onsemi FGA15N120FTDTU

Overview

FGA15N120FTDTU from Fairchild Semiconductor is a 1200 V, 15 A field stop trench IGBT with integrated anti-parallel diode in TO-3PN package, optimized for soft-switching induction heating and microwave oven inverters. It delivers V_CE(sat) = 1.58 V @ 15 A/15 V, E_off = 0.58 mJ, and R_θJC(IGBT) = 0.57 °C/W.

For engineers reviewing the FGA15N120FTDTU datasheet, pinout, applications, or equivalent options, key selection criteria include avalanche ruggedness, parallel operation capability, thermal resistance under high-T_C conditions, and diode reverse recovery performance (t_rr = 575 ns @ 25°C).

Technical Context

This IGBT employs field stop trench technology to simultaneously reduce conduction loss and switching loss-enabling high-efficiency operation at 20–100 kHz in resonant topologies. Its gate threshold voltage (V_GE(th) = 3.5–7.5 V) and total gate charge (Q_g = 100 nC) support robust drive design with standard 15 V gate drivers.

The integrated fast-recovery diode features t_rr = 575 ns, Q_rr = 8.7 µC, and I_rr = 30 A @ 25°C, enabling low-loss freewheeling without external diode addition. Thermal design is anchored by separate R_θJC values: 0.57 °C/W for the IGBT die and 2.1 °C/W for the diode die.

Key Specifications

Pinout & Package

FGA15N120FTDTU uses the TO-3PN metal-can package with isolated collector tab, designed for high-voltage isolation and mechanical robustness in high-power consumer and industrial inverters. The case serves as the collector terminal, requiring insulated mounting hardware.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT applications.

Compared with STGP15H120DF and IXGH15N120B3, FGA15N120FTDTU offers the lowest combined conduction–switching loss profile and fastest integrated diode recovery-making it optimal for next-generation high-frequency induction and microwave inverter designs where thermal density and EMI are critical.

Availability

FGA15N120FTDTU is available at Aetrix Electronics and suitable for induction heating cooktops, microwave oven inverters, and industrial brazing systems requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.

Supply support for FGA15N120FTDTU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Fairchild Semiconductor was a U.S.-based semiconductor company specializing in power management, analog, and discrete devices before its acquisition by ON Semiconductor in 2016. Its IGBT portfolio emphasized high-voltage ruggedness and integration.

The FGA15N120FTDTU belongs to Fairchild's field stop trench IGBT family, engineered specifically for soft-switching resonant inverters in high-efficiency consumer and industrial heating applications.

FAQ

What is the maximum continuous collector current rating for FGA15N120FTDTU at 100°C case temperature?

The FGA15N120FTDTU is rated for 15 A continuous collector current at T_C = 100°C, as specified in its Absolute Maximum Ratings table. This rating reflects thermal derating due to reduced heat dissipation capability at elevated case temperatures and must be applied in thermal design calculations alongside R_θJC = 0.57 °C/W.

Does FGA15N120FTDTU include an integrated diode, and what are its key recovery parameters?

Yes, FGA15N120FTDTU integrates an anti-parallel diode with t_rr = 575 ns, Q_rr = 8.7 µC, and I_rr = 30 A at 25°C. These values are measured under standardized conditions (I_F = 15 A, dI/dt = 200 A/µs) and directly impact freewheeling loss and voltage spike magnitude in bridge configurations.

What gate drive voltage range is safe for FGA15N120FTDTU, and what is its gate threshold voltage?

FGA15N120FTDTU supports ±25 V gate-emitter voltage (V_GES) per Absolute Maximum Ratings. Its gate threshold voltage V_GE(th) ranges from 3.5 V to 7.5 V (typ. 6 V) at I_C = 15 mA, ensuring reliable turn-on with standard 15 V gate drivers while avoiding unintended conduction near 0 V.

How does the thermal resistance of FGA15N120FTDTU compare between the IGBT and diode dies?

FGA15N120FTDTU specifies separate thermal resistances: R_θJC(IGBT) = 0.57 °C/W and R_θJC(Diode) = 2.1 °C/W. This asymmetry reflects different die geometries and thermal paths-critical for accurate junction temperature estimation when both devices conduct simultaneously in half-bridge operation.

Is FGA15N120FTDTU suitable for parallel operation, and what design considerations apply?

Yes, FGA15N120FTDTU is designed for parallel operation with exceptional avalanche ruggedness, as stated in its General Description. Successful paralleling requires matched gate drive impedance, symmetrical PCB layout, and thermal coupling-especially given its positive V_CE(sat) temperature coefficient which promotes current sharing.