onsemi FGA25N120FTD

Overview

FGA25N120FTD from Fairchild Semiconductor is a 1200 V, 25 A field stop trench IGBT with integrated anti-parallel diode, designed for high-efficiency soft-switching in resonant induction heating and microwave oven power stages. It delivers V_CE(sat) = 1.6 V @ I_C = 25 A, t_d(off) = 210 ns, and E_off = 0.90 mJ at 25°C, enabling compact, thermally robust 1–3 kW consumer appliance inverters.

For engineers reviewing the FGA25N120FTD datasheet, pinout, applications, or equivalent options, key selection criteria include its 1200 V blocking rating, 25 A continuous collector current at T_C = 100°C, R_θJC(IGBT) = 0.4°C/W, avalanche ruggedness for parallel operation, and TO-3PN package compatibility with standard heatsink mounting.

Technical Context

This IGBT employs field stop trench technology to simultaneously minimize conduction loss (V_CE(sat) = 1.6 V) and switching loss (E_ts = 1.24 mJ), supporting high-frequency soft-switching topologies up to 100 kHz. Its gate threshold voltage (V_GE(th) = 3.5–7.5 V) and total gate charge (Q_g = 160 nC) are optimized for standard 15 V gate drivers with moderate RG control.

The integrated fast-recovery diode features t_rr = 770 ns and Q_rr = 18 µC at 25°C, reducing commutation losses and minimizing voltage overshoot during hard-commutated transitions. Thermal resistance R_θJC(Diode) = 1.42°C/W enables co-packaged thermal management with the IGBT die under shared heatsink conditions.

Key Specifications

Pinout & Package

FGA25N120FTD is housed in a TO-3PN (TO-247-3L) package with isolated metal tab, compatible with industry-standard mounting hardware and thermal interface materials. The case serves as the collector terminal, enabling low-inductance, high-current connections to heatsinks and DC bus planes.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT applications.

Compared with STGP20NC120FD and IXGN50N120B3, the FGA25N120FTD offers optimal balance of 25 A current handling, 1.6 V V_CE(sat), and 0.4°C/W thermal resistance in TO-3PN-making it ideal for cost-sensitive, space-constrained 1–3 kW consumer-grade inverters where thermal efficiency and layout simplicity are critical.

Availability

FGA25N120FTD is available at Aetrix Electronics and suitable for induction cooktops, microwave ovens, commercial induction heaters, and industrial RF generators requiring stable component supply across multi-year production cycles.

Supply support for FGA25N120FTD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Fairchild Semiconductor (now part of ON Semiconductor) was a pioneer in power semiconductor innovation, known for PowerTrench® and SuperFET® technologies before its 2016 acquisition.

The FGA25N120FTD belongs to Fairchild's field stop trench IGBT product line, engineered specifically for high-efficiency, high-reliability resonant switching in consumer and light industrial heating applications.

FAQ

What is the maximum continuous collector current rating for FGA25N120FTD at elevated temperature?

The FGA25N120FTD supports I_C = 25 A continuous collector current at case temperature T_C = 100°C, as specified in its Absolute Maximum Ratings table. This rating assumes proper heatsinking to maintain junction temperature below 150°C and accounts for thermal derating above 25°C ambient. At T_C = 25°C, the device is rated for 50 A continuous operation.

Does FGA25N120FTD include an integrated diode, and what are its key recovery parameters?

Yes, the FGA25N120FTD integrates a fast-recovery anti-parallel diode. At T_C = 25°C, its key recovery parameters are t_rr = 770 ns, Q_rr = 18 µC, and I_rr = 48 A, measured under I_ES = 25 A and dI_ES/dt = 200 A/µs. These values ensure low commutation loss and minimal voltage overshoot in resonant inverter applications.

What gate drive voltage is required to fully enhance FGA25N120FTD, and what is its threshold range?

The FGA25N120FTD has a gate-emitter threshold voltage V_GE(th) ranging from 3.5 V to 7.5 V (min to max) at I_C = 25 mA. For full enhancement and guaranteed low V_CE(sat), a nominal gate drive of +15 V is recommended. The device tolerates ±25 V gate-emitter voltage, but sustained operation above +20 V is not advised due to increased gate oxide stress.

Can FGA25N120FTD be used in parallel configurations, and what design features support this?

Yes, the FGA25N120FTD is explicitly designed for parallel operation. Its positive temperature coefficient of V_CE(sat) ensures inherent current sharing, and its exceptional avalanche ruggedness allows safe handling of unclamped inductive switching events during transient imbalances. No external emitter resistors are required for stable multi-device operation in induction heating inverters.

What is the thermal resistance from junction to case for the IGBT portion of FGA25N120FTD?

The thermal resistance from junction to case for the IGBT die in FGA25N120FTD is R_θJC(IGBT) = 0.4°C/W (maximum), as stated in the Thermal Characteristics section. This value enables effective heat transfer to standard aluminum heatsinks and supports power dissipation up to 313 W at T_C = 25°C, making it suitable for compact, fanless consumer appliance designs.