onsemi FGH60N60SFTU

Overview

FGH60N60SFTU from onsemi is a 600 V, 60 A field-stop IGBT in TO-247-3LD package, optimized for high-efficiency switching in solar inverters, UPS systems, and PFC stages. It delivers low V_CE(sat) of 2.3 V (typ.) at 60 A and 15 V_GE, fast switching with 22 ns turn-on delay and 134 ns turn-off delay, and robust thermal resistance of 0.33 °C/W (junction-to-case).

For engineers reviewing the FGH60N60SFTU datasheet, pinout, applications, or equivalent options, key selection criteria include its 600 V blocking capability, 198 nC total gate charge, 2.46 mJ total switching loss at 25°C, and suitability for hard-switched industrial power conversion where conduction and switching loss trade-offs are critical.

Technical Context

This IGBT employs field-stop technology to achieve balanced conduction and switching losses. Its gate threshold voltage (V_GE(th)) ranges from 4.0 V to 6.5 V, enabling reliable turn-on control under varying temperature conditions, while its ±20 V gate-emitter rating supports standard 15 V drive circuits with margin.

The device features a monolithic structure with integrated anti-parallel diode not present - it is a three-terminal IGBT only. Thermal performance is defined by R_JC = 0.33 °C/W and R_JA = 40 °C/W, confirming its dependence on heatsink mounting for sustained 60 A operation at 100°C case temperature.

Key Specifications

Pinout & Package

FGH60N60SFTU is housed in a TO-247-3LD (Case 340CK) package with short leads, featuring isolated flange (collector-connected), and standardized 3-pin layout for high-power mounting and thermal management.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Compared with IXGN60N60A3 and IKW40N60H3, the FGH60N60SFTU offers balanced 60 A current handling, moderate 2.3 V V_CE(sat), and predictable 2.46 mJ E_ts, making it ideal for cost-sensitive industrial inverters where thermal margin and gate drive simplicity are prioritized over extreme efficiency tuning.

Availability

FGH60N60SFTU is available at Aetrix Electronics and suitable for solar inverter power stages, UPS inverter output stages, and PFC boost converters requiring stable component supply, long-term industrial lifecycle support, and traceable sourcing.

Supply support for FGH60N60SFTU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and IoT applications.

The FGH60N60SFTU belongs to onsemi's Field Stop IGBT product line, engineered specifically for high-efficiency, medium-frequency (10–20 kHz) industrial power conversion where reliability, thermal robustness, and balanced loss profiles are essential.

FAQ

What is the maximum continuous collector current rating for FGH60N60SFTU at 100°C case temperature?

The FGH60N60SFTU has a maximum continuous collector current (I_C) rating of 60 A at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This value reflects thermal limits under steady-state conduction and requires proper heatsinking to maintain junction temperature below 150°C. Derating is necessary above 100°C case temperature.

Does FGH60N60SFTU include an integrated anti-parallel diode?

No, the FGH60N60SFTU is a three-terminal IGBT without an integrated freewheeling diode. External diodes - such as ultrafast or SiC Schottky types - must be used in complementary configurations like half-bridges or inverter legs. The device datasheet confirms no diode parameters are specified, and pinout shows only Collector, Gate, and Emitter terminals.

What is the typical total gate charge (Q_g) of FGH60N60SFTU and how does it impact gate driver selection?

The FGH60N60SFTU has a typical total gate charge (Q_g) of 198 nC at V_CE = 400 V and I_C = 60 A. This value dictates minimum peak gate current: for a 100 ns rise time, ≥2 A driver capability is recommended. Gate resistor selection must balance switching speed against overshoot and EMI, especially given its 140 pF reverse transfer capacitance.

Can FGH60N60SFTU be used in short-circuit conditions, and what is its safe operating area (SOA) limit?

Yes, the FGH60N60SFTU is rated for short-circuit withstand per its SOA curve: up to 120 A at 300 V for 10 μs at T_C = 25°C. Operation beyond this boundary risks thermal runaway. For reliable protection, active desaturation detection and sub-μs shutdown (<5 μs) are required - the FGH60N60SFTU itself does not include built-in short-circuit protection logic.

What is the thermal resistance from junction to case (R_JC) for FGH60N60SFTU, and why is it critical for thermal design?

The FGH60N60SFTU has a maximum junction-to-case thermal resistance (R_JC) of 0.33 °C/W. This parameter is critical because it defines the minimum thermal path conductance needed between the die and heatsink. With 378 W max power dissipation at T_C = 25°C, even modest interface resistance (>0.1 °C/W) can push junction temperature beyond 150°C - making low-resistance thermal interface material and flat mounting surface essential for FGH60N60SFTU reliability.