Texas Instruments CSD95379Q3MT
- Part No.:
- CSD95379Q3MT
- Manufacturer:
- Texas Instruments
- Category:
- Full Half-Bridge (H Bridge) Drivers
- Package:
- 10-PowerVFDFN
- Datasheet:
-
CSD95379Q3MT.pdf
- Description:
- IC HALF BRIDGE DRIVER 20A 10VSON
- Quantity:
- Payment:

- Shipping:

Inventory:500
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Product details
Overview
CSD95379Q3MT from Texas Instruments is a synchronous buck NexFET™ power stage integrating driver IC and dual MOSFETs in a single 3.3-mm × 3.3-mm SON package. It delivers up to 20 A continuous output current at 1.8 V with 92.5% system efficiency, supports 500 kHz–2 MHz switching, and features tri-state PWM input, diode emulation mode, and integrated bootstrap diode for high-density point-of-load regulation in ultrabooks and networking systems.
For engineers reviewing the CSD95379Q3MT datasheet, CSD95379Q3MT pinout, CSD95379Q3MT application, or CSD95379Q3MT equivalent, key selection criteria include its 20 A continuous rating, 1.8 W power loss at 12 A/1.8 V, ULQ/DCM/FCCM operating modes, 3.3-V/5-V PWM compatibility, and thermal performance validated up to 125°C junction temperature.
Technical Context
The CSD95379Q3MT implements a high-frequency synchronous buck topology with integrated gate driver, control FET, and sync FET. Its driver supports selectable conduction modes-FCCM (SKIP# high), DCM (SKIP# low), and ultra-low quiescent states (SKIP# or PWM tri-stated)-enabling Connected Standby compliance. The device uses adaptive zero-crossing detection and shoot-through protection to ensure safe switching transitions.
Thermal management relies on low-thermal-resistance paths: RθJB = 2.5°C/W and RθJC(top) = 22.8°C/W. System-level power loss is characterized across ambient temperature, airflow, input voltage, output inductance, and switching frequency-enabling accurate SOA prediction without discrete RDS(ON) or Qg extraction.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Continuous Output Current | 20 A at VIN = 12 V, VOUT = 1.8 V, fSW = 500 kHz, LOUT = 0.29 µH - defines maximum sustained load capability under standard thermal conditions |
| Peak Output Current | 45 A for tp ≤ 10 ms, duty cycle ≤ 1% - supports transient load demands without thermal shutdown |
| System Efficiency | 92.5% at 12 A, VIN = 12 V, VOUT = 1.8 V - measured total power conversion efficiency including gate drive losses |
| Power Loss | 1.8 W at 12 A, TJ = 25°C - total device dissipation enabling compact thermal design with minimal heatsinking |
| Switching Frequency Range | 25–2000 kHz - supports high-frequency operation to reduce passive component size while maintaining stability |
| Quiescent Current Modes | 130 µA (PWM tri-state), 8 µA (SKIP# tri-state) - enables Windows® 8 Connected Standby and ultra-low-power sleep states |
| Input Voltage Range | VIN = 16 V max, VDD = 4.5–5.5 V - compatible with 12-V input rails and standard 5-V logic supplies |
Pinout & Package
Package: SON (Small Outline No-lead), 3.3 mm × 3.3 mm, 10-pin, plastic, exposed thermal pad. Optimized for low-inductance PCB layout and high-density placement.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| SKIP# | Diode emulation mode control | Low = DCM enabled; High = FCCM; Tri-state = ULQ mode (8 µA IQ) |
| PWM | Tri-state pulse-width modulation input | Logic high/low controls FET switching; tri-state reduces IQ to 130 µA with zero-latency wake-up |
| VDD | Driver supply rail | 4.5–5.5 V gate drive and logic supply; includes UVLO (4.15 V rise / 3.7 V fall) |
| PGND (pins 4 & 11) | Power ground reference | Dual PGND pins require low-impedance PCB connection to minimize ground bounce and EMI |
| VSW | Switching node | Connects directly to output inductor; must be minimized in trace length to reduce ringing and losses |
| VIN | Main input voltage supply | 16 V max; requires local ceramic decoupling capacitors placed adjacent to pin |
