switching faults
C_iss	1000–1350 pF at V_CE = 25 V - determines gate drive power requirement and switching speed sensitivity to R_G

Pinout & Package

Package: TO-220 AB (3-pin, isolated tab, vertical mounting). Pin 1 = Gate (G), Pin 2 = Collector (C), Pin 3 = Emitter (E). Tab is electrically connected to Collector.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate terminal	Controls IGBT conduction via voltage-driven MOS channel; requires ±20 V max gate-emitter voltage
Pin 2 (C)	Collector terminal	High-side power input node; electrically tied to metal tab for thermal and electrical connection to heatsink
Pin 3 (E)	Emitter terminal	Low-side return path; referenced to gate driver ground; carries full load current and switching transients

Key Features

Feature	Design Value
Field-stop trench-gate structure	Enables simultaneous optimization of V_CE(sat), switching speed, and tail current - critical for efficiency vs. EMI trade-offs
Avalanche energy rating	22 mJ single-pulse - eliminates need for external snubbers in moderate-energy inductive turn-off events
Latch-up free operation	Guarantees safe linear-mode operation during overloads or soft-start without parasitic thyristor activation
Short-circuit withstand time	≤10 µs at 150 °C - simplifies protection circuitry by enabling fixed-time desaturation response

Applications

Industrial Motor Drives

Uninterruptible Power Supplies (UPS)

Use Scenario: Three-phase inverter stage in 5–15 kW variable-frequency drives for pumps and compressors.

IC Role / Device Role / Timing Role: Main switching device in bridge-leg configuration; handles 600 V DC bus, 32 A peak phase current, and 16 kHz PWM.

Use Value: Low V_CE(sat) and fast switching reduce total losses by ~12% vs. comparable 1200 V IGBTs, improving thermal margin at full load.

Use Scenario: Inverter output stage in online double-conversion UPS systems delivering clean 230 V AC backup power.

IC Role / Device Role / Timing Role: High-side switch in half-bridge topology; operates with 800 V DC link and 10–20 kHz switching frequency.

Use Value: Avalanche rating and short-circuit robustness ensure reliable fault handling during grid transients or battery surge events.

Solar String Inverters

Induction Heating Systems

Use Scenario: DC–AC conversion stage in 3–8 kW photovoltaic string inverters with transformerless topologies.

IC Role / Device Role / Timing Role: Switching element in H-bridge; blocks 1200 V reverse voltage during anti-parallel diode commutation.

Use Value: 1200 V rating accommodates PV open-circuit voltages up to 1000 V with safety margin, eliminating need for series stacking.

Use Scenario: Resonant inverter stage in medium-frequency (20–50 kHz) induction heating generators for metal hardening.

IC Role / Device Role / Timing Role: High-current switching device driving LC tank; conducts 32 A RMS with high di/dt demands.

Use Value: Low tail current minimizes switching loss during zero-voltage switching transitions, improving system efficiency above 94%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGW30H120DF2	1200 V/30 A, lower C_iss (750 pF), higher V_CE(sat) (3.2 V @ 30 A/125 °C)	Optimized for higher switching frequency (>30 kHz); less suitable for high-current continuous conduction	Prefer when reducing gate drive loss is prioritized over conduction loss at >25 kHz.
IXYS IXGN32N120B3	1200 V/32 A, higher R_thJC (0.85 K/W), no specified avalanche rating	Requires larger heatsink; lacks built-in fault ruggedness for unclamped inductive switching	Choose only if gate charge (Q_G = 110 nC) compatibility with existing drivers is critical.

Compared with STGW30H120DF2 and IXGN32N120B3, the BUP213 delivers superior thermal performance (0.63 K/W), verified avalanche ruggedness (22 mJ), and lower conduction loss - making it optimal for 10–20 kHz industrial inverters where reliability and efficiency at high current dominate.

Availability

BUP213 is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, solar string inverters, and induction heating systems requiring stable component supply and long-term production continuity.

Supply support for BUP213 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

The BUP213 belongs to Infineon's early-generation high-voltage IGBT portfolio, engineered specifically for cost-sensitive, high-reliability industrial inverters operating at 10–20 kHz with 600–800 V DC links.

FAQ

What is the maximum gate-emitter voltage rating for BUP213?

The absolute maximum DC gate-emitter voltage is ±20 V. Exceeding this risks permanent gate oxide damage. Gate drive circuits must limit transient overshoot using clamping diodes or Zener networks, especially during fast switching with high dV/dt across the collector-emitter terminals.

Is BUP213 suitable for use without a freewheeling diode?

No - the BUP213 does not integrate an anti-parallel diode. External ultrafast recovery diodes (e.g., IDP30E120) must be used in inductive switching applications to provide current recirculation paths and prevent destructive voltage spikes during turn-off.

Does BUP213 require negative gate voltage for reliable turn-off?

While not strictly required, applying –15 V gate-emitter voltage during turn-off (as tested in datasheet switching characterization) improves noise immunity and ensures complete channel depletion under high dV/dt conditions. A minimum of –5 V is recommended for robust operation in noisy industrial environments.

What is the meaning of "Latch-up free" in BUP213's preliminary data?

"Latch-up free" confirms that the IGBT's internal parasitic NPN-PNP structure cannot self-sustain conduction under normal operating conditions - eliminating risk of destructive secondary breakdown during linear-mode operation, overload, or short-circuit events without external current limiting.

BUP213 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 1200 V

Current - Collector (Ic) (Max):: 32 A

Current - Collector Pulsed (Icm):: 64 A

Vce(on) (Max) @ Vge, Ic:: 3.2V @ 15V, 15A

Power - Max:: 200 W

Switching Energy:: -

Input Type:: Standard

Gate Charge:: -

Td (on/off) @ 25°C:: 70ns/400ns

Test Condition:: 600V, 15A, 82Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

BUP213 FAQ

1.How can I place an order for BUP213 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUP213 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUP213 reliable?

The price and inventory of BUP213 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUP213 is usually 5 days.

3.What payment methods are accepted for BUP213?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUP213 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BUP213?

BUP213 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUP213 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUP213?

For technical support, including BUP213 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUP213 requirements.

6.How does Aetrix verify that BUP213 is sourced from the original manufacturer or authorized distributors?

All BUP213 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUP213 meets industry standards.

7.What is the process for return or replacement of BUP213?

All BUP213 units undergo pre-shipment inspection (PSI). If there is an issue with BUP213, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUP213 part is unused and in its original packaging.

Return procedure for BUP213:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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