Infineon Technologies DHP0050N10N5AUMA1

Overview

DHP0050N10N5AUMA1 from Infineon is a 100 V symmetrical half-bridge PowerStage integrating OptiMOS™ 5 MOSFETs and level-shift gate drivers in a single PQFN-36 package. It delivers 4 A source / 5 A sink high-side and 4 A source / 6 A sink low-side drive capability, supports up to 1 MHz switching, and features independent HI/LI PWM control with -10 V to 20 V input tolerance - deployed in telecom bus converters and intermediate bus architecture DC/DC stages.

For engineers reviewing the DHP0050N10N5AUMA1 datasheet, DHP0050N10N5AUMA1 pinout, DHP0050N10N5AUMA1 application, or DHP0050N10N5AUMA1 equivalent, key selection criteria include UVLO thresholds (7.0 V VDD / 5.75 V VHB), <6 ns high-/low-side delay matching, integrated 120 V bootstrap diode, 8–17 V supply range, and PQFN-36 thermal performance for high-density power modules.

Technical Context

This device implements a fully integrated half-bridge topology with independently controlled high-side and low-side gate drivers, leveraging Infineon's OptiMOS™ 5 technology for low R_DS(on) and fast switching. The level-shift architecture enables robust high-side operation without external floating supplies, while internal GNDA/GNDB separation maintains signal integrity under fast dV/dt transients at the SW node.

Functional behavior follows a direct truth table: HI and LI inputs independently determine HO and LO outputs (L/L → L/L; H/L → H/L; L/H → L/H; H/H → H/H). Under-voltage lockout operates synchronously on both VDD and VHB rails, with 0.5 V and 0.25 V hysteresis respectively, preventing linear-mode conduction during brownout conditions.

Key Specifications

Pinout & Package

Delivered in a lead-free, RoHS-compliant PG-IQFN-36-1 package measuring 7.5 mm × 6.0 mm × 0.9 mm with exposed thermal pad. The package supports high-current routing via VIN (pins 24–28), SW (pins 12–21), and PGND (pins 10, 11, 22, 23, 33) planes, and integrates dual driver grounds (GNDA, GNDB) for noise-isolated control referencing.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar half-bridge power stage applications.

Compared with IRS2007MTRPBF and MP8017GQ-Z, DHP0050N10N5AUMA1 uniquely combines 20 A current capability, independent PWM control, integrated 120 V bootstrap diode, and <6 ns delay matching - making it optimal for high-density, high-efficiency 48 V telecom and industrial DC/DC modules.

Availability

DHP0050N10N5AUMA1 is available at Aetrix Electronics and suitable for telecom bus converters, intermediate bus architecture systems, and synchronous buck regulators requiring stable component supply, long-term lifecycle support, and qualified industrial-grade reliability.

Supply support for DHP0050N10N5AUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

DHP0050N10N5AUMA1 belongs to Infineon's OptiMOS™ PowerStage product line, engineered specifically for high-frequency, high-efficiency DC/DC conversion in space-constrained telecom and datacom infrastructure.

FAQ

What is the maximum continuous current rating for DHP0050N10N5AUMA1?

The device is rated for up to 20 A continuous current under typical thermal conditions: 2 oz copper PCB, 4 thermal vias under the exposed pad, ambient temperature ≤60 °C, and airflow ≥200 LFM. Derating applies above 60 °C ambient or with reduced copper area, per the datasheet's R_thJA = 30 °C/W specification.

Does DHP0050N10N5AUMA1 require an external bootstrap diode?

No. DHP0050N10N5AUMA1 integrates a 120 V rated bootstrap diode internally, eliminating the need for an external diode. A minimum 0.1 µF ceramic capacitor must be placed between HB (pin 36) and HS (pin 35), and the HS node must be connected to the switching node (SW pins 12–21) for proper bootstrap charging.

How does the independent HI/LI control differ from differential-input variants like DHP1050N10N5?

DHP0050N10N5AUMA1 uses two separate TTL inputs (HI and LI) that directly control HO and LO outputs per a truth table - enabling asymmetric duty cycles and custom dead-time insertion. In contrast, DHP1050N10N5 employs differential inputs with inherent shoot-through protection, where only one valid state (HI≠LI) produces active outputs, preventing simultaneous conduction by design.

What is the recommended minimum pulse width for reliable operation?

The minimum valid input pulse width is 40 ns for both HI and LI signals. Pulses shorter than this may be ignored or distorted due to internal transient detection and clock-gating logic. For stable switching at 1 MHz, ensure controller-generated pulses exceed 40 ns high/low time to maintain deterministic HO/LO output behavior.