onsemi FGH40N120ANTU

Overview

FGH40N120ANTU from onsemi is a 1200 V, 40 A NPT (Non-Punch-Through) IGBT in TO-247-3LD package, optimized for high-efficiency switching in high-voltage inverters. It delivers V_CE(sat) = 2.6 V @ I_C = 40 A, 10 µs short-circuit withstand time at 600 V, and R_JC = 0.3 °C/W - enabling robust thermal management in induction heating and UPS systems.

For engineers reviewing the FGH40N120ANTU datasheet, pinout, applications, or equivalent options, key selection criteria include its 1200 V blocking capability, low conduction loss at 40 A continuous current, gate charge of 220 nC, and validated operation up to T_J = +150 °C in hard-switched industrial inverters.

Technical Context

This IGBT employs Non-Punch-Through (NPT) silicon technology to balance low V_CE(sat) and fast switching with inherent ruggedness. Its 10 µs short-circuit withstand time at V_CE = 600 V and V_GE = 15 V supports reliable fault handling without external desaturation protection in motor drives.

The device features a gate threshold voltage (V_GE(th)) of 3.5–7.5 V and total gate charge (Q_g) of 220 nC, enabling direct drive from standard 15 V gate drivers while maintaining controlled dV/dt and EMI performance in 600 V bus applications.

Key Specifications

Pinout & Package

Package: TO-247-3LD (Case 340CK), isolated flange, short-lead variant with collector-connected metal tab for direct heatsink mounting and low-inductance power path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Compared with IXGN40N120B3 and IKW40N120H3, the FGH40N120ANTU offers superior short-circuit ruggedness (10 µs) and lower gate charge than the Infineon part, while maintaining lower V_CE(sat) than the IXYS device - making it optimal for industrial inverters requiring both reliability and efficiency at 8–16 kHz.

Availability

FGH40N120ANTU is available at Aetrix Electronics and suitable for induction heating inverters, uninterruptible power supplies (UPS), and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for FGH40N120ANTU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient electronics for automotive, industrial, cloud, and IoT applications.

The AN-series IGBTs, including FGH40N120ANTU, were designed specifically for high-voltage, medium-power industrial inverters where ruggedness, thermal stability, and predictable switching behavior are critical.

FAQ

What is the maximum continuous collector current rating for FGH40N120ANTU at 100°C case temperature?

The FGH40N120ANTU is rated for 40 A continuous collector current at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This value reflects thermal equilibrium under forced-air cooling with appropriate heatsinking and accounts for derating above 25°C ambient. The FGH40N120ANTU achieves this rating using its 0.3 °C/W R_JC and NPT die architecture to maintain junction temperature below 150°C.

Does FGH40N120ANTU have a Kelvin emitter pin for gate control?

No, the FGH40N120ANTU uses a standard 3-pin TO-247-3LD configuration without a dedicated Kelvin emitter. Pin 3 serves as the main emitter terminal for both power return and gate drive reference. Layout best practices require minimizing loop inductance between gate driver ground and this emitter pin to prevent oscillation and false triggering during high di/dt switching.

What is the short-circuit withstand time specification for FGH40N120ANTU, and under what test conditions?

The FGH40N120ANTU has a short-circuit withstand time (SCWT) of 10 µs when tested at V_CE = 600 V, V_GE = 15 V, and T_C = 125°C. This parameter is measured under single-pulse conditions and defines the maximum safe duration the device can sustain short-circuit current before thermal failure. System-level protection must detect and clear faults within this window to ensure reliability of the FGH40N120ANTU.

Can FGH40N120ANTU be used in parallel configurations for higher current capacity?

Yes, the FGH40N120ANTU supports paralleling due to its positive V_CE(sat) temperature coefficient above 100°C, which promotes current sharing. Successful implementation requires matched gate drive impedance, symmetrical PCB layout, and individual gate resistors. Thermal coupling between devices must also be minimized to avoid thermal runaway - verified in application notes AN-1207 and AN-1211 for the AN-series IGBTs.

Is FGH40N120ANTU compatible with standard ±15 V gate drivers?

Yes, the FGH40N120ANTU is fully compatible with industry-standard ±15 V gate drivers. Its gate threshold voltage (V_GE(th)) ranges from 3.5 V to 7.5 V, and maximum gate-emitter voltage is ±25 V. A 15 V turn-on and −8 V to −15 V turn-off bias ensures robust noise immunity and fast switching while staying within absolute maximum ratings. The FGH40N120ANTU's 220 nC total gate charge determines required driver peak current for target switching speeds.