onsemi FGA15N120ANDTU

Overview

FGA15N120AND from Fairchild Semiconductor is a 1200 V, 15 A NPT IGBT with integrated fast recovery diode in TO-3PN package, designed for high-efficiency switching in induction heating, UPS inverters, and motor drives. It delivers V_CE(sat) = 2.4 V @ I_C = 15 A, t_r = 70 ns, t_f = 60 ns, and trr = 210 ns (diode), enabling robust performance in hard-switched 600 V DC-link applications.

For engineers reviewing the FGA15N120AND datasheet, pinout, applications, or equivalent options, key selection criteria include its 1200 V blocking rating, low conduction loss at 15 A continuous, integrated FRD with 210 ns reverse recovery, thermal resistance R_θJC(IGBT) = 0.63 °C/W, and suitability for high-frequency inverter stages requiring stable SOA up to 125 °C case temperature.

Technical Context

The FGA15N120AND employs Non-Punch-Through (NPT) IGBT technology with co-packaged FRD, delivering balanced conduction and switching losses across industrial operating temperatures. Its gate threshold voltage (V_GE(th) = 3.5–7.5 V) and total gate charge (Q_g = 120–180 nC) support standard ±15 V gate drive while maintaining noise immunity and controllable dI/dt.

Thermal design is enabled by separate junction-to-case thermal resistances: 0.63 °C/W for the IGBT and 2.88 °C/W for the diode. The device operates over T_J = –55 to +150 °C and supports pulsed collector current up to 45 A, with SOA validated for inductive loads at V_CC = 600 V and T_C = 125 °C.

Key Specifications

Pinout & Package

Package: TO-3PN (isolated metal tab, 3-pin through-hole). Metal tab is electrically connected to collector (C); pin 1 = Gate (G), pin 2 = Collector (C), pin 3 = Emitter (E).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT + FRD applications.

Compared with STGP15H120DF and IXGN15N120B3, the FGA15N120AND offers the lowest thermal resistance in TO-3PN form factor and proven reliability in induction heating, making it optimal for space-constrained, thermally demanding 15 A inverter legs where mechanical ruggedness and legacy compatibility matter.

Availability

FGA15N120AND is available at Aetrix Electronics and suitable for induction heating systems, uninterruptible power supplies, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing from original manufacturer channels.

Supply support for FGA15N120AND includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Fairchild Semiconductor (now part of ON Semiconductor) is a pioneer in power semiconductor innovation, specializing in high-voltage IGBTs, MOSFETs, and analog ICs for industrial and consumer power systems.

The AND-series IGBTs-including FGA15N120AND-were engineered specifically for high-frequency, high-reliability inverter applications such as induction heating and UPS, emphasizing low-loss NPT architecture and integrated FRD co-packaging.

FAQ

What is the maximum continuous collector current rating for FGA15N120AND at 100 °C case temperature?

The FGA15N120AND is rated for 15 A continuous collector current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from its 24 A rating at 25 °C and defines the usable current envelope in real-world heatsink-mounted operation where case temperature exceeds ambient.

Does FGA15N120AND include an integrated diode, and what are its key recovery characteristics?

Yes, the FGA15N120AND integrates a fast recovery diode (FRD) in the same TO-3PN package. Its key diode parameters include trr = 210 ns (typ.) at I_F = 15 A and dI/dt = 200 A/µs, V_FM = 1.7 V (typ.) at I_F = 15 A and T_C = 25 °C, and Q_rr = 2835 nC (typ.), enabling efficient freewheeling with minimal recovery loss.

What gate drive voltage is recommended for reliable switching of FGA15N120AND?

A gate-emitter voltage of ±15 V is recommended for the FGA15N120AND: +15 V for turn-on to ensure full saturation and low V_CE(sat), and –15 V for turn-off to improve noise immunity and prevent spurious conduction. The gate threshold voltage range is 3.5–7.5 V, and total gate charge is 120–180 nC, requiring a driver capable of ≥±9 A peak current with 20 Ω series resistance.

Can FGA15N120AND be used in 600 V DC-link applications without external snubbers?

Yes, the FGA15N120AND's 1200 V V_CES rating provides 2× margin over a 600 V DC bus, and its SOA curves (Fig 15–16) validate safe operation under inductive switching at V_CC = 600 V and T_C = 125 °C. While snubbers may still be used for EMI control, they are not required for basic SOA compliance in properly laid-out PCBs with low stray inductance.

What is the thermal resistance from junction to case for the IGBT portion of FGA15N120AND?

The thermal resistance from junction to case for the IGBT portion of FGA15N120AND is 0.63 °C/W (maximum), as listed under Thermal Characteristics. This value applies when the metal tab is mounted to a heatsink with proper thermal interface material and torque, and enables accurate junction temperature estimation using T_J = T_C + P_D × R_θJC.