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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Diodes Incorporated DGTD120T25S1PT

Name: DGTD120T25S1PT
Brand: Diodes Incorporated
SKU: DGTD120T25S1PT
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DGTD120T25S1PT

Manufacturer:: Diodes Incorporated

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: DGTD120T25S1PT.pdf

Description:: IGBT 1200V-X TO247 TUBE 0.45K

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Product details

Overview

DGTD120T25S1PT from Diodes Incorporated is a 1200V field-stop trench IGBT with integrated ultra-soft fast-recovery anti-parallel diode in TO-247 (Type MC) package. It delivers V_CE(sat) = 2.0 V @ I_C = 25 A, t_rr = 100 ns (typ), and 175°C max junction temperature-optimized for high-efficiency motor drives and solar inverters.

For engineers reviewing the DGTD120T25S1PT datasheet, DGTD120T25S1PT pinout, DGTD120T25S1PT application, or DGTD120T25S1PT equivalent, key selection criteria include switching energy (E_on = 1.44 mJ, E_off = 0.55 mJ @ T_vj = 25°C), gate charge (Q_g = 204 nC), and diode softness for low EMI in hard-switching topologies.

Technical Context

This IGBT employs field-stop trench structure to simultaneously reduce conduction loss and improve switching speed. Its positive V_CE(sat) temperature coefficient enables stable parallel operation, while the monolithically integrated diode features ultra-narrowed V_F distribution and soft reverse recovery (dirr/dt = −376 A/µs).

The device supports 10 µs short-circuit withstand time at 600 V bus voltage and 175°C junction temperature, with R_θJC = 0.43 °C/W (IGBT) and 1.55 °C/W (diode), enabling thermal design for high-power industrial converters operating up to 25 A continuous collector current at T_C = 100°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	1200 V - Withstands DC bus voltages up to 1200 V in solar inverters and UPS systems.
V_CE(sat)	2.0 V @ I_C = 25 A, T_vj = 25°C - Enables low conduction loss and reduced heatsink requirements.
t_rr	100 ns @ I_F = 25 A, di_F/dt = 500 A/µs - Minimizes diode reverse recovery stress and EMI in bridge-leg commutation.
Q_g	204 nC - Determines gate driver power and layout sensitivity; requires ≥2 A peak drive capability.
E_ts	1.99 mJ @ T_vj = 25°C - Total switching energy defines thermal load during PWM operation at typical 10–20 kHz frequencies.
R_θJC (IGBT)	0.43 °C/W - Enables direct mounting to heatsinks for high-power density designs without thermal interface material degradation.
T_vj(max)	175°C - Supports operation in harsh environments (e.g., industrial motor drives) with derated current at elevated case temperatures.

Pinout & Package

Package: TO-247 (Type MC), molded plastic case with matte tin-plated leads, UL 94V-0 rated, 5.6 g weight.

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main power output terminal	Connected to high-side DC bus or motor phase; carries full load current and withstands 1200 V blocking.
Gate (G)	Control input	High-impedance MOS-controlled terminal requiring ±20 V absolute max; driven via isolated gate driver with 23 Ω external resistor per datasheet test condition.
Emitter (E)	Power return and reference node	Serves as common emitter for IGBT and cathode for integrated diode; critical for low-inductance PCB layout to minimize switching oscillation.

Key Features

Feature	Design Value
Field Stop Trench IGBT Structure	Reduces tail current and improves trade-off between V_CE(sat) and switching speed versus planar devices.
Ultra-Soft Fast Recovery Diode	Reverse recovery dI_rr/dt = −376 A/µs ensures minimal voltage overshoot and snubber stress during freewheeling.
Positive V_CE(sat) Tempco	Enables natural current sharing in paralleled configurations without external current-sensing or active balancing.
175°C Maximum Junction Temperature	Extends usable lifetime in thermally constrained enclosures and allows higher overload capability during transient conditions.
Lead-Free & Halogen-Free Construction	Meets RoHS 3 (2015/863/EU) and JEDEC J-STD-020 reflow standards; compatible with standard Pb-free assembly processes.

Applications

Motor Drive

Uninterruptible Power Supply (UPS)

Use Scenario: Three-phase inverter stage for HVAC compressors and industrial servo drives operating at 10–16 kHz PWM frequency.

IC Role / Device Role / Timing Role: High-side/low-side switching element in 6-pack IGBT module replacement configuration; handles 25 A RMS motor current with 100 µs short-circuit tolerance.

Use Value: Low V_CE(sat) reduces conduction loss by ~15% vs. comparable 1200 V IGBTs, improving system efficiency at partial load.

Use Scenario: Online double-conversion UPS output inverter delivering clean 50/60 Hz sine wave under battery backup mode.

IC Role / Device Role / Timing Role: Bridge-leg switch managing bidirectional power flow between DC link and AC output; operates with sinusoidal PWM and zero-voltage switching assist.

Use Value: Ultra-soft diode recovery minimizes EMI filter size and eliminates need for external snubbers in compact 10 kVA designs.

Solar Inverter

Induction Heating Cooker

Use Scenario: Two-level string inverter DC–AC stage converting 600–1000 V PV input to grid-synchronized 230 V AC.

