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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Diodes Incorporated DGTD65T40S1PT

Name: DGTD65T40S1PT
Brand: Diodes Incorporated
SKU: DGTD65T40S1PT
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DGTD65T40S1PT

Manufacturer:: Diodes Incorporated

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: DGTD65T40S1PT.pdf

Description:: IGBT 600V-X TO247 TUBE 0.45K

Quantity:: RFQ Add To RFQ list

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Product details

Overview

DGTD65T40S1PT from Diodes Incorporated is a 650V field-stop trench IGBT in TO-247 package, designed for high-efficiency power conversion in hard-switched and resonant topologies. It delivers V_CE(sat) = 1.95 V @ I_C = 40 A, E_off = 0.35 mJ @ T_C = 25°C, t_rr = 80 ns (typ), and operates up to 175°C junction temperature-enabling compact UPS inverters and solar string inverters.

For engineers reviewing the DGTD65T40S1PT datasheet, DGTD65T40S1PT pinout, DGTD65T40S1PT application, or DGTD65T40S1PT equivalent, key selection criteria include switching energy balance (E_on/E_off), short-circuit ruggedness (5 µs @ 150°C), thermal resistance (R_θJC = 0.44°C/W), and gate charge (Q_g = 219 nC) for gate driver sizing.

Technical Context

This IGBT employs field-stop trench structure with integrated fast-recovery anti-parallel diode, enabling simultaneous optimization of conduction loss and switching speed. Its transconductance (g_FS = 17.0 S) and gate threshold voltage (V_GE(th) = 4.0–6.0 V) support stable turn-on under varying gate drive conditions and temperature drift.

The device features low reverse recovery charge (Q_rr = 1.0 µC @ T_vj = 25°C) and controlled di/dt sensitivity (dirr/dt = −950 A/µs), reducing voltage overshoot in inductive switching. Short-circuit withstand time (t_sc = 5 µs) is validated at V_CC ≤ 400 V, V_GE = 15 V, and T_vj = 150°C-critical for welder primary-side protection.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	650 V - Maximum blocking voltage for 400–600 V DC bus applications like solar inverters and IH cookers
V_CE(sat)	1.95 V @ I_C = 40 A, T_vj = 25°C - Low conduction loss enabling <1.2 W static dissipation at rated current
E_off	0.35 mJ @ T_C = 25°C - Enables high-frequency operation (>20 kHz) with manageable thermal load in UPS systems
t_rr	80 ns @ I_F = 20 A, di_F/dt = 1000 A/µs - Fast diode recovery reduces snubber losses and EMI in bridge-leg commutation
R_θJC (IGBT)	0.44 °C/W - Supports 341 W continuous power dissipation with minimal heatsink requirement at T_C = 25°C
Q_g	219 nC - Determines gate driver peak current (≥2.8 A for 7.9 Ω RG) and layout parasitic sensitivity
T_vj(max)	+175°C - Allows operation in thermally constrained environments such as enclosed welder power stages

Pinout & Package

Package: TO-247 (Type MC), molded plastic case with matte tin-plated leads, UL 94V-0 rated, weight ≈5.6 g.

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main high-side current path	Connected to DC bus positive; must maintain ≥4 mm creepage/clearance per IEC 62368-1 for 650 V operation
Gate (G)	Control input terminal	High-impedance MOS-controlled interface requiring low-inductance gate loop (<10 nH) to suppress oscillation
Emitter (E)	Reference node for gate drive and current sensing	Shared emitter node for IGBT and anti-parallel diode; critical for Kelvin sensing in precision current feedback

Key Features

Feature	Design Value
Field-stop trench IGBT structure	Enables 650 V blocking with <2.0 V V_CE(sat), balancing efficiency and ruggedness for industrial motor drives
Integrated fast-recovery diode	Q_rr = 1.0 µC and t_rr = 80 ns reduce turn-on losses in half-bridge freewheeling paths
Short-circuit ruggedness	5 µs withstand time at 150°C junction enables robust overcurrent protection without desaturation circuit complexity
Lead-free & halogen-free "Green" construction	RoHS 3 compliant with Br+Cl <1500 ppm and Sb <1000 ppm-meets IPC-1752A material declaration requirements
Low R_θJC (0.44°C/W)	Reduces thermal interface dependency, allowing direct-mount heatsinking without thermal pads in space-constrained welder modules

Applications

UPS Inverter Stage

Solar String Inverter

Use Scenario: Three-phase IGBT bridge converting 400 V DC battery bank to 230 V AC output with 98% peak efficiency.

IC Role / Device Role / Timing Role: Main switching device in active-clamp forward or three-level NPC topology, operating at 16–20 kHz.

Use Value: Low E_off (0.35 mJ) and fast t_rr minimize dead-time losses and improve THD performance below 0.8%.

Use Scenario: Dual-string MPPT inverter handling 3–5 kW DC input, requiring high-voltage isolation and grid-synchronization compliance.

IC Role / Device Role / Timing Role: High-side switch in interleaved boost stage, switching at 25 kHz with soft-commutation assistance.

Use Value: 650 V V_CE rating supports 1000 V PV open-circuit voltage derating; 175°C T_vj extends lifetime in rooftop ambient up to 70°C.

