onsemi FGA20N120FTDTU

Overview

FGA20N120FTDTU from ON Semiconductor is a 1200 V, 20 A field stop trench IGBT with integrated anti-parallel diode, designed for high-voltage soft-switching power conversion. It delivers V_CE(sat) = 1.59 V @ 20 A/15 V_GE, t_f = 217 ns (25°C), and E_off = 0.71 mJ in 600 V resistive switching - enabling efficient induction heating and microwave oven inverters.

For engineers reviewing the FGA20N120FTDTU datasheet, pinout, applications, or equivalent options, key selection criteria include avalanche ruggedness, thermal resistance R_θJC(IGBT) = 0.42 °C/W, gate charge Q_g = 137 nC, and TO-3P package compatibility with high-power heatsink mounting.

Technical Context

This IGBT employs field stop trench architecture to simultaneously reduce conduction loss and switching loss - achieving low V_CE(sat) while maintaining fast turn-off (t_d(off) = 143 ns) and controlled di/dt. Its monolithic integration of a fast recovery diode (t_rr = 447 ns, Q_rr = 10.8 µC at 25°C) supports bidirectional energy handling in resonant topologies.

The device operates across -55°C to +150°C junction temperature, with rated continuous collector current of 20 A at T_C = 100°C and pulsed capability up to 60 A. Its ±25 V gate voltage rating and high input impedance simplify gate driver design while supporting robust noise immunity in EMI-prone industrial environments.

Key Specifications

Pinout & Package

FGA20N120FTDTU is housed in a TO-3P (EIAJ SC-65) plastic package with isolated metal tab, optimized for high-voltage isolation and mechanical robustness in industrial power modules. The package features three terminals: Collector (C), Gate (G), and Emitter (E), with the metal tab electrically connected to the collector.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT applications.

Compared with STGP20NC120HD and IXGN20N120B3, FGA20N120FTDTU offers the lowest V_CE(sat) and best thermal resistance in TO-3P form factor, making it optimal for space-constrained, high-efficiency induction heating and microwave oven designs where integrated diode functionality and thermal performance are prioritized.

Availability

FGA20N120FTDTU is available at Aetrix Electronics and suitable for induction heating systems, microwave oven inverters, and industrial UPS inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing for production ramp-up.

Supply support for FGA20N120FTDTU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor (formerly Fairchild Semiconductor) is a global leader in intelligent power and sensor solutions, serving automotive, industrial, cloud computing, and consumer markets with energy-efficient semiconductor technologies.

The FGA20N120FTDTU belongs to ON Semiconductor's Field Stop Trench IGBT product line, engineered specifically for high-voltage resonant and soft-switching applications demanding low conduction loss, fast switching, and robust avalanche capability.

FAQ

What is the maximum junction temperature rating for FGA20N120FTDTU?

The FGA20N120FTDTU has an operating junction temperature range of -55°C to +150°C. This wide range supports reliable operation in harsh industrial environments such as induction heating enclosures and microwave oven cavities where ambient temperatures may exceed 85°C. Thermal design must ensure T_J does not exceed 150°C under worst-case load and cooling conditions.

Does FGA20N120FTDTU include an integrated diode, and what are its key parameters?

Yes, FGA20N120FTDTU integrates a fast recovery anti-parallel diode rated for 20 A continuous forward current at T_C = 25°C. Key diode parameters include V_FM = 1.3 V @ 20 A/25°C, t_rr = 447 ns, Q_rr = 10.8 µC, and I_RR = 48 A - enabling efficient freewheeling in resonant topologies without external diode components.

What gate resistor value is recommended for FGA20N120FTDTU in a 600 V, 20 A switching application?

A 10 Ω gate resistor is specified in the FGA20N120FTDTU datasheet for characterization at 600 V/20 A, yielding t_d(on) = 30 ns and t_f = 217 ns at 25°C. For EMI-sensitive designs, increasing R_G to 15–22 Ω reduces di/dt and voltage overshoot but increases switching loss; thermal validation is required for each R_G selection.

Is FGA20N120FTDTU pin-compatible with other TO-3P IGBTs like FGA25N120ANTD?

No, FGA20N120FTDTU is not pin-compatible with FGA25N120ANTD - although both use TO-3P packages, their internal die structures, gate thresholds, and safe operating area boundaries differ significantly. Substitution requires verification of V_GE(th), SOA curves, and gate drive timing margins; PCB layout changes may be necessary.

How does the field stop trench technology in FGA20N120FTDTU improve performance over planar IGBTs?

Field stop trench technology in FGA20N120FTDTU reduces drift region thickness while maintaining 1200 V blocking capability, lowering V_CE(sat) by ~15% and cutting switching losses by up to 25% versus equivalent planar IGBTs. This enables higher efficiency and smaller heatsinks in 20–50 kHz induction heating and microwave inverter applications.