onsemi FGH40N60UFTU

Overview

FGH40N60UFTU from onsemi is a field-stop IGBT rated for 600 V collector-emitter voltage, 40 A continuous collector current at 100°C case temperature, and 1.8 V typical saturation voltage at 40 A/15 V gate drive - optimized for high-efficiency switching in solar inverters, UPS systems, and PFC stages.

For engineers reviewing the FGH40N60UFTU datasheet, pinout, applications, or equivalent options, key selection criteria include its 0.43 °C/W junction-to-case thermal resistance, 120 nC total gate charge, 1.65 mJ total switching loss at 25°C, and TO-247-3LD package suitability for high-power industrial converters requiring robust thermal management and low conduction loss.

Technical Context

This IGBT employs field-stop technology to achieve balanced conduction and switching losses, with a 600 V breakdown voltage (BVCES) and positive temperature coefficient of breakdown voltage (0.6 V/°C), enabling stable parallel operation. Its gate threshold voltage (4.0–6.5 V) and 15 V recommended gate drive ensure reliable turn-on while minimizing shoot-through risk in bridge configurations.

Dynamic performance is characterized by 24 ns turn-on delay, 112 ns turn-off delay, and 44 ns/30 ns rise/fall times under 400 V, 40 A inductive load conditions. At 125°C junction temperature, Eoff increases from 0.46 mJ to 0.69 mJ - a critical design consideration for thermally constrained PFC and inverter designs.

Key Specifications

Pinout & Package

FGH40N60UFTU is housed in a TO-247-3LD (Case 340CK) package with short leads, featuring isolated collector flange for direct thermal mounting and standard three-terminal layout.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT applications.

Compared with STGP40H60DF and IXGN40N60A3, the FGH40N60UFTU delivers superior thermal resistance margin (0.43 vs. 0.45/0.40 °C/W) and balanced loss profile across 4–20 kHz - making it especially suitable for solar inverters requiring long-term reliability at elevated ambient temperatures.

Availability

FGH40N60UFTU is available at Aetrix Electronics and suitable for solar inverter DC-AC conversion, UPS inverter output stages, and industrial PFC boost converters requiring stable component supply, traceable sourcing, and lifecycle continuity.

Supply support for FGH40N60UFTU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and IoT markets.

The FGH40N60UFTU belongs to onsemi's Field Stop IGBT product line, engineered specifically for high-efficiency, high-reliability power conversion in renewable energy and uninterruptible power systems.

FAQ

What is the maximum continuous collector current rating for FGH40N60UFTU at 100°C case temperature?

The FGH40N60UFTU is rated for 40 A continuous collector current at TC = 100°C, as specified in the Absolute Maximum Ratings table. This value reflects derating from the 80 A rating at 25°C and is validated for sustained operation in thermally demanding applications such as solar inverters and UPS systems where heatsink temperature reaches 100°C.

Does FGH40N60UFTU require negative gate voltage for reliable turn-off?

No, the FGH40N60UFTU does not require negative gate voltage for reliable turn-off. Its gate threshold voltage range (4.0–6.5 V) and robust gate oxide allow stable operation with 0 V gate-emitter voltage during off-state. However, applying −5 V to −10 V improves noise immunity and reduces Miller-induced turn-on risk in high-dV/dt environments like multi-level inverters.

What is the thermal resistance from junction to case (RJC) for FGH40N60UFTU, and how does it impact heatsink design?

The FGH40N60UFTU has a maximum RJC(IGBT) of 0.43 °C/W, measured from junction to the collector flange. This low value enables efficient heat transfer to external heatsinks, allowing designers to size heatsinks based on actual power dissipation (e.g., ~1.5 W conduction loss + ~1.65 mJ × switching frequency) without excessive thermal margin - critical for compact solar inverter enclosures.

Can FGH40N60UFTU be used in parallel configurations, and what design considerations apply?

Yes, the FGH40N60UFTU supports parallel operation due to its positive temperature coefficient of breakdown voltage (0.6 V/°C) and matched VCE(sat) characteristics across production lots. Successful paralleling requires matched gate drive impedance, symmetrical PCB layout, and individual emitter resistors for current balancing - especially important in high-current UPS inverter legs.

What is the total gate charge (Qg) of FGH40N60UFTU, and how does it affect gate driver selection?

The FGH40N60UFTU has a total gate charge (Qg) of 120 nC at VCE = 400 V, IC = 40 A, and VGE = 15 V. This value directly determines peak gate current demand: for a 100 ns turn-on time, a driver must supply ≥1.2 A peak. Gate drivers such as the UCC21520 or ISO5852S are commonly selected to deliver this current while maintaining tight timing control and isolation.