| BOOT / BOOT_R | Bootstrap circuit terminals | Integrated bootstrap diode; 0.1 µF ceramic capacitor between BOOT and BOOT_R generates high-side gate drive |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low power loss | 1.8 W at 12 A enables thermally constrained designs without forced airflow or heatsinks |
| Tri-state PWM input | Reduces quiescent current to 130 µA while preserving immediate response-critical for dynamic power states |
| Diode emulation with FCCM | Automatically switches between DCM (light load) and FCCM (heavy load) to maximize efficiency across full load range |
| Integrated bootstrap diode | Eliminates external bootstrap diode, reducing BOM count and layout complexity while improving reliability |
| Shoot-through protection | Hardware-enforced dead-time prevents simultaneous FET conduction and catastrophic short-circuit failure |
| System-optimized footprint | SON 3.3 × 3.3 mm outline with thermal pad and symmetric pin layout simplifies PCB routing and thermal vias |
Applications
| Ultrabook Point-of-Load Regulation | Networking ASIC Core Supply |
|---|---|
Use Scenario: Regulating 1.8 V core voltage for Intel Core i-series CPUs in thin-and-light notebooks with strict thermal and space constraints. IC Role / Device Role / Timing Role: Synchronous buck power stage delivering up to 20 A with dynamic load step response and Connected Standby support. Use Value: 92.5% efficiency at 12 A reduces heat generation by >30% vs legacy solutions, extending battery life and enabling fanless operation. |
Use Scenario: Providing stable 1.2 V/15 A supply to high-performance network processors in 1U rack-mounted switches. IC Role / Device Role / Timing Role: High-frequency (1.5 MHz) power stage minimizing output capacitance while maintaining <1% output ripple. Use Value: 2 MHz capability allows use of sub-300 nH inductors, shrinking solution size by 40% versus 500 kHz alternatives. |
| Telecom Baseband Processor Supply | Industrial FPGA Core Rail |
Use Scenario: Powering multi-core baseband SoCs in LTE small cells requiring rapid load transients and low-noise operation. IC Role / Device Role / Timing Role: Buck power stage with diode emulation mode enabling seamless transition between active and idle states. Use Value: 8 µA ULQ current during SKIP# tri-state meets 3GPP-defined deep-sleep requirements for energy-efficient radio operation. |
Use Scenario: Delivering 1.0 V/18 A to Xilinx Kintex-7 FPGA cores in industrial PLC controllers operating at –40°C to +85°C ambient. IC Role / Device Role / Timing Role: Robust power stage rated for 125°C junction temperature with validated SOA up to 18 A at 400 LFM airflow. Use Value: RθJB = 2.5°C/W enables direct mounting to internal copper planes-eliminating thermal interface materials and assembly steps. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous buck power stage applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CSD95372Q5M | Higher 30 A continuous rating, larger 5 mm × 6 mm SON package, 2.5 mΩ/1.2 mΩ RDS(ON) | Better suited for 24–48 V input telecom systems requiring >25 A peak current | Select when higher current headroom and input voltage margin are required; board redesign needed due to footprint change |
| MP87653GQ | Monolithic 30 V buck converter (not power stage); integrates controller, drivers, and MOSFETs; 16 A continuous | Requires no external controller; simpler BOM but less flexible loop compensation and phase control | Choose for cost-sensitive, space-constrained applications where controller integration outweighs need for multiphase scalability |
Compared with CSD95379Q3MT, CSD95372Q5M offers greater current capacity in a larger package, while MP87653GQ trades external controller flexibility for monolithic simplicity and lower component count-making CSD95379Q3MT optimal for high-density, controller-based multiphase designs.