IC Role / Device Role / Timing Role: Main switching device in H-bridge topology; subjected to repetitive 10–20 kHz switching with 1200 V blocking duty cycle.

Use Value: 175°C T_vj(max) allows derated operation at ambient >70°C without forced air cooling, reducing system BOM cost.

Use Scenario: Resonant half-bridge inverter driving 20–50 kHz tank circuit in domestic induction cooktops.

IC Role / Device Role / Timing Role: Hard-switched power switch handling 25 A peak resonant current with rapid polarity reversal and high di/dt.

Use Value: Tight V_F distribution (±0.25 V) ensures consistent diode conduction across production lots, stabilizing resonant frequency and cooking power control.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN120N120A3	1200 V, 120 A rated; higher current capacity but larger Q_g (320 nC) and slower t_rr (250 ns)	Better suited for high-current, lower-frequency (<5 kHz) welder inverters where conduction loss dominates	Select when system requires >50 A continuous current and can accommodate larger gate drive power and slower switching.
Infineon IKW40N120H3	1200 V, 40 A; lower V_CE(sat) (1.85 V) but no integrated diode-requires discrete ultra-fast diode pairing	Preferred in space-constrained solar microinverters where discrete diode optimization is feasible	Choose when board layout allows separate diode placement and thermal management permits tighter V_F matching.

Compared with IXGN120N120A3 and IKW40N120H3, DGTD120T25S1PT offers balanced performance for mid-power (25 A) applications needing integrated diode softness, moderate gate charge, and proven 175°C reliability-ideal for cost-sensitive industrial inverters where BOM count and layout simplicity matter.

Availability

DGTD120T25S1PT is available at Aetrix Electronics and suitable for motor drives, uninterruptible power supplies, and solar inverters requiring stable component supply and long-term industrial lifecycle support.

Supply support for DGTD120T25S1PT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management and signal integrity solutions for industrial, computing, and consumer markets.

DGTD120T25S1PT belongs to Diodes' high-voltage IGBT product line, engineered specifically for energy-efficient power conversion in motor control, renewable energy, and induction heating applications demanding ruggedness and thermal robustness.

FAQ

What is the maximum allowable gate-emitter voltage for DGTD120T25S1PT?

The absolute maximum gate-emitter voltage is ±20 V DC. Exceeding this rating risks permanent gate oxide damage. Recommended operating range is −10 V to +15 V, with −5 V to −8 V recommended for turn-off bias to ensure robust noise immunity in noisy industrial environments.

Does DGTD120T25S1PT require an external freewheeling diode?

No. The device integrates an ultra-soft fast-recovery anti-parallel diode with t_rr = 100 ns (typ) and tight V_F distribution. This eliminates the need for an external diode in standard inverter bridge configurations, reducing component count and layout complexity.

How does the positive temperature coefficient of V_CE(sat) benefit parallel operation?

The positive V_CE(sat) temperature coefficient causes hotter devices to exhibit higher saturation voltage, naturally limiting current imbalance. This enables stable parallel connection of multiple DGTD120T25S1PT units without active current-sharing circuits or precision-matched gate resistors.

What is the short-circuit withstand capability of DGTD120T25S1PT?

It supports 10 µs short-circuit duration at V_CC ≤ 600 V, V_GE = 15 V, and T_vj = 175°C, with up to 1000 cumulative events and ≥1.0 s interval between events. This enables implementation of simple overcurrent protection without complex desaturation detection circuitry.

DGTD120T25S1PT Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Field Stop

Voltage - Collector Emitter Breakdown (Max):: 1200 V

Current - Collector (Ic) (Max):: 50 A

Current - Collector Pulsed (Icm):: 100 A

Vce(on) (Max) @ Vge, Ic:: 2.4V @ 15V, 25A

Power - Max:: 348 W

Switching Energy:: 1.44mJ (on), 550µJ (off)

Input Type:: Standard

Gate Charge:: 204 nC

Td (on/off) @ 25°C:: 73ns/269ns

Test Condition:: 600V, 25A, 23Ohm, 15V

Reverse Recovery Time (trr):: 100 ns

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247

DGTD120T25S1PT FAQ

1.How can I place an order for DGTD120T25S1PT through Aetrix?

Please submit a Request for Quotation (RFQ) for DGTD120T25S1PT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DGTD120T25S1PT reliable?

The price and inventory of DGTD120T25S1PT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DGTD120T25S1PT is usually 5 days.

3.What payment methods are accepted for DGTD120T25S1PT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DGTD120T25S1PT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DGTD120T25S1PT?

DGTD120T25S1PT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DGTD120T25S1PT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DGTD120T25S1PT?

For technical support, including DGTD120T25S1PT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DGTD120T25S1PT requirements.

6.How does Aetrix verify that DGTD120T25S1PT is sourced from the original manufacturer or authorized distributors?

All DGTD120T25S1PT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DGTD120T25S1PT meets industry standards.

7.What is the process for return or replacement of DGTD120T25S1PT?

All DGTD120T25S1PT units undergo pre-shipment inspection (PSI). If there is an issue with DGTD120T25S1PT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DGTD120T25S1PT part is unused and in its original packaging.

Return procedure for DGTD120T25S1PT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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