Texas Instruments CSD97395Q4MT

Overview

CSD97395Q4MT from Texas Instruments is a synchronous buck NexFET™ power stage integrating driver IC and dual MOSFETs in a single 3.5 mm × 4.5 mm SON package. It delivers up to 25 A continuous output current, achieves >92% system efficiency at 15 A (VIN = 12 V, VOUT = 1.8 V, fSW = 500 kHz), supports input voltages up to 24 V, and operates at switching frequencies up to 2 MHz - optimized for high-density point-of-load DC/DC conversion in notebook and server VRMs.

For engineers reviewing the CSD97395Q4MT datasheet, CSD97395Q4MT pinout, CSD97395Q4MT application, or CSD97395Q4MT equivalent, key selection criteria include its tri-state PWM/ SKIP# control for ultra-low quiescent current (8 µA ULQ mode), integrated bootstrap diode, shoot-through protection, and system-optimized PCB footprint enabling compact multi-phase designs with minimal layout effort.

Technical Context

The CSD97395Q4MT implements a current-mode synchronous buck power stage with an integrated gate driver IC that directly controls high-side and low-side NexFET™ MOSFETs. Its functional modes - Forced Continuous Conduction Mode (FCCM), Diode Emulation Mode (DCM), Low Quiescent (LQ), and Ultra-Low Quiescent (ULQ) - are selected via PWM and SKIP# logic states, enabling dynamic efficiency optimization across load ranges.

It features adaptive zero-crossing detection for seamless DCM transition, integrated bootstrap FET (replacing discrete diode), UVLO with 4.15 V turn-on / 3.7 V turn-off thresholds, and robust ESD protection (±2000 V HBM). The device requires external VDD (4.5–5.5 V) and bootstrap capacitor (0.1 µF min), with all critical signals referenced to PGND.

Key Specifications

Pinout & Package

Package: SON 3.5 mm × 4.5 mm, plastic, RoHS-compliant, halogen-free, with exposed thermal pad (PGND-connected).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous buck power stage applications.

Compared with CSD97395Q4MT, CSD97374Q4M offers cost savings at lower current tiers but sacrifices 5 A headroom, while ISL99227BIRZ extends voltage and current capability at the expense of board area and component count - making CSD97395Q4MT optimal for space-constrained, high-efficiency 12 V-input notebook/server VRMs.

Availability

CSD97395Q4MT is available at Aetrix Electronics and suitable for ultrabook VRMs, multiphase server Vcore designs, and high-frequency networking PoL converters requiring stable component supply, long-term lifecycle assurance, and consistent parametric performance across production batches.

Supply support for CSD97395Q4MT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor company specializing in analog, embedded processing, and power management technologies, with leadership in high-efficiency power conversion solutions for computing and communications markets.

The CSD97395Q4MT belongs to TI's NexFET™ Power Stage product line, engineered specifically for high-current, high-frequency synchronous buck applications in space-constrained computing platforms where thermal density, efficiency, and layout simplicity are critical design constraints.

FAQ

What is the maximum recommended input voltage for reliable operation of the CSD97395Q4MT?

The CSD97395Q4MT has an absolute maximum VIN-to-PGND rating of 30 V, but TI specifies 24 V as the maximum recommended operating input voltage. Exceeding 19 V increases risk of VSW node voltage overshoot beyond safe margins during switching transients; system-level validation is required above 19 V, including careful snubber design and layout optimization to maintain reliability. The CSD97395Q4MT datasheet defines 24 V as the upper limit for guaranteed parametric performance under recommended conditions.

Does the CSD97395Q4MT support both 3.3 V and 5 V PWM input logic levels?

Yes, the CSD97395Q4MT PWM input is explicitly designed for compatibility with both 3.3 V and 5 V logic families. Its VIH threshold is 2.65 V (min), VIL is 0.6 V (max), and tri-state window spans 1.3 V to 2.0 V - ensuring robust recognition of valid high/low states and seamless transition into low-power tri-state mode regardless of controller voltage. This dual-voltage support is confirmed in Section 6.5 of the CSD97395Q4MT datasheet under PWM I/O specifications.

How does the ULQ (Ultra-Low Quiescent) mode function in the CSD97395Q4MT, and what is its wake-up latency?

ULQ mode in the CSD97395Q4MT is activated when the SKIP# pin is left floating (tri-stated), reducing total supply current to 8 µA (typical). In this state, the UVLO comparator is disabled to minimize leakage, and the driver outputs remain low. Wake-up occurs within 50 µs of SKIP# being driven high or low, restoring full PWM responsiveness. This behavior is documented in Sections 7.3.4 and 7.4 of the CSD97395Q4MT datasheet and enables Windows® 8 connected standby compliance.

Is the CSD97395Q4MT pin-compatible with other devices in the CSD973xx family?

No, the CSD97395Q4MT is not fully pin-compatible with earlier CSD973xx variants such as CSD97374Q4M. While both share the same 3.5 mm × 4.5 mm SON package and identical pin count, the internal driver logic and thermal pad configuration differ - notably, CSD97374Q4M lacks ULQ mode support and uses a different SKIP# functional mapping. Pin-for-pin replacement requires verification of electrical behavior, thermal performance, and control signal timing per each device's respective datasheet.

What thermal management practices are recommended for the CSD97395Q4MT in high-current applications?

TI recommends using ≥12 thermal vias (10 mil drill, 16 mil pad) under the exposed PGND pad, connected to inner-layer GND planes, with tented opposite-side vias to prevent solder wicking. The PCB should employ ≥2 oz copper on at least two layers, and airflow ≥400 LFM is advised for 25 A continuous operation. Thermal resistance data shows RθJB = 2.5°C/W; maintaining board temperature ≤85°C ensures junction stays below 125°C under full load - validated in Figure 6 (SOA curve) of the CSD97395Q4MT datasheet.