Induction Heating Cooker

Industrial Welder Primary Switch

Use Scenario: Resonant half-bridge driving 20–50 kHz LC tank for pan detection and power regulation.

IC Role / Device Role / Timing Role: High-frequency switching element with zero-voltage switching (ZVS) assist; gate driven by transformer-isolated driver.

Use Value: Low Q_gc (115 nC) and C_res (131 pF) enable precise ZVS timing control and reduce driver power consumption by >30% vs. planar IGBTs.

Use Scenario: Primary-side inverter in 3-phase rectifier-fed arc welder delivering 200–400 A output with rapid current ramp-up.

IC Role / Device Role / Timing Role: Hard-switched IGBT in asymmetric half-bridge, subject to repetitive short-circuit events during arc initiation.

Use Value: Validated 5 µs short-circuit withstand at 150°C allows elimination of fast desaturation detection circuitry, simplifying PCB layout and BOM.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN60N60C3	600 V rating, higher V_CE(sat) (2.2 V), lower Q_g (150 nC), no integrated diode	Requires external ultrafast diode; better suited for lower bus voltage (≤450 V) and higher frequency (>30 kHz)	Select when gate drive power budget is tight and external diode layout is acceptable
Infineon IKW40N65ES5	650 V rating, lower E_off (0.25 mJ), higher V_CE(sat) (2.1 V), same TO-247 package	Optimized for solar microinverters with tighter thermal constraints; requires stronger gate drive due to higher Q_g (240 nC)	Select when minimizing total switching loss dominates over conduction loss in high-duty-cycle operation

Compared with IXGN60N60C3 and IKW40N65ES5, DGTD65T40S1PT offers superior balance of V_CE(sat), E_off, and integrated diode-making it optimal for cost-sensitive, thermally constrained UPS and induction heating designs where layout simplicity and reliability are prioritized over marginal efficiency gains.

Availability

DGTD65T40S1PT is available at Aetrix Electronics and suitable for UPS inverters, solar string inverters, and induction heating cookers requiring stable component supply across multi-year production cycles.

Supply support for DGTD65T40S1PT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This device belongs to Diodes' high-voltage power transistor product line, engineered specifically for industrial power conversion systems demanding ruggedness, thermal stability, and RoHS-compliant packaging without performance compromise.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

A 7.9 Ω gate resistor is specified in the datasheet for switching characterization at 40 A and 400 V. Using >10 Ω increases td(off) and E_off nonlinearly; values below 5 Ω risk gate oscillation due to layout inductance. For 20 kHz operation, 6.8–8.2 Ω provides optimal trade-off between switching loss and EMI.

Does DGTD65T40S1PT require a negative gate voltage for turn-off?

No. The device is fully specified for 0 V to +15 V gate drive, with V_GE = 0 V sufficient for safe turn-off. Applying −5 V improves noise immunity in high-dv/dt environments but is not required for functional operation or short-circuit protection.

How does thermal resistance change when mounted on a 4-layer PCB versus JEDEC 2-layer FR-4?

R_θJA degrades from 40°C/W (JEDEC 2-layer) to ~32°C/W on a 4-layer board with 2 oz copper and internal thermal vias. However, R_θJC remains unchanged at 0.44°C/W-so heatsink interface quality dominates total thermal path in production assemblies.

Is the anti-parallel diode rated for continuous conduction mode (CCM) operation?

Yes. The diode is rated for I_F = 40 A at T_C = 25°C and I_Fpuls = 160 A, with VF = 1.30 V @ 20 A and T_vj = 25°C. Its t_rr and Q_rr are characterized for CCM use in bridge-leg freewheeling, supporting full-rated current in solar inverter H-bridge configurations.

DGTD65T40S1PT Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Field Stop

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 80 A

Current - Collector Pulsed (Icm):: 160 A

Vce(on) (Max) @ Vge, Ic:: 2.4V @ 15V, 40A

Power - Max:: 341 W

Switching Energy:: 1.15mJ (on), 350µJ (off)

Input Type:: Standard

Gate Charge:: 219 nC

Td (on/off) @ 25°C:: 58ns/245ns

Test Condition:: 400V, 40A, 7.9Ohm, 15V

Reverse Recovery Time (trr):: 145 ns

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247

DGTD65T40S1PT FAQ

1.How can I place an order for DGTD65T40S1PT through Aetrix?

Please submit a Request for Quotation (RFQ) for DGTD65T40S1PT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DGTD65T40S1PT reliable?

The price and inventory of DGTD65T40S1PT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DGTD65T40S1PT is usually 5 days.

3.What payment methods are accepted for DGTD65T40S1PT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DGTD65T40S1PT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DGTD65T40S1PT?

DGTD65T40S1PT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DGTD65T40S1PT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DGTD65T40S1PT?

For technical support, including DGTD65T40S1PT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DGTD65T40S1PT requirements.

6.How does Aetrix verify that DGTD65T40S1PT is sourced from the original manufacturer or authorized distributors?

All DGTD65T40S1PT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DGTD65T40S1PT meets industry standards.

7.What is the process for return or replacement of DGTD65T40S1PT?

All DGTD65T40S1PT units undergo pre-shipment inspection (PSI). If there is an issue with DGTD65T40S1PT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DGTD65T40S1PT part is unused and in its original packaging.

Return procedure for DGTD65T40S1PT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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