Availability
CSD95379Q3MT is available at Aetrix Electronics and suitable for ultrabook CPU core regulation, networking ASIC power delivery, and industrial FPGA supply applications requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.
Supply support for CSD95379Q3MT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor company specializing in analog, embedded processing, and power management technologies, with over 90 years of innovation in high-reliability power solutions.
The CSD95379Q3MT belongs to TI's NexFET™ power stage product line, engineered specifically for high-efficiency, high-current point-of-load conversion in space-constrained computing and communications equipment.
FAQ
What is the maximum recommended junction temperature for continuous operation of the CSD95379Q3MT?
The CSD95379Q3MT is rated for continuous operation up to 125°C junction temperature, as validated by thermal testing per JEDEC JESD51 standards. Its RθJB of 2.5°C/W and SOA curves are specified at this limit, and derating is required above this temperature to maintain reliability and avoid thermal shutdown.
Does the CSD95379Q3MT require an external bootstrap diode?
No, the CSD95379Q3MT integrates a bootstrap diode internally between VDD and BOOT pins. Only a 0.1 µF ceramic capacitor between BOOT and BOOT_R is required-eliminating the need for an external diode and reducing layout complexity and BOM count.
How does the CSD95379Q3MT support Windows® 8 Connected Standby?
The CSD95379Q3MT supports Connected Standby via its ultra-low quiescent current mode: when SKIP# is tri-stated, supply current drops to 8 µA (typical), enabling microsecond-scale wake-up while meeting platform-level power budget targets for modern OS sleep states.
Can the CSD95379Q3MT operate with a 3.3-V PWM input signal?
Yes, the CSD95379Q3MT PWM input is compatible with both 3.3-V and 5-V logic levels. Its VIH threshold is 2.65 V and VIL is 0.6 V, with 0.2 V hysteresis-ensuring robust recognition of standard LVCMOS signals without level-shifting circuitry.
What is the purpose of the dual PGND pins (pins 4 and 11) on the CSD95379Q3MT?
The dual PGND pins provide separate low-impedance return paths for high-frequency switching currents (pin 4) and driver bias currents (pin 11), minimizing ground bounce and improving EMI performance. They must be connected together on the PCB using a wide, low-inductance copper pour beneath the package.
CSD95379Q3MT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- NexFET™
- Package/Case:
- 10-PowerVFDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Output Configuration:
- Half Bridge
- Applications:
- Synchronous Buck Converters
- Interface:
- PWM
- Load Type:
- Inductive
- Technology:
- Power MOSFET
- Rds On (Typ):
- -
- Current - Output / Channel:
- 20A
- Current - Peak Output:
- 45A
- Voltage - Supply:
- 4.5V ~ 5.5V
- Voltage - Load:
- 4.5V ~ 16V
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Features:
- Bootstrap Circuit, Diode Emulation
- Fault Protection:
- Shoot-Through, UVLO
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 10-VSON (3.3x3.3)
CSD95379Q3MT FAQ
1.How can I place an order for CSD95379Q3MT through Aetrix?
Please submit a Request for Quotation (RFQ) for CSD95379Q3MT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CSD95379Q3MT reliable?
The price and inventory of CSD95379Q3MT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CSD95379Q3MT is usually 5 days.
3.What payment methods are accepted for CSD95379Q3MT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CSD95379Q3MT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CSD95379Q3MT?
CSD95379Q3MT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CSD95379Q3MT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CSD95379Q3MT?
For technical support, including CSD95379Q3MT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CSD95379Q3MT requirements.
6.How does Aetrix verify that CSD95379Q3MT is sourced from the original manufacturer or authorized distributors?
All CSD95379Q3MT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CSD95379Q3MT meets industry standards.
7.What is the process for return or replacement of CSD95379Q3MT?
All CSD95379Q3MT units undergo pre-shipment inspection (PSI). If there is an issue with CSD95379Q3MT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CSD95379Q3MT part is unused and in its original packaging.
Return procedure for CSD95379Q3MT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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